1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT8JTF12864HZ – 1GB MT8JTF25664HZ – 2GB MT8JTF51264HZ – 4GB Features Figure 1: 204-Pin SODIMM (MO-268 R/C B) • DDR3 functionality and operations supported as defined in the component data sheet • 204-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512 Meg x 64) • VDD = 1.5V ±0.075V • VDDSPD = 3.0–3.6V • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Single-rank • Serial presence-detect (SPD) EEPROM • 8 internal device banks • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) • Selectable BC4 or BL8 on-the-fly (OTF) • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Module height: 30mm (1.181in) Options Marking • Operating temperature – Commercial (0°C ≤ T A ≤ +70°C) • Package – 204-pin DIMM (halogen-free) • Frequency/CAS latency – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.87ns @ CL = 7 (DDR3-1066) None Z -1G6 -1G4 -1G1 Table 1: Key Timing Parameters Data Rate (MT/s) Speed Grade Industry Nomenclature -1G6 PC3-12800 1600 -1G4 PC3-10600 -1G1 PC3-8500 -1G0 -80B tRP tRC CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) 1333 1333 1066 1066 800 667 13.125 13.125 48.125 – 1333 1333 1066 1066 800 667 13.125 13.125 49.125 – – – 1066 1066 800 667 13.125 13.125 50.625 PC3-8500 – – – 1066 – 800 667 15 15 52.5 PC3-6400 – – – – – 800 667 15 15 52.5 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN CL = 11 CL = 10 tRCD Products and specifications discussed herein are subject to change by Micron without notice. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB 8K 8K 8K 16K A[13:0] 32K A[14:0] 64K A[15:0] Device bank address 8 BA[2:0] 8 BA[2:0] 8 BA[2:0] Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) 1K A[9:0] 1K A[9:0] 1K A[9:0] 1 S0# 1 S0# 1 S0# Refresh count Row address Column address Module rank address Table 3: Part Numbers and Timing Parameters – 1GB Modules Base device: MT41J128M8,1 1Gb DDR3 SDRAM Module Part Number2 Density Configuration Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) 1.25ns/1600 MT/s 11-11-11 MT8JTF12864HZ-1G6__ 1GB 128 Meg x 64 12.8 GB/s MT8JTF12864HZ-1G4__ 1GB 128 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF12864HZ-1G1__ 1GB 128 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 4: Part Numbers and Timing Parameters – 2GB Modules Base device: MT41J256M8,1 2Gb DDR3 SDRAM Module Part Number2 Density Configuration MT8JTF25664HZ-1G6__ 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8JTF25664HZ-1G4__ 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF25664HZ-1G1__ 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Module Bandwidth Memory Clock/ Data Rate Clock Cycles (CL-tRCD-tRP) Table 5: Part Numbers and Timing Parameters – 4GB Modules Base device: MT41J512M8,1 4Gb DDR3 SDRAM Module Part Number2 Density Configuration MT8JTF51264HZ-1G6__ 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT8JTF51264HZ-1G4__ 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT8JTF51264HZ-1G1__ 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8JTF51264HZ-1G6E1. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Pin Assignments Pin Assignments Table 6: Pin Assignments 204-Pin DDR3 SODIMM Front 204-Pin DDR3 SODIMM Back Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol 1 VREFDQ 53 DQ19 105 VDD 157 DQ42 2 VSS 54 VSS 106 VDD 158 DQ46 3 VSS 55 VSS 107 A10 159 DQ43 4 DQ4 56 DQ28 108 BA1 160 DQ47 5 DQ0 57 DQ24 109 BA0 161 VSS 6 DQ5 58 DQ29 110 RAS# 162 VSS 7 DQ1 59 DQ25 111 VDD 163 DQ48 8 VSS 60 VSS 112 VDD 164 DQ52 9 VSS 61 VSS 113 WE# 165 DQ49 10 DQS0# 62 DQ3# 114 S0# 166 DQ53 11 DM0 63 DM3 115 CAS# 167 VSS 12 DQS0 64 DQ3 116 ODT0 168 VSS 13 VSS 65 VSS 117 VDD 169 DQS6# 14 VSS 66 VSS 118 VDD 170 DM6 15 DQ2 67 DQ26 119 A13 171 DQS6 16 DQ6 68 DQ30 120 NC 172 VSS 17 DQ3 69 DQ27 121 NC 173 VSS 18 DQ7 70 DQ31 122 NC 174 DQ54 19 VSS 71 VSS 123 VDD 175 DQ50 20 VSS 72 VSS 124 VDD 176 DQ55 21 DQ8 73 CKE0 125 NC 177 DQ51 22 DQ12 74 NC 126 VREFCA 178 VSS 23 DQ9 75 VDD 127 VSS 179 VSS 24 DQ13 76 VDD 128 VSS 180 DQ60 25 VSS 77 NC 129 DQ32 181 DQ56 26 VSS 78 A15 130 DQ36 182 DQ61 27 DQS1# 79 BA2 131 DQ33 183 DQ57 28 DM1 80 A14 132 DQ37 184 VSS 29 DQS1 81 VDD 133 VSS 185 VSS 30 RESET# 82 VDD 134 VSS 186 DQS7# 31 VSS 83 A12 135 DQS4# 187 DM7 32 VSS 84 A11 136 DM4 188 DQS7 33 DQ10 85 A9 137 DQS4 189 VSS 34 DQ14 86 A7 138 VSS 190 VSS 35 DQ11 87 VDD 139 VSS 191 DQ58 36 DQ15 88 VDD 140 DQ38 192 DQ62 37 VSS 89 A8 141 DQ34 193 DQ59 38 VSS 90 A6 142 DQ39 194 DQ63 39 DQ16 91 A5 143 DQ35 195 VSS 40 DQ20 92 A4 144 VSS 196 VSS 41 DQ17 93 VDD 145 VSS 197 SA0 42 DQ21 94 VDD 146 DQ44 198 NF 43 VSS 95 A3 147 DQ40 199 VDDSPD 44 VSS 96 A2 148 DQ45 200 SDA 45 DQS2# 97 A1 149 DQ41 201 SA1 46 DM2 98 A0 150 VSS 202 SCL 47 DQS2 99 VDD 151 VSS 203 VTT 48 VSS 100 VDD 152 DQS5# 204 VTT 49 VSS 101 CK0 153 DM5 – – 50 DQ22 102 CK1 154 DQS5 – – 51 DQ18 103 CK0# 155 VSS – – 52 DQ23 104 CK1# 156 VSS – – PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Pin Descriptions Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR3 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Description Ax Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. See the Pin Assignments Table for density-specific addressing information. BAx Input Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or PRECHARGE command is being applied. BA define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. CKx, CKx# Input Clock: Differential clock inputs. All control, command, and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. CKEx Input Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. DMx Input Data mask (x8 devices only): DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH, along with that input data, during a write access. Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins. ODTx Input On-die termination: Enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command. Par_In Input Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. RESET# Input (LVCMOS) Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as though a normal power-up was executed. Sx# Input Chip select: Enables (registered LOW) and disables (registered HIGH) the command decoder. SAx Input Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address range on the I2C bus. SCL Input Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communication to and from the temperature sensor/SPD EEPROM on the I2C bus. CBx I/O Check bits: Used for system error detection and correction. DQx I/O Data input/output: Bidirectional data bus. DQSx, DQSx# I/O Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; input with write data; center-aligned with write data. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Pin Descriptions Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O Description Serial data: Used to transfer addresses and data into and out of the temperature sensor/SPD EEPROM on the I2C bus. TDQSx, TDQSx# Output Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD MODE command to the extended mode register (EMR). When TDQS is enabled, DM is disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no function. Err_Out# Output Parity error output: Parity error found on the command and address bus. (open drain) EVENT# Output Temperature event:The EVENT# pin is asserted by the temperature sensor when criti(open drain) cal temperature thresholds have been exceeded. VDD Supply Power supply: 1.5V ±0.075V. The component VDD and VDDQ are connected to the module VDD. VDDSPD Supply Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. VREFCA Supply Reference voltage: Control, command, and address VDD/2. VREFDQ Supply Reference voltage: DQ, DM VDD/2. VSS Supply Ground. VTT Supply Termination voltage: Used for control, command, and address VDD/2. NC – No connect: These pins are not connected on the module. NF – No function: These pins are connected within the module, but provide no functionality. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM DQ Map DQ Map Table 8: Component-to-Module DQ Map Component Reference Number Component DQ U1 U3 U6 U8 Module DQ Module Pin Number Component Reference Number Component DQ Module DQ Module Pin Number 0 2 15 U2 0 22 50 1 1 7 1 17 41 2 6 16 2 18 51 3 5 6 3 21 42 4 7 18 4 23 52 5 0 5 5 16 39 6 3 17 6 19 53 7 4 4 7 20 40 0 34 141 0 50 175 1 36 130 1 53 166 2 38 140 2 54 174 3 33 131 3 49 165 4 35 143 4 55 176 5 32 129 5 48 163 6 39 142 6 51 177 7 37 132 7 52 164 0 61 182 0 45 148 1 62 192 1 42 157 2 57 183 2 44 146 3 58 191 3 46 158 4 60 180 4 40 147 5 59 193 5 47 160 6 56 181 6 41 149 7 63 194 7 43 159 0 29 58 0 9 23 1 26 67 1 10 33 2 25 59 2 13 24 3 31 70 3 11 35 4 24 57 4 12 22 5 30 68 5 15 36 6 28 56 6 8 21 7 27 69 7 14 34 PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN U4 U7 U9 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Functional Block Diagram Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQS2# DQS2 DM2 DQS3# DQS3 DM3 SCL DQS4# DQS4 DM4 VSS DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VSS DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ DM CS# DQS DQS# U1 DM CS# DQS DQS# DQS5# DQS5 DM5 DM CS# DQS DQS# DQS6# DQS6 DM6 U8 VSS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 U2 DM CS# DQS DQS# VSS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 U9 Note: PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS7# DQS7 DM7 VSS DQ DQ DQ DQ DQ DQ DQ DQ ZQ DQ DQ DQ DQ DQ DQ DQ DQ ZQ VSS WP A0 BA[2:0] A[15/14/13:0] RAS# CAS# WE# CKE0 ODT0 RESET# U3 A1 SDA A2 VSS SA0 SA1 VSS DM CS# DQS DQS# BA[2:0]: DDR3 SDRAM A[15/14/13:0]: DDR3 SDRAM RAS#: DDR3 SDRAM CAS#: DDR3 SDRAM WE#: DDR3 SDRAM CKE0: DDR3 SDRAM ODT0: DDR3 SDRAM RESET#: DDR3 SDRAM DM CS# DQS DQS# CK0 CK0# U7 DDR3 SDRAM x 8 CK1 CK1# Clock, control, command, and address line terminations: DQ DQ DQ DQ DQ DQ DQ DQ ZQ DM CS# DQS DQS# CKE0, A[15/14/13:0], RAS#, CAS#, WE#, S0#, ODT0, BA[2:0] U4 DQ DQ DQ DQ DQ DQ DQ DQ ZQ DDR3 SDRAM VTT DDR3 SDRAM CK CK# VDDSPD DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 U5 SPD EEPROM DM CS# DQS DQS# V DD VTT U6 VREFCA VDD SPD EEPROM DDR3 SDRAM Control, command, and address termination DDR3 SDRAM VREFDQ DDR3 SDRAM VSS DDR3 SDRAM 1. The ZQ ball on each DDR3 component is connected to an external 240Ω ±1% resistor that is tied to ground. It is used for the calibration of the component’s ODT and output driver. 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM General Description General Description DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM modules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals. Fly-By Topology DDR3 modules use faster clock speeds than earlier DDR technologies, making signal quality more important than ever. For improved signal quality, the clock, control, command, and address buses have been routed in a fly-by topology, where each clock, control, command, and address pin on each DRAM is connected to a single trace and terminated (rather than a tree structure, where the termination is off the module near the connector). Inherent to fly-by topology, the timing skew between the clock and DQS signals can be easily accounted for by using the write-leveling feature of DDR3. Serial Presence-Detect EEPROM Operation DDR3 SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to comply with JEDEC standard JC-45, "Appendix X: Serial Presence Detect (SPD) for DDR3 SDRAM Modules." These bytes identify module-specific timing parameters, configuration information, and physical attributes. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device occur via a standard I2C bus using the DIMM’s SCL (clock) SDA (data), and SA (address) pins. Write protect (WP) is connected to V SS, permanently disabling hardware write protection. For further information refer to Micron technical note TN-04-42, "Memory Module Serial Presence-Detect." PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Electrical Specifications Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device's data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 9: Absolute Maximum Ratings Symbol Parameter Min Max Units VDD VDD supply voltage relative to VSS –0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS –0.4 1.975 V Table 10: Operating Conditions Symbol Parameter Min Nom Max Units VDD VDD supply voltage 1.425 1.5 1.575 V IVTT Termination reference current from VTT –600 – 600 mA VTT Termination reference voltage (DC) – command/address bus 0.49 × VDD - 20mV 0.5 × VDD 0.51 × VDD + 20mV V Address inputs, RAS#, CAS#, WE#, S#, CKE, ODT, BA, CK, CK# –16 0 16 µA DM –2 0 2 II Input leakage current; Any input 0V ≤ VIN ≤ VDD; VREF input 0V ≤ VIN ≤ 0.95V (All other pins not under test = 0V) IOZ Output leakage current; DQ, DQS, 0V ≤ VOUT ≤ VDD; DQS# DQ and ODT are disabled; ODT is HIGH –5 0 5 µA IVREF VREF supply leakage current; VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) –8 0 8 µA Module ambient operating temperature Commercial 0 – 70 °C –40 – 85 °C DDR3 SDRAM component case operating temperature Commercial 0 – 95 °C –40 – 95 °C TA TC Notes: PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN Industrial Industrial Notes 1 2, 3 2, 3, 4 1. VTT termination voltage in excess of the stated limit will adversely affect the command and address signals’ voltage margin and will reduce timing margins. 2. TA and TC are simultaneous requirements. 3. For further information, refer to technical note TN-00-08: “Thermal Applications,” available on Micron’s Web site. 4. The refresh rate is required to double when 85°C < TC ≤ 95°C. 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM DRAM Operating Conditions DRAM Operating Conditions Recommended AC operating conditions are given in the DDR3 component data sheets. Component specifications are available on Micron’s web site. Module speed grades correlate with component speed grades, as shown below. Table 11: Module and Component Speed Grades DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade Component Speed Grade -2G1 -093 -1G9 -107 -1G6 -125 -1G4 -15E -1G1 -187E -1G0 -187 -80C -25E -80B -25 Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system's memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM IDD Specifications IDD Specifications Table 12: DDR3 IDD Specifications and Conditions – 1GB (Die Revision G) Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 560 520 480 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 720 680 640 mA Precharge power-down current: Slow exit IDD2P0 96 96 96 mA Precharge power-down current: Fast exit IDD2P1 240 240 200 mA Precharge quiet standby current IDD2Q 320 280 280 mA Precharge standby current IDD2N 360 320 280 mA Precharge standby ODT current IDD2NT 440 400 360 mA Active power-down current IDD3P 380 240 240 mA Active standby current IDD3N 360 320 320 mA Burst read operating current IDD4R 1120 1000 880 mA Burst write operating current IDD4W 1160 1000 880 mA Refresh current IDD5 1360 1320 1280 mA Self refresh temperature current: MAX TC = 85°C IDD6 64 64 64 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 80 80 80 mA All banks interleaved read current IDD7 1960 1880 1560 mA Reset current IDD8 112 112 112 mA PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM IDD Specifications Table 13: DDR3 IDD Specifications and Conditions – 2GB (Die Revision M) Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 560 520 480 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 640 600 560 mA Precharge power-down current: Slow exit IDD2P0 96 96 96 mA Precharge power-down current: Fast exit IDD2P1 296 256 216 mA Precharge quiet standby current IDD2Q 230 280 240 mA Precharge standby current IDD2N 344 304 264 mA Precharge standby ODT current IDD2NT 360 320 280 mA Active power-down current IDD3P 400 360 320 mA Active standby current IDD3N 440 400 360 mA Burst read operating current IDD4R 1248 1128 1040 mA Burst write operating current IDD4W 1160 1040 920 mA Refresh current IDD5 1560 1520 1480 mA Self refresh temperature current: MAX TC = 85°C IDD6 96 96 96 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 120 120 120 mA All banks interleaved read current IDD7 1920 1800 1680 mA Reset current IDD8 112 112 112 mA PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM IDD Specifications Table 14: DDR3 IDD Specifications and Conditions – 4GB (Die Revision D) Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 600 520 480 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 696 656 616 mA Precharge power-down current: Slow exit IDD2P0 160 160 160 mA Precharge power-down current: Fast exit IDD2P1 296 256 240 mA Precharge quiet standby current IDD2Q 376 336 312 mA Precharge standby current IDD2N 400 360 320 mA Precharge standby ODT current IDD2NT 400 360 320 mA Active power-down current IDD3P 504 464 424 mA Active standby current IDD3N 496 456 416 mA Burst read operating current IDD4R 1496 1336 1176 mA Burst write operating current IDD4W 1320 1160 1000 mA Refresh current IDD5 1760 1680 1640 mA Self refresh temperature current: MAX TC = 85°C IDD6 176 176 176 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 224 224 224 mA All banks interleaved read current IDD7 2320 2000 1680 mA Reset current IDD8 176 176 176 mA PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM IDD Specifications Table 15: DDR3 IDD Specifications and Conditions – 4GB (Die Revision E) Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) component data sheet Parameter Symbol 1600 1333 1066 Units Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 440 376 352 mA Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 528 496 472 mA Precharge power-down current: Slow exit IDD2P0 144 144 144 mA Precharge power-down current: Fast exit IDD2P1 256 224 208 mA Precharge quiet standby current IDD2Q 256 224 216 mA Precharge standby current IDD2N 256 323 224 mA Precharge standby ODT current IDD2NT 312 280 256 mA Active power-down current IDD3P 304 280 256 mA Active standby current IDD3N 304 280 256 mA Burst read operating current IDD4R 1256 1120 984 mA Burst write operating current IDD4W 1000 880 760 mA Refresh current IDD5 1880 1824 1792 mA Self refresh temperature current: MAX TC = 85°C IDD6 160 160 160 mA Self refresh temperature current (SRT-enabled): MAX TC = 95°C IDD6ET 200 200 200 mA All banks interleaved read current IDD7 1760 1520 1280 mA Reset current IDD8 160 160 160 mA PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Serial Presence-Detect EEPROM Serial Presence-Detect EEPROM For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 16: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to VDDSPD Parameter/Condition Symbol Min Max Units VDDSPD 3.0 3.6 V VIL –0.45 VDDSPD x 0.3 V Input high voltage: Logic 1; All inputs VIH VDDSPD x 0.7 VDDSPD + 1.0 V Output low voltage: IOUT = 3mA VOL – 0.4 V Input leakage current: VIN = GND to VDD ILI 0.1 2.0 µA Output leakage current: VOUT = GND to VDD ILO 0.05 2.0 µA Supply voltage Input low voltage: Logic 0; All inputs Table 17: Serial Presence-Detect EEPROM AC Operating Conditions Parameter/Condition Symbol Min Max Units tSCL 10 400 kHz Clock frequency Notes Clock pulse width HIGH time tHIGH 0.6 – µs Clock pulse width LOW time tLOW 1.3 – µs SDA rise time tR – 300 µs 1 SDA fall time tF 20 300 ns 1 Data-in setup time tSU:DAT 100 – ns Data-in hold time tHD:DI 0 – µs Data-out hold time tHD:DAT 200 900 ns Data out access time from SCL LOW tAA:DAT 0.2 0.9 µs 2 Start condition setup time tSU:STA 0.6 – µs 3 Start condition hold time tHD:STA 0.6 – µs Stop condition setup time tSU:STO 0.6 – µs tBUF 1.3 – µs tW – 10 ms Time the bus must be free before a new transition can start WRITE time Notes: PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 1. Guaranteed by design and characterization, not necessarily tested. 2. To avoid spurious start and stop conditions, a minimum delay is placed between the falling edge of SCL and the falling or rising edge of SDA. 3. For a restart condition, or following a WRITE cycle. 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved. 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM Module Dimensions Module Dimensions Figure 3: 204-Pin DDR3 SODIMM Front view 3.8 (0.150) MAX 67.75 (2.667) 67.45 (2.656) 2.0 (0.079) R (2X) U1 1.8 (0.071) (2X) U3 U2 U4 U5 30.15 (1.187) 29.85 (1.175) 20.0 (0.787) TYP 6.0 (0.236) TYP 1.0 (0.039) TYP 2.0 (0.079) TYP Pin 1 0.45 (0.018) TYP Pin 203 63.6 (2.504) TYP 45° 4X 1.10 (0.043) 0.90 (0.035) 0.6 (0.024) TYP Back view U6 U7 U8 U9 4.0 (0.157) TYP 2.55 (0.10) TYP 3.0 (0.12) TYP Pin 204 39.0 (1.535) TYP Pin 2 21.0 (0.827) TYP 24.8 (0.976) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef8441a29e jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2010 Micron Technology, Inc. All rights reserved.