TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Introduction
Technical Note
Migrating from S29GL-N/P Devices to
MT28EW NOR Flash Devices
Introduction
This technical note describes the process for converting a system design for the Spansion S29GL-N and S29GL-P devices to Micron's MT28EW, single-level cell, automotive
NOR Flash device, including 512Mb and 1Gb densities.
This document is written based on device information available at publication time. In
case of inconsistency, information contained in the relevant MT28EW data sheet supersedes the information in this technical note. This technical note does not provide detailed device information. The standard density specific device data sheet provides a
complete description of device functionality, operating modes, and specifications.
Table 1: 512Mb Part Number Comparison
Part Number
Package Type
56-pin TSOP
(14mm x 20mm)
Micron MT28EW
Spansion S29GL-N
MT28EW512ABA1HJS-0AAT
MT28EW512ABA1LJS-0AAT
64-ball LBGA
(11mm x 13mm)
MT28EW512ABA1HPC-0AAT
MT28EW512ABA1LPC-0AAT
Notes:
Spansion S29GL-P
S29GL512NxxTFA01
S29GL512PxxTFA01
S29GL512NxxTFAV1
S29GL512PxxTFAV1
–
S29GL512PxxTFAR1
S29GL512NxxTFA02
S29GL512PxxTFA02
S29GL512NxxTFAV2
S29GL512PxxTFAV2
–
S29GL512PxxTFAR2
S29GL512NxxFFA01
S29GL512PxxFFA01
S29GL512NxxFFAV1
S29GL512PxxFFAV1
–
S29GL512PxxFFAR1
S29GL512NxxFFA02
S29GL512PxxFFA02
S29GL512NxxFFAV2
S29GL512PxxFFAV2
–
S29GL512PxxFFAR2
1. To integrate line items on a variety of customer applications, the MT28EW device unifies the speed and voltage options.
2. For valid combination details, refer to www.micron.com/products and www.spansion.com.
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1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All
information discussed herein is provided on an "as is" basis, without warranties of any kind.
TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Introduction
Table 2: 1Gb Part Number Comparison
Part Number
Package Type
56-pin TSOP
(14mm x 20mm)
Micron MT28EW
Spansion S29GL-P
MT28EW01GABA1HJS-0AAT
S29GL01GPxxTFA01
S29GL01GPxxTFAV1
S29GL01GPxxTFAR1
MT28EW01GABA1LJS-0AAT
S29GL01GPxxTFA02
S29GL01GPxxTFAV2
S29GL01GPxxTFAR2
64-ball LBGA
(11mm x 13mm)
MT28EW01GABA1HPC-0AAT
S29GL01GPxxFFA01
S29GL01GPxxFFAV1
S29GL01GPxxFFAR1
MT28EW01GABA1LPC-0AAT
S29GL01GPxxFFA02
S29GL01GPxxFFAV2
S29GL01GPxxFFAR2
Notes:
1. To integrate line items on a variety of customer applications, the MT28EW device unifies the speed and voltage options.
2. For valid combination details, refer to www.micron.com/products and www.spansion.com.
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Comparative Overview
Comparative Overview
The MT28EW is compatible with the S29GL-S 512Mb and 1Gb devices, but provides superior program and erase performance.
Table 3: Features Comparison
Feature
Micron MT28EW
Spansion S29GL-N
Spansion S29GL-P
Notes
Single–level cell (SLC)
floating gate
110nm MirrorBit
90nm MirrorBit
1
Density 512Mb,
1Gb
128Mb,
256Mb,
512M,
–
128Mb,
256Mb,
512M,
1Gb
Package 64-ball LBGA (11mm x
13mm),
56-pin TSOP (14mm x 20mm)
64-ball fortified BGA
(LAA064)
(11mm x 13mm),
56-pin TSOP (14mm x
20mm)
64-ball fortified BGA
(LAA064)
(11mm x 13mm),
56-pin TSOP (14mm x 20mm)
Uniform 128KB
Uniform 128KB
Uniform 128KB
x8/x16
x8/x16
x8/x16
16 words
8 words
8 words
128 words (8 + 120)
128 words (8 + 120)
128 words (8 + 120)
256-byte (x8 mode)
512-word (x16 mode)
16-word
32-word
VCC range
2.7V to 3.6V
2.7V to 3.6V
2.7V to 3.6V
VCCQ range
1.65 to VCC
1.65 to VCC
1.65 to VCC
VPP accelerated (TYP)
9V
12V
12V
CFI version
1.3
1.3
1.3
High voltage auto select (A9)
No
Yes
Yes
Individual block write
protection
Yes
Yes
Yes
Permanent block locking
(OTP block)
Yes
Yes
Yes
Process technology
Block architecture
Data bus
Page read size
Extended memory
block
Program write buffer
size
Hardware protection
Yes
Yes
Yes
Unlock bypass
Yes
Yes
Yes
Chip erase
Yes
Yes
Yes
RY/BY# pin
Yes
Yes
Yes
Blank check
Yes
No
No
Multiblock erase
Yes
Yes
Yes
Data polling
Yes
Yes
Yes
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2
3
4, 5
4, 6
4, 5
7
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© 2014 Micron Technology, Inc. All rights reserved.
TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Comparative Overview
Table 3: Features Comparison (Continued)
Feature
Micron MT28EW
Spansion S29GL-N
Spansion S29GL-P
EFI CRC
Yes
No
No
Notes:
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Notes
1. MT28EW SLC floating-gate technology provides improved performance, optimized quality, and reliability.
2. Although the MT28EW provides a larger program write buffer than S29GL-P or S29GL-N,
no software updates are required during migration. However, software updates leveraging the MT28EW device's larger write buffer can yield improved read performance. To
configure the MT28EW device's software, query CFI word address 4Ch.
3. The MT28EW features a larger program write buffer than either the S29GL-P or S29GLN, no software updates are required during migration. However, software up- dates leveraging the MT28EW device's larger write buffer can yield improved performance. To
configure the MT28EW device's software, query CFI word address2Ah on the buffer size
option, in either x8 or x16 mode(Refer to TN-13-07 for detail patch).
4. To avoid damaging the device, designs applying VPP/WP# voltages higher than 9.5V
(MAX) should be modified. VPP/WP# should not remain at VPPH for than 80 hours cumulative.
5. By applying 9V (nominal) to the VPP/WP# pad, the MT28EW device supports VPPH UNLOCK BYPASS, ACCELERATED BUFFERED PROGRAMMING, and ACCELERATED CHIP
ERASE operations. In the 56-pin TSOP package, pin 16 should be modified, and in the
64-ball LBGA package, ball B4 should be modified
6. The MT28EW device does not support high-voltage auto select on address A9. Instead,
use the following command sequence to enter auto select mode: AAh/55h/90h. Applying 12V to address A9 or VPP may damage the device.
7. Refer to the Micron data sheet for detailed BLANK CHECK command sets.
4
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© 2014 Micron Technology, Inc. All rights reserved.
TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Hardware and Mechanical Considerations
Hardware and Mechanical Considerations
The MT28EW device is available in 56-pin TSOP and 64-ball LBGA packages, both leadfree.
For compatibility, the MT28EW device pin and ball assignments and physical dimensions are equivalent to those in the S29GL-N and S29GL-P devices. Systems migrating
from a fortified BGA to an LBGA should not need to modify the reflow process in manufacturing.
Figure 1: 56-Pin TSOP (Top View)
A23
A22
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
RST#
A21
VPP/WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
RFU
RFU
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
Notes:
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1.
2.
3.
4.
A24
A25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
RFU
VCCQ
A-1 is the least significant address bit in x8 mode.
A23 is valid for 256Mb and above; otherwise, it is RFU.
A24 is valid for 512Mb and above; otherwise, it is RFU.
A25 is valid for 1Gb and above; otherwise, it is RFU.
5
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Hardware and Mechanical Considerations
Figure 2: 64-Ball LBGA (Top View – Balls Down)
1
2
NC
A3
A26
3
4
5
6
7
8
A7 RY/BY# WE#
A9
A13
NC
A4
A17 VPP/WP# RST#
A8
A12
A22
NC
A2
A6
A18
A21
A10
A14
A23
NC
A1
A5
A20
A19
A11
A15
VCCQ
NC
A0
DQ0 DQ2
DQ5
DQ7
A16
VSS
VCCQ
CE#
DQ8 DQ10 DQ12 DQ14 BYTE# A24
A
B
C
D
E
F
G
NC
OE# DQ9 DQ11
VCC
DQ13 D15/A-1 A25
NC
VSS
DQ4
DQ6
H
1.
2.
3.
4.
5.
Notes:
DQ1 DQ3
VSS
NC
A-1 is the least significant address bit in x8 mode.
A23 is valid for 256Mb and above; otherwise, it is RFU.
A24 is valid for 512Mb and above; otherwise, it is RFU.
A25 is valid for 1Gb and above; otherwise, it is RFU.
A26 is valid for 2Gb and above; otherwise, it is RFU.
Table 4: Signal Comparison
MT28EW
S29GL-N
S29GL-P
Type
Description
A[MAX:0]
A[MAX:0]
Input
Address inputs
BYTE#
BYTE#
Input
Byte/Word (cannot be floated)
CE#
CE#
Input
Chip enable
OE#
OE#
Input
Output enable
RST#
RESET#
Input
Reset
WE#
WE#
Input
Write enable
VPP/WP#
WP#/Acc
Input
VPP/Write Protect
DQ15/A-1
DQ15/A-1
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I/O or in- Data I/O or address input
put
6
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Hardware and Mechanical Considerations
Table 4: Signal Comparison (Continued)
MT28EW
S29GL-N
S29GL-P
Type
DQ[14:8]
DQ[14:8]
I/O
Data I/O
DQ[7:0]
DQ[7:0]
I/O
Data I/O
RY/BY#
RY/BY#
Output
Ready/Busy
Description
VCC
VCC
Supply
Supply voltage
VCCQ
VIO
Supply
I/O buffer supply voltage
VSS
VSS
–
Ground
NC
NC
–
No connect
Input/Output Capacitance
Table 5: Input/Output Capacitance Comparison
MT28EW
Parameter
Description
CIN
COUT
S29GL-N
Min
Max
Typ
Input capacitance
3
11
3.5
Output capacitance
3
7
5.4
Note:
S29GL-P
Max
Typ
Max
Unit
9
6
10
pF
12
10
12
pF
1. CIN values for RESET, WP#/ACC, and CE# in Spansion's S29GL-N/S29GL-P devices are likely
higher than the listed value.
Power Supply Decoupling
Flash memory devices require careful power supply decoupling to prevent external
transient noise from affecting device operations, and to prevent internally generated
transient noise from affecting other devices in the system. Ceramic chip capacitors of
0.01μF to 0.1μF should be used between each V CC, V CCQ, and V PP supply connections
and system ground. These high-frequency, inherently low-inductance capacitors
should be placed as close as possible to the device package, or on the opposite side of
the PCB close to the center of the device package footprint.
Larger electrolytic or tantalum bulk capacitors (4.7μF to 33.0μF) should also be distributed as needed throughout the system to compensate for voltage sags and surges
caused by circuit trace inductance. Transient current magnitudes depend on the capacitive and inductive loading on the device’s outputs. For the best signal integrity and device performance, high-speed design rules should be used when designing the PCB. Final signal reflections (overshoot or undershoot) may vary by each system.
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Software Considerations
Software Considerations
Micron MT28EW and Spansion S29GL-N/P command sets are compatible. Micron provides some unique commands to support enhanced features such as EFI BLANK
CHECK and EFI CRC functions.
Manufacturer ID and Auto Select Comparison
On MT28EW, the only way to use auto select mode is to issue an AUTO SELECT ENTRY
(90h) command. The S29GL-N/S29GL-P can use the auto select mode via a high voltage
(A9) method.
Micron and Spansion have different manufacturer ID and different protection register
indicators. Therefore, a slight modification in the software is required during migration.
Table 6: Auto Select Comparison – Word Mode
Description
Manufacturer ID
Device ID (cycle 1)
Device ID (cycle 3)
Address
MT28EW
S29GL-N
S29GL-P
–
(Base) + 00h
0089h
0001h
0001h
512Mb
(Base) + 01h
227Eh
227Eh
227Eh
1Gb
(Base) + 0Eh
2223h
2223h
2223h
–
(Base) + 0Fh
2228h
-
2228h
Factory locked
(Base) + 03h
0099h
0098h
0099h
Protection register indicator
(VPP/WP# locks highest
block)
Factory unlocked
0019h
0018h
0019h
Protection register indicator
(VPP/WP# locks lowest
block)
Factory locked
0089h
0088h
0089h
Factory unlocked
0009h
0008h
0009h
0001h
0001h
0001h
0000h
0000h
0000h
Block protection
Protected
(Base) + 02h
Unprotected
Unlock Bypass Mode
The use of MT28EW auto select mode (AAh/55h/90h) is not recommended when the
device is in unlock bypass mode (AAh/55h/20h). However, auto select mode can be
used to read information when the device is in unlock bypass mode. In this case, an additional F0h command must be issued after the AUTO SELECT READ command to return to unlock bypass mode. In addition, a subsequent AUTO SELECT MODE command
must be issued to read out correct ID information. This additional command is not required for S29GL-N or S29GL-P. In the following code example, the F0h command is
written to any address during the first cycle:
FlashWrite(ANY_ADDR, (uCPUBusType)CMD(0x00F0));
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Software Considerations
To access auto select information, use the following command sequence (AAh/55h/
90h), but only when the device is not in unlock bypass mode. The following example
demonstrates how to use auto select mode to read information from the device:
ReturnType ReadAutoSelectCode(uCPUBusType *addr, uCPUBusType
*ucrCode) { /*Send the auto select command */ /* First cycle */
FlashWrite(ConvAddr(0x00555),(uCPUBusType)CMD(0x00AA)); /* Second cycle */ FlashWrite(ConvAddr(0x002AA),(uCPUBusType)CMD(0x0055)); /* Third cycle */ FlashWrite(ConvAddr(0x00555),(uCPUBusType)CMD(0x0090)); /* Read the code */
*ucrCode = FlashRead(addr); /* Return to read array mode */ /*
First cycle: write 0x00F0 to any address */ FlashWrite(ANY_ADDR,
(uCPUBusType)CMD(0x00F0); /* Check flash response (more flashes
could */ /* give different results) */ return FlashResponseIntegrityCheck(ucrCode); }
EXIT PROTECTION COMMAND SET Command
MT28EW provides three software protection modes: Volatile, nonvolatile, and password
protection. The device is shipped with all blocks unprotected. On first use, the device
can be activated in either nonvolatile protection mode or password protection mode.
The EXIT PROTECTION COMMAND SET (90/00h) command is used to exit the lock
register, password protection, nonvolatile protection, volatile protection, and non-volatile protection bit lock bit command set modes and return the device to read mode.
The MT28EW second command cycle must be 00h. Although the Spansion S29GL-P/N
devices specify that the second command cycle has to be 00h, other command codes
are accepted to exit the above modes.
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
CFI Comparison
CFI Comparison
CFI differences exist between MT28EW and S29GL-P/S29GL-N due to device features
and performance characteristics.
Table 7: CFI Comparison
Address
1Dh
Description
MT28EW
S29GL-N
S29GL-P
0085h
0000h
0000h
0095h
0000h
0000h
0005h
0007h
0006h
0009h
0007h
0006h
0008h
000Ah
0009h
512Mb
0011h
0000h
0012h
1Gb
0012h
N/A
0013h
times typi-
0003h
0003h
0003h
0002h
0005h
0005h
0002h
0004h
0003h
0003h
0000h
0002h
x8
08h
0005h
0006h
x16
000Ah
001Ch
0010h
0014h
0003h
0002h
0002h
0085h
00B5h
00B5h
VPPH (programming) supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
1Eh
VPPH (programming) supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
1Fh
Typical timeout for single byte/word program = 2Nµs
20h1
Typical timeout for maximum-size buffer program =
21h
Typical timeout for individual block erase = 2Nµs
22h
Typical timeout for full-chip erase =
2Nµs
2N
2Nµs
23h
Maximum timeout for byte/word program =
cal
24h
Maximum timeout for buffer program = 2N times typical
2N
25h
Maximum timeout for individual block erase =
ical
26h
Maximum timeout for chip erase = 2N times typical
2Ah
Maximum number of bytes in multiple byte write =
2N
45h
Address sensitive unlock (bits[1:0])
times typ-
0 = Required, 1 = Not required
Silicon revision number (bits[7:2])
4Ch
Page mode
00 = Not supported
01 = 4-word page
02 = 8-word page
03 = 16-word page
4Dh
VPPH supply minimum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 100mV
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Performance Comparison
Table 7: CFI Comparison (Continued)
Address
4Eh
Description
MT28EW
S29GL-N
S29GL-P
0095h
00C5h
00C5h
VPPH supply maximum program/erase voltage
Bits[7:4] hex value in volts
Bits[3:0] BCD value in 10mV
Note:
1. Spansion GL-P/N define this value as a minimum instead of a maximum; that is, the typical timeout for a minimum size buffer write = 2nμs.
Performance Comparison
Table 8: Program and Erase Performance Comparison – Word Mode
MT28EW
Parameter
Block erase
S29GL-N
S29GL-P
Typ
Max
Typ
Max
Typ
Max
Unit
200
1100
500
3500
500
3500
ms
512Mb
104
–
256
1024
256
1024
s
1Gb
208
–
–
–
512
2048
512Mb
95
–
–
–
–
–
Erase suspend latency time
–
20
5
20
5
20
µs
Program suspend latency time
–
15
5
15
5
15
µs
25
200
60
–
60
480
µs
16
words
50
–
240
–
–
–
µs
32
words
92
460
–
–
480
–
64
words
117
600
–
–
–
–
128
words
171
900
–
–
–
–
256
words
285
1500
–
–
–
–
512
words
512
2000
–
–
–
–
Accelerated full buffered program
410
–
200
–
432
–
Chip erase Accelerated chip
erase Single word program
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µs
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TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Power-on and Reset Timings
Table 9: Read AC Performance Comparison – 3V
Note 1 applies to entire table
Symbol
Parameter
Address valid to output valid
Page address access
OE# LOW to output valid
MT28EW
S29GL-N
S29GL-P
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Unit
tACC
tAVQV
–
105
–
90/110
–
100/120
ns
tPAGE
tAVQV1
–
25
–
25
–
25
ns
tOE
tGLQV
–
25
–
25
–
25
ns
1. For MT28EW, access times applies to –40°C/105°C automotive temperature range. For
Spansion GL-N/GL-P applies to standard temperature range.
Note:
Table 10: Power Consumption Comparison
MT28EW
Parameter
VCC random read current
512Mb
Max
Min
Max
Min
Max
Unit
ICC1
26
31
30
50
30
55
mA
12
16
1
10
1
10
70
200
1
5
1
5
75
230
1
5
1
5
35
50
50
90
50
90
35
50
50
90
50
90
ICC2
1Gb
VCC erase current
S29GL-P
Typ
VCC page read current
VCC standby
current
S29GL-N
Symbol
ICC3
VCC program current
µA
mA
Power-on and Reset Timings
Table 11: Reset Timing Comparison
Symbol
Parameter
MT28EW
S29GL-N
S29GL-P
Legacy
JEDEC
Min
Max
Min
Max
Min
Max
Unit
tVCS
tVCHPH
300
–
50
–
35
–
µs
tREADY
tPLRH
–
25
–
20
–
35
µs
RST# pulse width
tRP
tPLPH
100
–
500
–
3500
–
ns
RST# HIGH to CE# LOW, OE# LOW
tRH
tPHEL,
50
–
50
–
200
–
ns
0
–
0
–
0
–
ns
VCC power valid to RST# HIGH
RST# LOW to read mode during
program or erase
tPHGL
RY/BY# HIGH to CE# LOW, OE#
LOW
PDF: 09005aef8610da81
tn1342_mg_s29gl_n-p_to_mt28ew.pdf - Rev. A 12/14 EN
tRB
tRHEL,
tRHGL
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.
TN-13-42: Migrating S29GL-N/P to MT28EW NOR Flash Devices
Revision History
Revision History
Rev. A – 12/14
• Initial release
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All other trademarks are the property of their respective owners.
PDF: 09005aef8610da81
tn1342_mg_s29gl_n-p_to_mt28ew.pdf - Rev. A 12/14 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.