1Gb: x4, x8, x16 DDR2 SDRAM Addendum
Features
DDR2 SDRAM Data Sheet Addendum
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Options1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
• Configuration
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
• FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm)
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm)
• FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm)
• FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm)
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
• Special Options
– Product Longevity Program (PLP)
• Self refresh
– Standard
– Low-power
• Operating temperature
– Commercial (0°C ≤ T C ≤ +85°C)
– Industrial (–40°C ≤ T C ≤ +95°C;
–40°C ≤ T A ≤ +85°C)
– Automotive (–40°C ≤ T C , T A ≤
+105°C)
• Revision
VDD = 1.8V ±0.1V, V DDQ = 1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Automotive temperature (AT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Note:
PDF: 09005aef8573b635
1Gb_ddr2_sdram_addendum.pdf - Rev. B 03/14 EN
1
Marking
256M4
128M8
64M16
HR
CF
HW
JN
-187E
-25E
-25
-3
X
None
L
None
IT
AT
:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
1Gb: x4, x8, x16 DDR2 SDRAM Addendum
Features
Figure 1: 1Gb DDR2 Part Numbers
Example Part Number:
MT47H128M8CF-25
-
Configuration
Package
Speed
Revision
{
MT47H
:
:H
Configuration
Revision
Temperature
256 Meg x 4
256M4
IT Industrial temperature
128 Meg x 8
128M8
64 Meg x 16
64M16
AT Automotive temperature
Special Options
Standard
Package
L
Pb-free
84-ball 8mm x 12.5mm FBGA
HR
60-ball 8mm x 11.5mm FBGA
HQ
60-ball 8mm x 10.0mm FBGA
CF
X Product Longevity Program
Lead solder
Note:
84-ball 8mm x 12.5mm FBGA
HW
60-ball 8mm x 10mm FBGA
JN
60-ball 8mm x 11.5mm FBGA
HV
Low power
-187E
Speed Grade
tCK = 1.875ns, CL = 7
-25E
tCK = 2.5ns, CL = 5
-25
tCK = 2.5ns, CL = 6
-3
tCK = 3ns, CL = 5
1. Not all speeds and configurations are available in all packages.
FBGA Part Number System
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron’s Web site:
http://www.micron.com.
PDF: 09005aef8573b635
1Gb_ddr2_sdram_addendum.pdf - Rev. B 03/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
1Gb: x4, x8, x16 DDR2 SDRAM Addendum
Revision History
Revision History
Rev. B – 03/14
• Changed "Premium Lifecycle Product" to "Product Longevity Program"
Rev. A – 11/13
• Initial release based on the 1Gb x4, x8, x16 DDR2 SDRAM, Rev. X 10/11 data sheet
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef8573b635
1Gb_ddr2_sdram_addendum.pdf - Rev. B 03/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.