ROHM RSX205L-30

Data Sheet
Schottky Barrier Diode
RSX205L-30
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
2.0
2.0
①
②
0.1±0.02
0.1
5.0±0.3
8
1.2±0.3
5
4.5±0.2
lFeatures
1)Small power mold type.(PMDS)
2)High reliability.
3)Low IR , Low VF.
4.2
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
lConstruction
Silicon epitaxial planer
lStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
lTaping dimensions (Unit : mm)
2.0±0.05
0.3
φ 1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ 1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)On the Glass epoxy board, Tc=95°C MAX.
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
30
30
2.0
60
150
Unit
V
V
A
A
C
C
-40 to +150
Min.
Typ.
Max.
Unit
-
-
0.49
V
-
-
200
μA
1/4
Conditions
IF=2.0A
VR=30V
2011.10 - Rev.A
Data Sheet
RSX205L-30
1
1000000
Ta=125°C
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
0.01
Ta=125°C
Ta=150°C
100000
Ta=150°C
10000
Ta=75°C
1000
Ta=25°C
100
10
Ta=-25°C
1
0.1
0.001
0
100
200
300
400
0
500
5
10
15
20
30
460
1000
f=1MHz
IF=2A
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
25
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
100
10
450
440
430
AVE:444.1mV
420
410
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
350
1000
VR=30V
800
700
600
500
400
300
AVE:103.1mA
f=1MHz
VR=0V
340
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(mA)
900
330
320
310
300
290
AVE:300.1pF
280
200
270
100
260
0
250
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
200
30
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RSX205L-30
IFSM
8.3ms
150
1cyc
100
50
AVE:66.0A
0
IF=0.5A
IR=1A
Irr=0.25*IR
25
20
15
10
5
AVE:8.30ns
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
90
IFSM
80
8.3ms
70
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
90
8.3ms
1cyc.
60
50
40
30
time
70
60
50
40
30
20
20
10
10
0
IFSM
80
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
1000
Rth(j-a)
0.8
100
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
On glass-epoxy substrate
Rth(j-c)
10
D=1/2
0.6
0.4
Sin(θ＝180)
1
DC
0.2
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
0
1000
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RSX205L-30
Io
5
2
0A
0V
4.5
VR
t
4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
1.5
D.C.
1
Sin(θ＝180)
D=1/2
0.5
D=t/T
VR=15V
Tj=150°C
D.C.
3.5
T
3
D=1/2
2.5
2
1.5
Sin(θ＝180)
1
0.5
0
0
0
10
20
0
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
AVE:10.8kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A