SK1020D2 ... SK10100D2 SK1020D2 ... SK10100D2 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – Einzeldiode Version 2012-10-05 1.2 4.5 Nominal Current Nennstrom 10.25 ±0.5 ±0.2 4 Type Typ 1 2 3 1.3 0.8 Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case Kunststoffgehäuse TO-263AB D²PAK Weight approx. Gewicht ca. 5.08 0.4 10 A 4 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert K 1 2 3 Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward Voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A SK1020D2 20 20 < 0.51 < 0.55 SK1030D2 30 30 < 0.51 < 0.55 SK1040D2 40 40 < 0.51 < 0.55 SK1045D2 45 45 < 0.51 < 0.55 SK1050D2 50 50 < 0.63 < 0.70 SK1060D2 60 60 < 0.63 < 0.70 SK1080D2 80 80 < 0.71 < 0.83 SK10100D2 100 100 < 0.71 < 0.83 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) TA = 25°C IFSM 135/150 A SK1080D2... TA = 25°C SK10100D2 IFSM 115/125 A TA = 25°C i2t 80 A2s Tj TS -50...+150°C -50...+175°C Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SK1020D2... SK1060D2 Rating for fusing – Grenzlastintegral, t < 10 ms Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 Tj = 25°C Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 SK1020D2 ... SK10100D2 Characteristics Kennwerte Leakage current Sperrstrom SK1020D2... SK1045D2 Tj = 25°C Tj = 100°C VR = VRRM IR < 300 µA < 45 mA Leakage current Sperrstrom SK1050D2... Tj = 25°C SK10100D2 Tj = 100°C VR = VRRM IR < 200 µA < 25 mA RthC < 1.5 K/W Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse 102 120 [%] SK1020D2...SK1045D2 [A] 100 SK1050D2, SK1060D2 10 80 1 60 40 10-1 20 IFAV 0 SK1080D2, SK10100D2 IF 10 -2 0 TC 50 100 150 0 [°C] Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Gehäusetemperatur 10 2 104 [A] 0.4 0.6 1.0 VF [V] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Tj = 150°C Tj = 125°C [µA] 10 Tj = 100°C 10 3 Tj = 125°C Tj = 25°C Tj = 75°C Tj = 150°C 1 10 2 Tj = 50°C 10 -1 101 IF IR 10 -2 2 SK1020D2...SK1045D2 0 VF 0.4 0.6 [V] 1.0 Forward characteristics (typ ical values) Du rch lassken nlinien (typ isch e Werte) 10 0 Tj = 25°C VRRM = 20V ... 45V VRRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung http://www.diotec.com/ © Diotec Semiconductor AG