PPS560, PPS5100 PPS560, PPS5100 Surface Mount Schottky Rectifier Diodes Schottky-Gleichrichterdioden für die Oberflächenmontage Version 2014-08-21 Nominal Current Nennstrom ±0.2 1.1 ±0.2 0.8±0.15 1.8±0.1 LYYWW ±0.2 ±0.1 1.3 ±0.1 5.3±0.2 0.3 6.5 3.3±0.2 4.0 ±0.1 3.0 0.6 1.84 0.9 Dimensions - Maße [mm] 5A Repetitive peak reverse voltage Periodische Spitzensperrspannung 60...100 V Plastic case Kunststoffgehäuse PowerSMD Weight approx. Gewicht ca. 0.1 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Green Molding Halogen-Free Features Vorteile Compatible to industry standard packages Kompatibel zu industrieüblichen Gehäusen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repet. / Surge peak rever. voltage Periodische- / Spitzen-Sperrspg. VRRM [V] / VRSM [V] Forward Voltage Durchlass-Spannung VF [V] Tj = 125°C 1) Forward Voltage Durchlass-Spannung VF [V] Tj = 25°C 1) IF = 2 A IF = 5 A IF = 2 A IF = 5 A PPS560 60 tbd tbd < tbd < 0.69 PPS5100 100 tbd tbd < tbd < 0.88 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 20A 2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 150/165 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 112 A2s 2) Tj TS -50...+150°C -50...+150°C Both anode pins connected – Beide Anodenanschlüsse kontaktiert © Diotec Semiconductor AG http://www.diotec.com/ 1 PPS560, PPS5100 Characteristics Kennwerte Leakage current Sperrstrom PPS560 Tj = 25°C Leakage current Sperrstrom PPS5100 Tj = 125°C Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM VR = VRRM IR IR IR typ. tbd µA < 150 µA typ. tbd mA VR = VRRM VR = VRRM VR = VRRM IR IR IR typ. tbd µA < 15 µA typ. tbd mA Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse RthC Typical Junction Capacitance Typische Sperrschichtkapazität VR = 4 V Cj < 2.0 K/W 200 pF 120 [%] 100 80 60 40 20 IFAV 0 0 TT,L 50 100 150 [°C] Rated forward current vs. temp. of the terminals Zul. Richtstrom in Abh. v. d. Temp. der Terminals 2 http://www.diotec.com/ © Diotec Semiconductor AG