RENESAS RJK5012DPP-M0

Preliminary Datasheet
RJK5012DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0421EJ0100
Rev.1.00
May 31, 2011
Features
• Low on-resistance
RDS(on) = 0.515 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
IDNote4
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Note2
Pch
θch-c
Tch
Tstg
Ratings
500
±30
12
24
12
24
4
0.88
Unit
V
V
A
A
A
A
A
mJ
30
4.17
150
–55 to +150
W
°C/W
°C
°C
PW ≤ 10 μs, duty cycle ≤ 1%
Value at Tc = 25°C
STch = 25°C, Tch ≤ 150°C
Limited by maximum safe operation area
R07DS0421EJ0100 Rev.1.00
May 31, 2011
Page 1 of 6
RJK5012DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
500
—
—
3.0
—
Typ
—
—
—
—
0.515
Max
—
1
±0.1
4.5
0.620
Unit
V
μA
μA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
1100
120
15
30
23
77
16
29
5.5
13
0.89
—
—
—
—
—
—
—
—
—
—
1.50
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
280
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 10 V Note5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 41.6 Ω
Rg = 10 Ω
VDD = 400 V
VGS = 10 V
ID = 12 A
IF = 12 A, VGS = 0 Note5
IF = 12 A, VGS = 0
diF/dt = 100 A/μs
Notes: 5. Pulse test
R07DS0421EJ0100 Rev.1.00
May 31, 2011
Page 2 of 6
RJK5012DPP-M0
Preliminary
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
10
Drain Current ID (A)
Channel Dissipation Pch (W)
40
30
20
10
10
=
10
0
μs
μs
1
Operation in this
area is limited by
RDS(on)
0.1
0.01
Tc = 25°C
1 shot
0
0
50
100
150
0.001
0.1
200
1
1000
100
10
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
20
100
6V
7V
16
VDS = 10 V
Pulse Test
5.8 V
10 V
5.6 V
12
5.4 V
8
5.2 V
VGS = 5 V
4
Drain Current ID (A)
Ta = 25°C
Pulse Test
Drain Current ID (A)
PW
10
1
Tc = 75°C
25°C
−25°C
4
8
12
16
0
20
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1
0.3
VGS = 10 V
Ta = 25°C
Pulse Test
0.1
1
10
Drain Current ID (A)
R07DS0421EJ0100 Rev.1.00
May 31, 2011
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source on State Resistance
RDS(on) (Ω)
0
0.1
2.0
VGS = 10 V
Pulse Test
1.6
1.2
ID = 12 A
3A
0.8
6A
0.4
0
−25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 3 of 6
RJK5012DPP-M0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time (Typical)
10000
VGS = 0
f = 1 MHz
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
100
100
Coss
10
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
1
10
Ta = 25°C
IDR (A)
4
VDD = 400 V
250 V
100 V
8
16
0
24
Gate Charge
32
40
Qg (nC)
IDR (A)
8
300
VDS (V)
20
Reverse Drain Current
12
VDS
200
0
16
VGS (V)
VDD = 100 V
250 V
400 V
600
400
VGS
200
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
ID = 12 A
Ta = 25°C
100
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
800
Crss
1
0
100
Reverse Drain Current
Ciss
1000
Ta = 25°C
Pulse Test
16
12
10 V
8
5V
4
VGS = 0 V, −5 V
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage
VGS(off) (V)
5
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
VDS = 10 V
0
-25 0
25
50
75
Case Temperature
R07DS0421EJ0100 Rev.1.00
May 31, 2011
100 125 150
Tc (°C)
Page 4 of 6
RJK5012DPP-M0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
TC = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θch–c(t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D = PW
T
PW
T
e
uls
tP
0.01
ho
1S
0.001
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 250 V
Vin
Vout
10%
10%
10%
90%
td(on)
R07DS0421EJ0100 Rev.1.00
May 31, 2011
tr
90%
td(off)
tf
Page 5 of 6
RJK5012DPP-M0
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
RJK5012DPP-M0-T2
R07DS0421EJ0100 Rev.1.00
May 31, 2011
Quantity
600 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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