Product Data Sheet SAW9C72A – Acrich MJT 3030 Superior High Intensity for High Voltage System Acrich MJT – 3030 series SAW9C72A LM-80 RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size : 3.0x3.0x0.65mm • The MJT series of LEDs are designed for AC & DC(High Voltage) operation and high Intensity output applications • • • • • • • The MJT is ideal light sources for general illumination applications and custom designed solutions • High Intensity output and high luminance Designed for high voltage operation Compact size package SMT solderable High Color Quality with CRI Min.90(R9>50) RoHS compliant Key Applications • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability General lighting Replacement lamps Architectural Commercial Table 1. Product Selection Table CCT Part Number Color Min. Typ. Max. SAW9C72A Neutral White 3700K 4200K 4700K SAW9C72A Warm White 2600K 3000K 3700K Rev1.0, July 7, 2015 1 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 4 • Color Bin Structure 10 • Mechanical Dimensions 17 • Recommended Solder Pad 18 • Reflow Soldering Characteristics 19 • Emitter Tape & Reel Packaging 20 • Product Nomenclature 22 • Handling of Silicone Resin for LEDs 23 • Precaution For Use 24 • Company Information 27 Rev1.0, July 7, 2015 2 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Performance Characteristics Table 2. Characteristics, IF=40mA, Tj= 25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 40 60 mA Forward Voltage VF 21.5 - 24.5 V Luminous Intensity[1] (2700K)[2] Iv - 28.5 (88) - cd (lm) CRI [3] Ra 90 - - 2Θ1/2 - 120 - Deg. RθJ-S - 9 - ℃/W Viewing Angle Thermal resistance (J to S) [4] ESD Sensitivity(HBM) - Class 3A JESD22-A114-E Table 3. Absolute Maximum Ratings Parameter Symbol Value Unit Forward Current IF 60 mA IFP 90 mA Power Dissipation PD 1.5 W Junction Temperature Tj 125 ºC Operating Temperature Topr -30 ~ + 100 ºC Storage Temperature Tstg -40 ~ + 100 ºC Pulse Forward Current [5] Notes : (1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. (2) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.01, CCT 5% tolerance. (3) Tolerance is 2.0 on CRI measurements. (4) Thermal resistance: RthJS (Junction to Solder) (5) IFP conditions with pulse width ≤10ms and duty cycle ≤10% • Calculated performance values are for reference only. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. • All measurements were made under the standardized environment of Seoul Semiconductor. Rev1.0, July 7, 2015 3 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Relative Emission Intensity (a.u.) Fig 1. Color Spectrum, Tj = 25ºC, IF=40mA 3700~4700K 2600~3700K 1.0 0.5 0.0 400 500 600 700 800 Wavelength [nm] Fig 2. Radiant Pattern, Tj = 25ºC, IF=40mA Relative Intensity (%) 100 80 60 40 20 0 -100 -75 -50 -25 0 25 50 75 100 Angle [Degree] Rev1.0, July 7, 2015 4 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, T j = 25ºC 0.06 Forward Current [A] 0.05 0.04 0.03 0.02 0.01 0.00 0 5 10 15 20 25 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Intensity, Tj = 25ºC Relative Luminous Intensity [a.u.] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 Forward Current [mA] Rev1.0, July 7, 2015 5 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Fig 5. Forward Current vs. CIE X,Y Shift, T j = 25ºC (3700~4700K) 0.388 0.387 20mA CIE Y 0.386 10mA 30mA 40mA 50mA 0.385 60mA 0.384 0.383 0.382 0.382 0.383 0.384 0.385 0.386 0.387 0.388 CIE X (2600~3700K) 0.416 CIE Y 0.414 0.412 30mA 20mA 10mA 40mA 50mA 60mA 0.410 0.408 0.406 0.448 0.450 0.452 0.454 0.456 0.458 CIE X Rev1.0, July 7, 2015 6 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Relative Luminous Intensity [a.u.] Fig 6. Junction Temperature vs. Relative Luminous Intensity, IF=40mA 1.0 0.8 0.6 0.4 0.2 0.0 25 45 65 85 105 125 O Junction Temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage, IF=40mA Relative Forward Voltage 1.0 0.8 0.6 0.4 0.2 0.0 25 45 65 85 105 125 O Junction Temperature Tj( C) Rev1.0, July 7, 2015 7 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Fig 8. Chromaticity Coordinate vs. Junction Temperature, IF=40mA (3700~4700K) 0.390 CIE Y 0.388 o 25 C o 0.386 50 C o 75 C 0.384 o 100 C o 125 C 0.382 0.380 0.380 0.382 0.384 0.386 0.388 CIE X (2600~3700K) 0.422 CIE Y 0.420 o 25 C o 0.418 50 C o 75 C 0.416 o 100 C o 125 C 0.414 0.412 0.452 0.454 0.456 0.458 0.460 CIE X Rev1.0, July 7, 2015 8 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Characteristics Graph Fig 9. Ambient Temperature vs. Maximum Forward Current, T j_max = 125℃ Forward Current [mA] 60 40 Rth(j-a) = 40K/W Rth(j-a) = 50K/W Rth(j-a) = 60K/W 20 0 0 20 40 60 80 100 120 O Ambient Temperature Ta [ C] Rev1.0, July 7, 2015 9 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure Table 4. Bin Code description, Tj=25℃, IF=40mA Part Number SAW9C72A Luminous Flux (lm) [1] Luminous Intensity (cd) [2] Bin Code Min. Max. Min. Max. K26 80 85 25.9 27.5 K28 85 90 27.5 29.2 K29 90 95 29.2 30.8 L31 95 101 30.8 32.7 L33 101 107 32.7 34.7 Color Chromaticity Coordinate Refer to Page. 12~16 Typical Forward Voltage (V) Bin Code Min. Max. D1 21.5 22.5 D2 22.5 23.5 D3 23.5 24.5 - - - Table 5. Intensity rank distribution Available ranks CCT CIE IV Rank 4200 ~ 4700K D K26 K28 K29 L31 L33 3700 ~ 4200K E K26 K28 K29 L31 L33 3200 ~ 3700K F K26 K28 K29 L31 L33 2900 ~ 3200K G K26 K28 K29 L31 L33 2600 ~ 2900K H K26 K28 K29 L31 L33 *Notes : (1) Calculated performance values are for reference only. (2) Luminous Intensity values are based on CCT 2700K. •All measurements were made under the standardized environment of Seoul Semiconductor. In order to ensure availability, single color rank will not be orderable. Rev1.0, July 7, 2015 10 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram Tj=25℃, IF=40mA 0.46 0.44 0.42 G CIE coord.(Y) 0.40 H F E 0.38 D 0.36 0.34 0.32 0.30 MACADAM 3STEP Rank 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE coord.(X) *Notes : • Energy Star binning applied to all 2600~4700K. • Measurement Uncertainty of the Color Coordinates : ± 0.01 Rev1.0, July 7, 2015 11 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram (Neutral white), Tj=25℃, IF=40mA 4200K 0.39 4500K 0.38 4700K CIE Y D41 D31 D21 D42 D11 0.37 D32 D22 D12 D43 D33 D23 0.36 D13 D44 D34 D24 D14 0.35 0.34 0.350 0.355 0.360 0.365 0.370 0.375 CIE X D11 D21 D31 D41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3548 0.3736 0.3595 0.3770 0.3641 0.3804 0.3689 0.3839 0.3539 0.3668 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3720 0.3800 0.3770 0.3641 0.3804 0.3689 0.3839 0.3736 0.3595 D12 D22 D32 0.3874 D42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3539 0.3668 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3530 0.3601 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3703 0.3726 0.3584 0.3701 0.3628 0.3733 0.3674 0.3767 0.3720 0.3800 D13 D23 D33 D43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3530 0.3601 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3520 0.3533 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3687 0.3652 0.3573 0.3632 0.3616 0.3663 0.3659 0.3694 0.3703 0.3726 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3520 0.3533 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3511 0.3465 0.3551 0.3493 0.3590 0.3521 0.3630 0.3550 0.3551 0.3493 0.3590 0.3521 0.3630 0.3550 0.3670 0.3578 0.3562 0.3562 0.3603 0.3592 0.3645 0.3622 0.3687 0.3652 D14 D24 Rev1.0, July 7, 2015 D34 12 D44 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram (Neutral white), Tj=25℃, IF=40mA 0.41 3700K 0.40 E41 4000K E31 4200K 0.39 E42 E21 E32 CIE Y E11 E22 0.38 E12 E43 E33 E23 E13 0.37 E44 E34 E24 E14 0.36 0.35 0.36 0.37 0.38 0.39 0.40 CIE X E11 E21 E31 E41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3736 0.3874 0.3804 0.3917 0.3871 0.3959 0.3939 0.4002 0.3720 0.3800 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3979 0.3962 0.3917 0.3871 0.3959 0.3939 0.4002 0.4006 0.3804 E12 E22 E32 0.4044 E42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3720 0.3800 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3703 0.3726 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3952 0.3880 0.3784 0.3841 0.3849 0.3881 0.3914 0.3922 0.3979 0.3962 E13 E23 E33 E43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3703 0.3726 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3687 0.3652 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3925 0.3798 0.3765 0.3765 0.3828 0.3803 0.3890 0.3842 0.3952 0.3880 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3687 0.3652 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3670 0.3578 0.3727 0.3613 0.3784 0.3647 0.3841 0.3682 0.3727 0.3613 0.3784 0.3647 0.3841 0.3682 0.3898 0.3716 0.3746 0.3689 0.3806 0.3725 0.3865 0.3762 0.3925 0.3798 E14 E24 Rev1.0, July 7, 2015 E34 13 E44 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=40mA 0.42 3200K 3500K 0.41 3700K CIE Y 0.40 F21 F11 F42 F32 F22 F43 F12 0.39 F41 F31 F33 F23 F44 F13 F34 0.38 F24 F14 0.37 0.39 0.40 0.41 0.42 0.43 CIE X F11 F21 F31 F41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3996 0.4015 0.4071 0.4052 0.4146 0.4089 0.4223 0.4127 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 0.4052 0.4146 0.4089 0.4223 0.4127 0.4299 0.4071 F12 F22 F32 0.4165 F42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 F13 F23 F33 F43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3889 0.3690 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.4147 0.3814 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 F14 F24 Rev1.0, July 7, 2015 F34 14 F44 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=40mA 0.43 2900K 3000K 3200K 0.42 G41 G31 G21 G11 G42 CIE Y 0.41 G32 G22 G12 G43 0.40 G23 G33 G13 0.39 G14 G24 G44 G34 0.38 0.41 0.42 0.43 0.44 0.45 0.46 CIE X G11 G21 G31 G41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4299 0.4165 0.4364 0.4188 0.4430 0.4212 0.4496 0.4236 0.4261 0.4077 0.4324 0.4099 0.4387 0.4122 0.4451 0.4145 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4514 0.4168 0.4189 0.4430 0.4212 0.4496 0.4236 0.4562 0.4365 G12 G22 G32 0.4260 G42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4261 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4515 0.4168 G13 G23 G33 G43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4185 0.3902 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4420 0.3985 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4243 0.3922 0.4302 0.3943 0.4302 0.3943 0.4361 0.3964 0.4203 0.3834 0.4259 0.3853 0.4259 0.3853 0.4316 0.3873 0.4147 0.3814 0.4203 0.3834 0.4316 0.3873 0.4373 0.3893 0.4185 0.3902 0.4243 0.3922 0.4361 0.3964 0.4420 0.3985 G14 G24 Rev1.0, July 7, 2015 G34 15 G44 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj=25℃, IF=40mA 0.44 0.43 2900K CIE Y H21 H11 0.42 H13 H24 H34 H41 H31 H42 H43 H33 H23 0.40 H14 H32 H22 H12 0.41 2600K 2700K H44 0.39 0.38 0.43 0.44 0.45 0.46 0.47 0.48 CIE X H11 H21 H31 H41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4562 0.4260 0.4625 0.4275 0.4687 0.4289 0.4750 0.4304 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 0.4275 0.4687 0.4289 0.4750 0.4304 0.4810 0.4625 H12 H22 H32 0.4319 H42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 H13 H23 H33 H43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4373 0.3893 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4593 0.3944 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 H14 H24 Rev1.0, July 7, 2015 H34 16 H44 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Mechanical Dimensions Bottom View Top View Cathode Cathode Mark (-) Side View Circuit Cathode Anode 1 2 ESD Protection Device Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev1.0, July 7, 2015 17 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only (4) Undefined tolerance is ±0.1mm (5) The appearance and specifications of the product may be changed for improvement without notice. Rev1.0, July 7, 2015 18 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 6. Reflow Soldering Characteristics Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Ts_max to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Ts_min) - Temperature Max (Ts_max) - Time (Ts_min to Ts_max) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution : (1) Reflow soldering is recommended not to be done more than two times In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev1.0, July 7, 2015 19 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Emitter Tape & Reel Packaging ( Tolerance: ±0.2, Unit: mm ) Notes : (1) Quantity : Max 4,500pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev1.0, July 7, 2015 20 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev1.0, July 7, 2015 21 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Product Nomenclature Table 7. Part Numbering System : X1X2X3X4X5X6X7X8 Part Number Code Description Part Number Value X1 Company S SSC X2 Top View LED series A Acrich X3 Color Specification W9 CRI 90 X4 Package series C 3030 Series X5X6 Characteristic code 72 X7 Revision A Table 8. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev1.0, July 7, 2015 Lot Number 22 Value www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev1.0, July 7, 2015 23 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant. The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. Rev1.0, July 7, 2015 24 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Precaution for Use (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) Attaching LEDs, do not use adhesives that outgas organic vapor. (15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (16) Similar to most Solid state devices; LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.0, July 7, 2015 25 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.0, July 7, 2015 26 www.seoulsemicon.com Product Data Sheet SAW9C72A – Acrich MJT 3030 Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, July 7, 2015 27 www.seoulsemicon.com