Product Data Sheet STW9B12G – Mid-Power LED Achieving the best system cost in Mid/High Power Mid-Power LED – 3020 Series STW9B12G (Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size : 3.0x2.0x0.6mm • It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. • • • • • • • The die is attached within the reflector cavity and the cavity is encapsulated by silicone. • Thermally Enhanced Package Design Mid Power to High Power up to 0.12W Max. Driving Current 40mA Compact Package Size High Color Quality with CRI Min. 90 RoHS Compliant Key Applications • • • • The package design coupled with careful selection of component materials allow these products to perform with high reliability. Interior lighting General lighting Indoor and Outdoor displays Architectural and Decorative lighting Table 1. Product Selection Table CCT Part Number STW9B12G Rev1.0, May 9, 2014 Color Min. Typ. Max. Warm White 2600K 3000K 3700K 1 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Table of Contents Index • Product Brief • Table of Contents • Performance Characteristics • Color Bin Structure • Packaging Information • Product Nomenclature (Labeling Information) • Recommended Solder Pad • Reflow Soldering Characteristics • Handling of Silicone Resin for LEDs • Precaution For Use • Company Information Rev1.0, May 9, 2014 2 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Performance Characteristics Table 2. Product Selection Guide, IF=30mA , Ta=25ºC, RH30% Part Number CCT (K) [1] RANK Typ. 3500 STW9B12G 3000 2700 Luminous Intensity [2] IV (cd) Luminous Flux [3] ФV (lm) CRI Ra Min Max Min Max Min. K0 2.0 2.5 6.0 7.5 90 K5 2.5 3.0 7.5 9.0 90 L0 3.0 3.5 9.0 10.5 90 K0 2.0 2.5 6.0 7.5 90 K5 2.5 3.0 7.5 9.0 90 L0 3.0 3.5 9.0 10.5 90 K0 2.0 2.5 6.0 7.5 90 K5 2.5 3.0 7.5 9.0 90 L0 3.0 3.5 9.0 10.5 90 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.007 (2) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. (3) Calculated performance values are for reference only. Rev1.0, May 9, 2014 3 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Performance Characteristics Table 3. Characteristics, IF=30mA , Ta=25ºC, RH30% Value Parameter Symbol Unit Min. Typ. Max. 30 40 mA 3.3 V - cd (lm) Forward Current IF - Forward Voltage VF (30mA) 2.9 Luminous Intensity (2,600~4,200 K) Iv (30mA) - 2.6 (7.8lm) Ra 90 - Color Rendering Index Viewing Angle [1] [2] 2Θ1/2 - 120 Power Dissipation Pd - 132 mW Junction Temperature 써 - - 125 ºC Operating Temperature Topr - 40 - + 85 ºC Storage Temperature Tstg - 40 - + 100 ºC Thermal resistance (J to S) [3] RθJ-S - 28 - ℃/W Notes : (1) Tolerance is 2.0 on CRI measurements. (2) 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity (3) Thermal resistance: RthJS (Junction to Solder) • • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. All measurements were made under the standardized environment of Seoul Semiconductor. Rev1.0, May 9, 2014 4 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Relative Spectral Distribution Fig 1. Color Spectrum, Ta=25℃, RH30% IF=30mA Relative Emission Intensity 1.0 0.5 0.0 400 500 600 700 800 Wavelength [nm] Fig 2. Viewing Angle Distribution IF=30mA 0 1.01.0 30 0.80.8 0.60.6 60 0.40.4 0.20.2 0.00.0 -90 90 -60 0 -30 0.2 0.4 0.6 0.8 1.0 Rev1.0, May 9, 2014 5 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Forward Current Characteristics Fig 3. Forward Voltage vs. Forward Current , T a=25℃ Forward Current(mA) 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux, T a=25℃ Relative Luminous Intensity 1.5 1.0 0.5 0.0 0 10 20 30 40 Forward Current IF [mA] Rev1.0, May 9, 2014 6 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Forward Current Characteristics Fig 5. Forward Current vs. CIE X, Y Shift , T a=25℃ (2600K~3700K) 0.422 10mA y 20mA 30mA 0.420 40mA 0.418 0.464 0.465 0.466 0.467 x Rev1.0, May 9, 2014 7 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Junction Temperature Characteristics Fig 6. Relative Light Output vs. Junction Temperature IF=30mA Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) Fig 7. Junction Temperature vs. Relative Forward Voltage IF=30mA Relative Forward Voltage 1.0 0.8 0.6 0.4 0.2 0.0 30 45 60 75 90 105 120 O Junction temperature Tj( C) Rev1.0, May 9, 2014 8 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Junction Temperature Characteristics Fig 8. Chromaticity Coordinate vs. Junction Temperature IF=30mA (2600K~3700K) 0.412 0.410 25 y 0.408 50 0.406 75 0.404 100 0.402 125 0.400 0.451 0.452 0.453 0.454 x Rev1.0, May 9, 2014 9 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Ambient Temperature Characteristics Fig 9. Maximum Forward Current vs. Ambient Temperature 40 Forward Current IF [mA] o RthJ-A = 400 C/W 30 20 10 0 -40 -20 0 20 40 60 80 100 o Ambient Temperature Ta [ C] Rev1.0, May 9, 2014 10 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Color Bin Structure Table 4. Bin Code description Luminous Intensity (cd) @ IF=30mA Part Number Bin Code Min. Max. K0 2.0 2.5 K5 2.5 3.0 Typical Forward Voltage (VF) @ IF=30mA Color Chromaticity Coordinate @ IF=30mA STW9B12G Bin Code Min. Max. Y2 2.8 2.9 Y3 2.9 3.0 Z1 3.0 3.1 Z2 3.1 3.2 Refer to page.14 L0 3.0 3.5 Available Ranks Table 5. Intensity rank distribution CCT CIE IV Rank 3200~3700 K F K0 K5 L0 2900~3200 K G K0 K5 L0 2600~2900 K H K0 K5 L0 Notes : (1) All measurements were made under the standardized environment of Seoul Semiconductor. (2) Seoul Semiconductor sorts the LED package according to the luminous intensity IV. (3) The lumen table is only for reference. Rev1.0, May 9, 2014 11 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Color Bin Structure Fig 10. CIE Chromaticity Diagram Ta=25℃, IF=30mA 0.44 CIE coord.(Y) 0.42 H G 0.40 F 0.38 0.36 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 CIE coord.(X) (1) Energy Star binning applied to all 2600~3700K. (2) Measurement Uncertainty of the Color Coordinates : ± 0.007 Rev1.0, May 9, 2014 12 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Color Bin Structure <IF=30mA, Ta=25℃> 0.42 3200K 3500K 0.41 3700K CIE Y 0.40 F21 F11 F42 F32 F22 F43 F12 0.39 F41 F31 F33 F23 F44 F13 F34 0.38 F24 F14 0.37 0.39 0.40 0.41 0.42 0.43 CIE X F11 F21 F31 F41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3996 0.4015 0.4071 0.4052 0.4146 0.4089 0.4223 0.4127 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 0.4052 0.4146 0.4089 0.4223 0.4127 0.4299 0.4071 F12 F22 F32 0.4165 F42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3969 0.3934 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 0.4042 0.3969 0.4114 0.4005 0.4187 0.4041 0.4261 0.4077 F13 F23 F33 F43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3943 0.3853 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 0.4012 0.3886 0.4082 0.3920 0.4152 0.3955 0.4223 0.3990 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.3916 0.3771 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.3889 0.3690 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.3953 0.3721 0.4017 0.3751 0.4082 0.3783 0.4147 0.3814 0.3983 0.3803 0.4049 0.3836 0.4117 0.3869 0.4185 0.3902 F14 F24 Rev1.0, May 9, 2014 F34 13 F44 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Color Bin Structure <IF=30mA, Ta=25℃> 0.43 2900K 3000K 3200K 0.42 G41 G31 G21 G11 G42 CIE Y 0.41 G32 G22 G12 G43 0.40 G23 G33 G13 0.39 G14 G24 G44 G34 0.38 0.41 0.42 0.43 0.44 0.45 0.46 CIE X G11 G21 G31 G41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4299 0.4165 0.4364 0.4188 0.4430 0.4212 0.4496 0.4236 0.4261 0.4077 0.4324 0.4099 0.4387 0.4122 0.4451 0.4145 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4514 0.4168 0.4189 0.4430 0.4212 0.4496 0.4236 0.4562 0.4365 G12 G22 G32 0.4260 G42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4261 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 0.4324 0.4100 0.4387 0.4122 0.4451 0.4145 0.4515 0.4168 G13 G23 G33 G43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4223 0.3990 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4185 0.3902 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4243 0.3922 0.4302 0.3943 0.4361 0.3964 0.4420 0.3985 0.4284 0.4011 0.4345 0.4033 0.4406 0.4055 0.4468 0.4077 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4243 0.3922 0.4302 0.3943 0.4302 0.3943 0.4361 0.3964 0.4203 0.3834 0.4259 0.3853 0.4259 0.3853 0.4316 0.3873 0.4147 0.3814 0.4203 0.3834 0.4316 0.3873 0.4373 0.3893 0.4185 0.3902 0.4243 0.3922 0.4361 0.3964 0.4420 0.3985 G14 G24 Rev1.0, May 9, 2014 G34 14 G44 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Color Bin Structure <IF=30mA, Ta=25℃> 0.44 0.43 2900K CIE Y H21 H11 0.42 H13 H24 H34 H41 H31 H42 H43 H33 H23 0.40 H14 H32 H22 H12 0.41 2600K 2700K H44 0.39 0.38 0.43 0.44 0.45 0.46 0.47 0.48 CIE X H11 H21 H31 H41 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4562 0.4260 0.4625 0.4275 0.4687 0.4289 0.4750 0.4304 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 0.4275 0.4687 0.4289 0.4750 0.4304 0.4810 0.4625 H12 H22 H32 0.4319 H42 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4515 0.4168 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 0.4575 0.4182 0.4636 0.4197 0.4697 0.4211 0.4758 0.4225 H13 H23 H33 H43 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4468 0.4077 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 0.4526 0.4090 0.4585 0.4104 0.4644 0.4118 0.4703 0.4132 CIE X CIE Y CIE X CIE Y CIE X CIE Y CIE X CIE Y 0.4420 0.3985 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4373 0.3893 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4428 0.3906 0.4483 0.3919 0.4538 0.3932 0.4593 0.3944 0.4477 0.3998 0.4534 0.4012 0.4591 0.4025 0.4648 0.4038 H14 H24 Rev1.0, May 9, 2014 H34 15 H44 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Mechanical Dimensions Package Marking Side View Top View Bottom View Circuit Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev1.0, May 9, 2014 16 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Reel Packaging ( Tolerance: ±0.2, Unit: mm ) (1) Quantity : Max 4,000pcs/Reel (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10˚ to the carrier tape. (4) Package : P/N, Manufacturing data Code No. and Quantity to be indicated on a damp proof Package. Rev1.0, May 9, 2014 17 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev1.0, May 9, 2014 18 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Emitter Tape & Reel Packaging Table 6. Part Numbering System : X1X2X3X4X5X6X7 Part Number Code Description Part Number Value X1 Company S X2 Top View LED series T X3 Color Specification W9 CRI 90 X4 Package series B B series X5X6 Characteristic code 12 X7 Revision G Table 7. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev1.0, May 9, 2014 Lot Number 19 Value www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Recommended Solder Pad [Recommended Solder Pattern] Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only (4) Undefined tolerance is ±0.1mm Rev1.0, May 9, 2014 20 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 8. Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev1.0, May 9, 2014 21 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this. product with acid or sulfur material in sealed space. Rev1.0, May 9, 2014 22 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMT techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing - Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from SSC, a sealed container with a nitrogen atmosphere should be used for storage. (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) Attaching LEDs, do not use adhesives that outgas organic vapor. (15) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. Rev1.0, May 9, 2014 23 www.seoulsemicon.com Product Data Sheet STW9B12G – Mid-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, May 9, 2014 24 www.seoulsemicon.com