RB481K Diodes Schottky Barrier Diode RB481K !External dimensions (Units: mm) !Applications Low current rectification 1.25±0.1 0.6 0.3±0.1 !Features 1) Compact size. 2) High reliability. 3) Extremely low forward voltage. 4) This is a composite component and is ideal for reducing the number of components used. 0.65 0.2±0.1 0.9±0.1 0.7 2.1±0.1 1.25±0.1 (1) (4) 0~0.1 3 U 0.65 0.65 0.15±0.05 1.25±0.1 0.1Min. (2) (3) 0.2±0.1 0.2±0.1 2.0±0.2 (1) (4) (2) (3) !Construction Silicon epitaxial planar ROHM : UMD4 EIAJ : SC - 82 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 30 V DC reverse voltage VR 30 V IO 0.2 A IFSM 1 A Mean rectifying current Peak forward surge current∗ Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C ∗ 60 Hz for 1 !Electrical characteristics (Ta=25°C unless otherwise noted) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. Unit VF1 − 0.18 0.28 V IF=1mA Conditions VF2 − 0.25 0.33 V IF=10mA VF3 − 0.34 0.43 V IF=100mA VF4 − 0.40 0.50 V IF=200mA IR − 3.6 30 µA VR=10V RB481K Diodes !Electrical characteristic curves (Ta=25°C) 1 CAPACITANCE BETWEEN TERMINALS : CT (pF) 10m ˚C −2 5˚ C 1m 25 12 75 5˚ 10m ˚C C REVERSE CURRENT : IR (A) 100m Ta = FORWARD CURRENT : IF (A) Ta=125˚C 100µ 10µ 1µ 0 0.1 0.2 0.3 0.4 0.5 0.6 1m 75˚C 100µ 25˚C 10µ 1µ −25˚C 100n 10n 0 10 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward temperature characteristic Fig. 2 Reverse temperature characteristic 30 100 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR (V) Fig. 3 Capacitance between terminals characteristic 35