4.25 Gbps, 3.3 V Low Noise, Transimpedance Amplifier ADN2882 Data Sheet FEATURES GENERAL DESCRIPTION Bandwidth: 3.5 GHz Input noise current density: 8 pA/√Hz Optical sensitivity −22.0 dBm1 −20.4 dBm2 Differential transimpedance: 3700 V/A Power dissipation: 80 mW Differential output swing: 260 mV p-p Input overload current: 5.6 mA p-p On-chip RSSI function Low frequency cutoff: 12 kHz On-chip PD filter: RF = 200 Ω, CF = 20 pF Die size: 0.7 mm × 1.2 mm The ADN2882 is a 3.3 V high gain SiGe transimpedance amplifier (TIA) which converts the small signal current of a photo detector to a large differential voltage output. The ADN2882 features a typical 475 nA input-referred noise, enabling an optical sensitivity of −22 dBm (0.85 A/W PIN). With a bandwidth of 3.5 GHz, the ADN2882 allows a data rate operation up to 4.25 Gbps. Typical power dissipation is 80 mW. To facilitate the assembly in small form factor packages, such as TO-46 headers, the ADN2882 provides an on-chip RC filter (200 Ω, 20 pF) and features a 12 kHz low frequency cutoff without using an external capacitor. An on-chip RSSI circuit, which generates a voltage proportional to the average photodiode current, is available for power monitoring and assembly alignment. APPLICATIONS The ADN2882 is available in die form. With a chip area of 1.2 mm × 0.7 mm, the TIA layout is optimized for TO-Canbased packages. 4.25 Gbps optical receivers GbE/FC optical receivers SFF-8472-compliant receivers PIN/APD-TIA receiver optical subassemblies 1 2 Based on 1550 nm PIN, CD = 0.5 ± 0.10 pF, responsivity = 0.85 A/W, ER = 9 dB, PRBS 231 − 1 at 4.25 Gbps, BER < 10−12. Calculated result based on an 850 nm PIN, CD = 0.5 ± 0.15 pF, responsivity = 0.48 A/W, ER = 9 dB, at 4.25 Gbps, BER < 10−12. FUNCTIONAL BLOCK DIAGRAM 3.3V VCCFILTER VCC 200Ω 50Ω 50Ω 1100Ω FILTER OUT OUTB IN 20pF 0.85V 5mA GND GND CAP 04946-001 RSSI Figure 1. Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2005–2014 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADN2882 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Layout and Function Descriptions ...........................................5 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................6 General Description ......................................................................... 1 5-Pin TO-46 Assembly Recommendations ...................................9 Functional Block Diagram .............................................................. 1 4-Pin TO-46 Assembly Recommendations ................................ 11 Revision History ............................................................................... 2 Outline Dimensions ....................................................................... 12 Specifications..................................................................................... 3 Die Information .......................................................................... 12 Absolute Maximum Ratings ............................................................ 4 Ordering Guide .......................................................................... 12 ESD Caution .................................................................................. 4 REVISION HISTORY 9/14—Rev. 0 to Rev. A Changes to Figure 19 ........................................................................ 9 Changes to Figure 22 ...................................................................... 10 Changes to Ordering Guide .......................................................... 12 6/05—Revision 0: Initial Version Rev. A | Page 2 of 12 Data Sheet ADN2882 SPECIFICATIONS Minimum/maximum VCC = 3.3 V ± 0.3 V, TAMBIENT = −40°C to +95°C; typical VCC = 3.3 V, TAMBIENT = 25°C, unless otherwise noted. Table 1. Parameter DYNAMIC PERFORMANCE Bandwidth (BW)1 Total Input Referred RMS Noise (IRMS) Small Signal Transimpedance (ZT)1 Low Frequency Cutoff Output Return Loss Input Overload Current Maximum Differential Output Swing Output Data Transition Time PSRR Group Delay Variation Transimpedance Ripple Deterministic Jitter Linear Output Range Linear Input Current Range DC PERFORMANCE Power Dissipation Input Voltage Output Common-Mode Voltage Output Impedance PD Filter Resistance PD Filter Capacitance RSSI Gain RSSI Offset RSSI Accuracy 1 Conditions Min Typ −3 dB CD = 0.5 pF, 4.0 GHz low-pass filter 100 MHz, differential 100 MHz, single-ended IIN = 20 μA, CAP open IIN = 500 μA, CAP open DC to 4.0 GHz, differential ER = 10 dB IIN, P-P = 2.0 mA IIN, P-P = 1.0 mA; 20% to 80% rise/fall time IIN = 0 mA, 1 MHz < frequency <10 MHz 1.0 GHz to 4.0 GHz 50 MHz to 1.0 GHz, single-ended 10 μA < IIN, P-P ≤ 100 μA, K28.5 @ 4.25 Gbps 100 μA < IIN, P-P ≤ 1.0 mA, K28.5 @ 4.25 Gbps Differential output, <1 dB compression Single-ended input, <1 dB compression 2.9 3.5 475 3700 1850 12 84 −25 5.6 260 46 40 ±12 0.5 8 15 190 45 IIN, AVE = 0 Compliance voltage DC (50 Ω) terminated to VCC Single-ended RF CF IIN, AVE = 5 μA to 1 mA IIN, AVE = 10 μA 5 μA < IIN, P-P ≤ 20 μA 20 μA < IIN, P-P ≤ 1 mA A signal current equivalent to IIN P-P = 10 μA is applied to the TIA input. No input capacitor is applied. Rev. A | Page 3 of 12 2800 1400 3.5 170 80 0.85 VCC − 0.12 50 200 20 0.83 4.6 ±9 ±3 Max 605 4800 2400 375 110 Unit GHz nA V/A V/A kHz kHz dB mA p-p mV p-p ps dB ps dB ps p-p ps p-p mV p-p μA p-p mW V V Ω Ω pF V/mA mV % % ADN2882 Data Sheet ABSOLUTE MAXIMUM RATINGS Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Parameter Supply Voltage (VCC to GND) Maximum Voltage to All Input and Output Signal Pins Minimum Voltage to All Input and Output Signal Pins Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<30 sec) Rating 5V VCC + 0.4 V GND − 0.4 V 10 mA −65°C to +125°C −40°C to +95°C 125°C 410°C ESD CAUTION Rev. A | Page 4 of 12 Data Sheet ADN2882 PIN LAYOUT AND FUNCTION DESCRIPTIONS 1 IN 2 TEST 3 FILTER 4 FILTER 5 VCC VCCFILTER GND 17 16 15 14 6 7 8 9 GND RSSI CAP GND 13 GND 12 OUT 11 OUTB 10 GND 04946-002 GND VCC Figure 2. Pad Layout Table 3. Pad Function Descriptions Pad No. Mnemonic Pin Type1 Description 1 2 3 4 5 6 7 8 GND IN TEST FILTER FILTER GND RSSI CAP P AI AI AO AO P AO AI 9 10 11 12 13 14 15 GND GND OUTB OUT GND GND VCCFILTER P P AO AO P P P 16 VCC P 17 VCC P Ground. (Input return.) Current Input. Bond directly to a photodiode (PD) anode. Test Probe Pad. Do not connect. Filter Output. Pad 4 and Pad 5 are metal connected. Optional bond to a PD cathode. Filter Output. Pad 4 and Pad 5 are metal connected. Optional bond to a PD cathode. Ground. Voltage Output. Provides average input current monitoring. Leave it open, if not used. Leave This Pin Open for Non-SONET Applications. For SONET applications, see Figure 10 and contact sales for assembly details. Ground. (Output return.) Ground. (Output return.) Negative Output, CML, On-Chip 50 Ω Termination (AC or DC Termination). Positive Output, CML, On-Chip 50 Ω Termination (AC or DC Termination). Ground. (Output return.) Ground. (Output return.) On-Chip Filter Supply. Connect to VCC to Enable On-Chip RC Filter (200 Ω, 20 pF). Leave it open, if not used. 3.3 V Power Supply. Place a 200 pF, RF decoupling capacitor close to the power pad to reduce the power noise. 3.3 V Power Supply. Place a 200 pF, RF decoupling capacitor close to the power pad to reduce the power noise. 1 P = power; AI = analog input; and AO = analog output. Rev. A | Page 5 of 12 ADN2882 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 66 3.9 64 3.8 3.6V 62 BANDWIDTH (GHz) 3.7 58 56 54 3.6 3.3V 3.5 3.0V 3.4 3.3 52 1G FREQUENCY (Hz) 10G 3.2 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (°C) 04946-006 50 100M Figure 3. Single-Ended Transimpedance vs. Frequency Figure 6. Bandwidth vs. VCC and Temperature 3.9 100 3.6V 3.8 95 90 POWER DISSIPATION (mW) 3.3V 3.7 3.0V 3.6 TZ (kΩ) 04946-009 TZ (dB Ω) 60 3.5 3.4 3.3 3.6V 85 80 3.3V 75 70 65 3.0V 60 50 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (°C) Figure 4. Differential Transimpedance vs. VCC and Temperature 04946-010 04946-007 55 3.2 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (°C) Figure 7. Power Dissipation vs. VCC and Temperature 4.5 –20 –22 4.0 –24 –26 SDD22 (dB) 3.0 –28 –30 –32 2.5 –34 2.0 0 10 20 30 40 50 60 IINPP (µA) 70 80 90 100 –38 10M 100M 1G FREQUENCY (Hz) Figure 8. SDD22 vs. Frequency Up to 5 GHz, CAP = Open Figure 5. Differential Transimpedance vs. Input Current Rev. A | Page 6 of 12 10G 04946-011 –36 04946-008 TZ (kΩ) 3.5 Data Sheet ADN2882 100 25 80 20 70 60 VRSSI (mV) LOW FREQUENCY CUTOFF (kHz) 90 50 40 15 10 30 20 5 0 100 200 300 400 500 600 IIN (µA) 700 800 0 04946-012 0 900 1000 1100 0 Figure 9. Low Frequency Cutoff vs. Input Current (CAP = OPEN) 5 10 15 IIN (µA) 20 25 30 04946-015 10 Figure 12. RSSI Voltage Output vs. Input Current (0 µA to 30 µA) 16 700 10 8 6 4 2 0 1 10 100 1,000 EXTERNAL CAPACITANCE AT CAP (pF) 10,000 500 400 300 0 Figure 10. Low Frequency Cutoff vs. External Capacitance at CAP 0.2 0.4 0.6 0.8 PHOTODIODE CAPACITANCE CD (pF) 1.0 Figure 13. Input Referred Noise (DC to 4.0 GHz) vs. PD Capacitance 3000 540 520 INPUT REFERRED NOISE (nA) 2500 2000 1500 1000 500 500 480 460 440 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 IIN (µA) Figure 11. Full-Scale of RSSI Voltage Output vs. Input Current CD = 0.5pF 400 –50 0 50 TEMPERATURE (°C) Figure 14. Input Referred Noise vs. Temperature Rev. A | Page 7 of 12 100 04946-017 420 04946-013 VRSSI (mV) 600 04946-016 INPUT REFERRED RMS NOISE (nA) 12 04946-033 LOW FREQUENCY CUTOFF (kHz) 14 ADN2882 Data Sheet 20 100 18 DETERMINISTIC JITTER (pS) 16 GROUP DELAY (ps) 50 0 –50 14 12 25°C 10 –40°C 8 85°C 6 4 1 2 3 FREQUENCY (GHz) 4 5 04946-018 0 –100 Figure 15. Group Delay vs. Frequency 0.10 IIN AVERAGE (mA) 1.00 Figure 17. Deterministic Jitter vs. Input Current (K28.5 @ 4.25 Gbps) 04946-019 4.7mV/DIV 40ps/DIV OPTICAL POWER –21.8dBm 0.01 04945-026 2 Figure 16. Output Eye at 4.25 Gbps (1550 nm PD with Responsivity = 0.85 A/W, ER = 9 dB, PRBS 231 − 1, BER < 10−12) Rev. A | Page 8 of 12 Data Sheet ADN2882 5-PIN TO-46 ASSEMBLY RECOMMENDATIONS Contact sales for more details. VCC VPD ADN2882 PD CPD CB CPD CB 04946-003 04946-031 OUT OUTB Figure 19. Side View of the Assembly Figure 18. 5-Pin TO-46 with External Photodiode Supply VPD VCC B.W B.W. VCC CB VPD B.W. B.W. 200Ω CPD 50Ω 50Ω B.W. B.W. OUT FILTER OUTB B.W. B.W. IN 20pF 0.85V GND B.W. GND CAP B.W. 04946-027 RSSI Figure 20. Equivalent Circuit of Assembly Including Bond Wires Table 4. Bill of Materials (BOM) Notes Component PD TIA One mil thickness gold wire, ball bond recommended. CB CPD Description 1× vendor specific, 4.25 Gbps, photodiode 1× ADN2882 (0.7 mm × 1.2 mm), 4.25 Gbps, transimpedance amplifier 1× 200 pF, RF single-layer capacitor 1× 560 pF, RF single-layer capacitor Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires. Rev. A | Page 9 of 12 ADN2882 Data Sheet VCC RSSI ADN2882 PD SC CB SC CB OUTB 04946-023 04946-032 OUT Figure 22. Side View of the Assembly Figure 21. 5-Pin TO-46 with Internal PD Biasing and RSSI Output VCC B.W. B.W. CB B.W. VCCFILTER 200Ω VCC 50Ω 50Ω B.W. B.W. OUT FILTER B.W. B.W. OUTB IN 20pF 0.85V B.W. GND B.W. GND CAP B.W. 04946-028 RSSI Figure 23. Equivalent Circuit of the Assembly Including Bond Wires Table 5. Bill of Materials (BOM) Notes Component PD TIA One mil thickness gold wire, ball bond recommended. CB SC Description 1× vendor specific, 4.25 Gbps, photodiode 1× ADN2882 (0.7 mm × 1.2 mm), 4.25 Gbps, transimpedance amplifier 1× 200 pF, RF single-layer capacitor 1× ceramic standoff or 1× optional capacitor Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires. Rev. A | Page 10 of 12 Data Sheet ADN2882 4-PIN TO-46 ASSEMBLY RECOMMENDATIONS Contact sales for more details. VCC ADN2882 PD SC CB OUTB SC CB OUT 04946-004 04946-030 TO CAN HEADER Figure 25. Side View of the Assembly Figure 24. 4-Pin TO-46 with Internal PD Biasing VCC B.W. B.W. CB B.W. VCCFILTER 200 VCC 50 50 B.W. B.W. OUT FILTER B.W. B.W. OUTB IN 20pF 0.85V GND B.W. GND CAP B.W. 04946-029 RSSI Figure 26. Equivalent Circuit of Assembly Including Bond Wires Table 6. Bill of Materials (BOM) Notes Component PD TIA One mil thickness gold wire, ball bond recommended. CB SC Description 1× vendor specific, 4.25 Gbps, photodiode 1× ADN2882 (0.7 mm × 1.2 mm), 4.25 Gbps, transimpedance amplifier 1× 200 pF, RF single-layer capacitor 1× ceramic standoff or 1× optional capacitor Minimize all GND bond-wire lengths. Minimize IN, FILTER, OUT, and OUTB bond-wire lengths. Maintain symmetry in length and orientation between OUT and OUTB bond wires. Maintain symmetry between IN/FILTER and OUT/OUTB bond wires. Rev. A | Page 11 of 12 ADN2882 Data Sheet OUTLINE DIMENSIONS 1 17 16 15 13 14 2 12 3 TOP VIEW 0.70 11 4 5 6 7 8 9 10 1.20 SIDE VIEW Figure 27. 17-Pad Bare Die Sales [CHIP] C-17-1 Dimensions shown in millimeters DIE INFORMATION Table 7. Pad Coordinates Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Mnemonic GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC 0.25 X (μm) −500 −500 −500 −500 −500 −350 −200 −50 +130 +500 +350 +350 +500 +130 −50 −200 −350 Y (μm) +260 +130 +10 −120 −260 −260 −260 −260 −260 −260 −60 +60 +260 +260 +260 +260 +260 Die Size 0.7 mm × 1.2 mm (edge to edge, including 1 mil scribe) Die Thickness 10 mils = 0.25 mm Passivation Openings 0.075 mm × 0.075 mm (Pad 1 to 8, 10, 13, and Pad 15 to 17) 0.144 mm × 0.075 mm (Pad 9, 11, 12, and Pad 14) Passivation Composition 5000 Å Si3N4 (top) 5000 Å SiO2 (bottom) Pad Composition Al/1%Cu Substrate Contact To ground ORDERING GUIDE Model ADN2882ACHIPS ADN2882A-DF 1 Temperature −40°C to +95°C −40°C to +95°C MOQ 200 5,704 Description1 17-Pad Die Sales Reconstituted die on 8” metal film frame Contact Analog Devices, Inc., sales for more information on the film frame ADM2882A-DF. ©2005–2014 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04946-0-9/14(A) Rev. A | Page 12 of 12 Package Option C-17-1