BTD5213M3

CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 1/7
NPN Epitaxial Planar Transistor
BTD5213M3
Features
• High VCEO, VCEO=100V
• High IC, IC(DC)=1A
• Low VCE(sat)
• Good current gain linearity
• Complementary to BTB1260M3
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTD5213M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Storage Temperature
Tj
Tstg
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
BTD5213M3
Limit
Unit
100
100
5
1
2 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
100
100
5
160
-
Typ.
230
6
Max.
1
1
0.3
400
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=80V. IE=0
VEB=4V,IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Q
R
Range
160~320
200~400
Ordering Information
Device
BTD5213M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
Recommended soldering footprint
BTD5213M3
CYStek Product Specification
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
VCE=5V
Saturation Voltage-(mV)
Current Gain---HFE
HFE
100
VCE=2V
VCE=1V
10
IC=25IB
100
IC=10IB
10
1
10
100
Collector Current ---IC(mA)
1
1000
Saturation Voltage vs Collector Current
1000
10000
[email protected]=10IB
[email protected]=2V
On Voltage-(mV)
Saturation Voltage-(mV)
10
100
Collector Current ---IC(mA)
On Voltage vs Collector Current
10000
1000
1000
100
100
1
10
100
1000
10000
1
Collector Current--- IC(mA)
10
100
1000
Collector Current--- IC(mA)
10000
Capacitance Characteristics
Transition Frequency vs Collector Current
100
1000
f=1MHz
VCE=10V
f=1MHz
Capacitance---Cob(pF)
Transition Frequency---fT(MHz)
IC=20IB
100
10
1
10
1
BTD5213M3
10
100
Collector Current---IC(mA)
1000
0.1
1
10
Collector Base Voltage-- VCB(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curves
Power Dissipation---PD(W)
2.5
2
See Note 2 on page 1
1.5
See Note 1 on page 1
1
0.5
0
0
BTD5213M3
25
50
75
100 125 150
Ambient Temperature---TA(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTD5213M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD5213M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date : 2014.01.23
Page No. : 7/7
SOT-89 Dimension
Marking:
A
2
1
3
Product
Code
H
C
month code: 1~9,
A,B,C
Wafer code
HFE rank
D
B
E
Style: Pin 1. Base 2. Collector 3. Emitter
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD5213M3
CYStek Product Specification