CYStech Electronics Corp. Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3 Features • High breakdown voltage, BVCEO≥ -100V • Large continuous collector current capability • Low collector saturation voltage • Complementary to BTD5213M3 • Pb-free lead plating and halogen-free package Symbol Outline BTB1198M3 SOT-89 B：Base C：Collector E：Emitter B C E Ordering Information Device BTB1198M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTB1198M3 CYStek Product Specification Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current(DC) Symbol VCBO VCEO VEBO IC ICP IB Limits -120 -100 -5 -1 -2 -200 Unit V A mA 0.6 Power Dissipation Pd Thermal Resistance, Junction to Ambient RθJA Operating Junction Temperature Range Tj Storage Temperature Range Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 1 (Note 1) 2 (Note 2) 208 83.3 (Note 1) 59.5 (Note 2) -65~+150 -65~+150 W °C/W °C °C 2 . When mounted on ceramic with area measuring 40×40×1 mm Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -120 -100 -5 160 180 40 150 - Typ. -0.1 -0.16 -0.3 -0.89 200 11 Max. -100 -20 -0.2 -0.3 -0.5 -1.1 -1 390 15 Unit V V V nA nA V V V V V MHz pF Test Conditions IC=-100μA IC=-10mA IE=-100μA VCB=-100V VEB=-4V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-1mA VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTB1198M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 100 Saturation Voltage---(mV) Current Gain---HFE VCE=3V VCE=2V VCE=1V 10 VCESAT IC=100IB IC=50IB IC=20IB IC=10IB 1000 100 10 1 10 100 Collector Current---IC(mA) 1000 1 Saturation Voltage vs Collector Current 1000 On Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBESAT@IC=10IB 100 VBEON@VCE=3V 100 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 Transition Frequency vs Collector Current Power Derating Curves 1000 Transition Frequency---fT(MHz) 2.5 Power Dissipation---PD(W) 10 100 Collector Current---IC(mA) See Note 2 on page 1 2 1.5 See Note 1 on page 1 1 0.5 100 10 0 0 BTB1198M3 50 100 150 Ambient Temperature---TA(℃) 200 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTB1198M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1198M3 CYStek Product Specification Spec. No. : C824M3 Issued Date : 2007.05.04 Revised Date : 2014.02.24 Page No. : 6/6 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 Device Code H C AK □□ Date Code D B E I F G Style: Pin 1. Base 2. Collector 3. Emitter 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1198M3 CYStek Product Specification