BTB1198M3

CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 1/6
General Purpose PNP Epitaxial Planar Transistor
BTB1198M3
Features
• High breakdown voltage, BVCEO≥ -100V
• Large continuous collector current capability
• Low collector saturation voltage
• Complementary to BTD5213M3
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTB1198M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Ordering Information
Device
BTB1198M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1198M3
CYStek Product Specification
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Limits
-120
-100
-5
-1
-2
-200
Unit
V
A
mA
0.6
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
1
(Note 1)
2
(Note 2)
208
83.3 (Note 1)
59.5 (Note 2)
-65~+150
-65~+150
W
°C/W
°C
°C
2 . When mounted on ceramic with area measuring 40×40×1 mm
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
-120
-100
-5
160
180
40
150
-
Typ.
-0.1
-0.16
-0.3
-0.89
200
11
Max.
-100
-20
-0.2
-0.3
-0.5
-1.1
-1
390
15
Unit
V
V
V
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-100μA
VCB=-100V
VEB=-4V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-1mA
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTB1198M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
Saturation Voltage---(mV)
Current Gain---HFE
VCE=3V
VCE=2V
VCE=1V
10
VCESAT
IC=100IB
IC=50IB
IC=20IB
IC=10IB
1000
100
10
1
10
100
Collector Current---IC(mA)
1000
1
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
On Voltage---(mV)
Saturation Voltage---(mV)
1000
[email protected]=10IB
100
[email protected]=3V
100
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
Power Derating Curves
1000
Transition Frequency---fT(MHz)
2.5
Power Dissipation---PD(W)
10
100
Collector Current---IC(mA)
See Note 2 on page 1
2
1.5
See Note 1 on page 1
1
0.5
100
10
0
0
BTB1198M3
50
100
150
Ambient Temperature---TA(℃)
200
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTB1198M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1198M3
CYStek Product Specification
Spec. No. : C824M3
Issued Date : 2007.05.04
Revised Date : 2014.02.24
Page No. : 6/6
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
Device
Code
H
C
AK
□□
Date Code
D
B
E
I
F
G
Style: Pin 1. Base 2. Collector 3. Emitter
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1198M3
CYStek Product Specification