MTP405CJ3

CYStech Electronics Corp.
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP405CJ3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-18A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-34A
21mΩ(typ)
33mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTP405CJ3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTP405CJ3-0-T3-G
Package
TO-252
(Pb-free lead plating package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP405CJ3
CYStek Product Specification
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=100°C
Pulsed Drain Current
TC=25℃
TC=100℃
Power Dissipation
TA=25℃
TA=100℃
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
VDS
VGS
Limits
EAS
IAS
Tj, Tstg
-30
±20
-34
-21.5
-18
-11.4
-80 *1
50 *4
20 *4
2.5
1.0
45
*2
-18
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
2.5
50 *3
ID
IDM
PD
Unit
V
A
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
°C/W
Note : *1. Pulse width limited by safe operating area.
*2 . Tj=25°C, VDD=-15V, L=0.14mH, RG=25Ω.
*3 . The value of Rth,j-a is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with
TA=25°C. The value in any given application depends on the user’s specific board design.
*4 . The power dissipation PD is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It
is used to determined the current rating, when this rating falls below the package limit.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
MTP405CJ3
Min.
Typ.
Max.
Unit
-30
-1.0
-
-1.4
20
21
33
-2.5
±100
-1
-5
30
45
V
V
S
nA
-
18
3.3
4.9
-
μA
mΩ
nC
Test Conditions
VGS=0, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-5V, ID=-18A
VGS=±20
VDS =-30V, VGS =0
VDS =-24V, VGS =0, Tj=55°C
VGS =-10V, ID=-18A
VGS =-4.5V, ID=-10A
ID=-18A, VDS=-15V, VGS=-10V
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*trr
*Qrr
-
7
11
27
8
1308
137
111
-
24
14
-1
-18
-
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 3/9
ns
VDS=-15V, VGS=-10V, RG=3Ω,
ID=-18A
pF
VGS=0V, VDS=-15V, f=1MHz
V
A
ns
nC
IS=-1A, VGS=0V
VD=VG=0, VS=-1V
IS=-18A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTP405CJ3
CYStek Product Specification
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Normalized Brekdown Voltage vs Ambient
Temperature
Typical Output Characteristics
1.4
80
60
-BVDSS, Normalized Drain-Source
Breakdown Voltage
70
-ID, Drain Current (A)
-VGS=6V
10V
9V
8V
7V
-VGS=5V
50
40
-VGS=4V
30
20
-VGS=3V
10
-VGS=2V
1.2
1
0.8
ID=-250μA,
VGS=0V
0.6
0
0
1
2
3
4
-VDS , Drain-Source Voltage(V)
-60
5
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1000
VGS=-3V
VGS=-2.5V
VGS=-4.5V
100
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
4
8
12
16
-IS, Source Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
240
1.8
R DS(on) , Normalized Static DrainSource On-State Resistance
R DS(on) , Static Drain-Source OnState Resistance(mΩ)
-20
ID=-18A
200
160
120
80
40
VGS=-10V, ID=-18A
1.6
1.4
1.2
1
0.8
0.6
RDS(ON) @ Tj=25°C : 21.4mΩ
0.4
0.2
0
0
MTP405CJ3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 5/9
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
-VGS(th) , Normalized Threshold
Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
Gate Charge Characteristics
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
10
100
10
1
VDS=-5V
Pulsed
TA=25°C
VDS=-15V
ID=-18A
8
6
4
2
0
0.1
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
100
-ID, Maximum Drain Current(A)
DC
1
0.1
4
6
8 10 12 14 16
Qg, Total Gate Charge(nC)
18
20
40
100μs
1ms
10ms
100m
1s
10
2
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
TC=25°C, Tj=150°C, VGS=-10V
θJC=2.5°C/W, Single Pulse
35
30
25
20
15
10
TC=25°C, VGS=-10V
5
0
0.01
0.1
MTP405CJ3
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
3000
TJ(MAX) =150°C
TC=25°C
θJC=2.5°C/W
Power (W)
2500
2000
1500
1000
500
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTP405CJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP405CJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP405CJ3
CYStek Product Specification
Spec. No. : C386J3
Issued Date : 2007.06.08
Revised Date : 2014.03.14
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
405C
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP405CJ3
CYStek Product Specification