MTP5210F3

Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTP5210F3
BVDSS
ID@ VGS=-10V, TC=25°C
RDSON(TYP)
Features
-100V
VGS=-10V, ID=-20A
-34A
37mΩ
VGS=-4.5V, ID=-18A
42mΩ
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
Symbol
Outline
MTP5210F3
TO-263
G：Gate
D：Drain
S：Source
G
D
S
Ordering Information
Device
Package
Shipping
TO-263
MTP5210F3-0-T7-X
800 pcs / Tape & Reel
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP5210F3
CYStek Product Specification
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=1mH, ID=-20A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
TC=25°C
Power Dissipation
TC=100°C
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
-100
±20
-34
-21
-130
-20
200
10
100
40
-55~+150
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.5
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
MTP5210F3
Min.
Typ.
Max.
-100
-1.0
-
-1.9
29
37
42
-3.0
±100
1
25
55
70
-
148
26
80
70
13
240
50
8233
234
166
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-20A
VGS=±20V
VDS =-80V, VGS =0V
VDS =-70V, VGS =0V, Tj=125°C
VGS =-10V, ID=-20A
VGS =-4.5V, ID=-18A
nC
ID=-34A, VDS=-50V, VGS=-10V
ns
VDS=-20V, ID=-1A, VGS=-10V,
RG=6Ω
pF
VGS=0V, VDS=-25V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
-0.85
180
1.3
-34
-130
-1.2
-
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 3/9
A
V
ns
μC
IF=-20A, VGS=0V
IF=-20A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP5210F3
CYStek Product Specification
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
120
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V
-ID, Drain Current (A)
100
4V
80
60
40
-VGS=3V
20
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=-3V
-VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=-4.5V
100
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=-10V
0.2
10
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
ID=-20A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=-10V, ID=-20A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 36.6 mΩ
0
0
0
MTP5210F3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
100000
Ciss
10000
1000
C oss
Crss
ID=-250μA
1.2
1
0.8
0.6
0.4
100
0.1
1.4
1
10
-VDS , Drain-Source Voltage(V)
-60 -40 -20
100
60 80 100 120 140 160
Gate Charge Characteristics
100
10
VDS=-80V
-VGS , Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
20 40
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=-10V
0.1
Ta=25°C
Pulsed
8
VDS=-50V
6
4
2
ID=-34A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
40
80
120
Qg, Total Gate Charge(nC)
160
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
40
100
RDSON
Limited
10
-ID, Maximum Drain Current(A)
1000
-ID, Drain Current(A)
0
100μs
1ms
10ms
100ms
1s
DC
1
TC=25°C, Tj=150°C
VGS=-10V, θJC=1.5°C/W
Single Pulse
0.1
35
30
25
20
15
10
5
VGS=-10V, RθJC=1.5°C/W
0
0.01
0.1
MTP5210F3
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 6/9
Typical Characteristics (Cont.)
Power Derating Curve
140
120
120
100
100
PD, Power Dissipation(W)
-ID, Drain Current(A)
Typical Transfer Characteristics
VDS=-10V
80
60
40
80
60
40
20
20
0
0
0
2
4
6
8
-VGS , Gate-Source Voltage(V)
10
0
25
50
75
100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTP5210F3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP5210F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP5210F3
CYStek Product Specification
Spec. No. : C563F3
Issued Date : 2012.12.25
Revised Date : 2015.09.03
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B
D
2
F
α1
2
1
E
C
A
Device Name
5210
Date Code
□□□□
α2
3
I
G
J
K
L
α3
H
Style : Pin 1.Gate
2.Drain
3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Min.
Max.
0.3800
0.4050
0.3300
0.3700
0.0550
0.5750
0.6250
0.1600
0.1900
0.0450
0.0550
0.0900
0.1100
0.0180
0.0290
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
9.65
10.29
8.38
9.40
1.40
14.61
15.88
4.06
4.83
1.14
1.40
2.29
2.79
0.46
0.74
DIM
I
J
K
L
α1
α2
α3
Inches
Min.
Max.
0.0500
0.0700
*0.1000
0.0450
0.0550
0.0200
0.0390
-
Millimeters
Min.
Max.
1.27
1.78
*2.54
1.14
1.40
0.51
0.99
6°
8°
6°
8°
0°
5°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP5210F3
CYStek Product Specification