MTB060N06I3

Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 1/8
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
MTB060N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
RDSON(MAX)@VGS=10V, ID=10A
16A
35mΩ(typ.)
RDSON(MAX)@VGS=5V, ID=8A
40mΩ(typ.)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB060N06I3
TO-251
G：Gate D：Drain
S：Source
G D S
Ordering Information
Device
MTB060N06I3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA :80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB060N06I3
CYStek Product Specification
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
60
±20
16
10
30
16
12.8
3.6
20
8
-55~+150
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
110
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
ID(ON)
*1
RDS(ON)
*1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
MTB060N06I3
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
12
-
1.7
10
35
40
3.0
±100
1
25
50
55
V
V
S
nA
μA
μA
A
mΩ
mΩ
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=10A
VGS=±20V, VDS=0V
VDS =48V, VGS =0V
VDS =40V, VGS =0V, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=10A
VGS =5V, ID=8A
-
11
2.2
4.2
11.7
5.2
18
-
nC
ID=10A, VDS=20V, VGS=10V
ns
VDS=20V, ID=1A, VGS=10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
6
1165
56
43
2.5
-
-
0.87
16
8
12
48
1.3
-
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 3/8
pF
VGS=0V, VDS=20V, f=1MHz
Ω
VGS=15mV, VDS=0, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB060N06I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V,6V,5V
ID, Drain Current (A)
25
VGS=4V
20
15
10
VGS=3V
5
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
-75 -50 -25
8
2
4
6
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
1000
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
VGS=3V
VGS=2.5V
100
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
2.4
360
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
320
280
2
1.6
240
VGS=5V, ID=8A
1.2
200
160
0.8
120
ID=10A
ID=8A
80
VGS=10V, ID=10A
0.4
40
0
0
0
MTB060N06I3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
0.2
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
100
10
VDS=20V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=5V
Pulsed
Ta=25°C
8
VDS=50V
6
4
2
ID=10A
0
0.1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
Qg, Total Gate Charge(nC)
16
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
20
100
RDSON
Limited
18
10μ s
10
ID, Maximum Drain Current(A)
ID, Drain Current (A)
0
100 μs
1ms
1
TC=25°C, Tj=150°C
VGS=10V
Single Pulse
0.1
10ms
100ms
DC
16
14
12
10
8
6
4
VGS=10V
2
0
0.01
0.1
MTB060N06I3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 6/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
VDS=5V
ID, Drain Current(A)
25
20
15
10
5
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
0.2
1
0.1
1.ZθJC(t)=6.25°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.05
0.02
0.01
0.1
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB060N06I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB060N06I3
CYStek Product Specification
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 8/8
CYStech Electronics Corp.
TO-251 Dimension
Marking:
Product
Name
B060
N06
□□□□
Date
Code
1
2
3
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Millimeters
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
7.20
7.80
2.30 REF
0.60
0.90
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.252
0.268
0.205
0.217
0.268
0.283
0.283
0.307
0.091 REF
0.024
0.035
DIM
G
H
J
K
L
M
Millimeters
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0.45
0.60
0.90
1.50
5.40
5.80
Inches
Min.
Max.
0.020
0.028
0.087
0.094
0.018
0.022
0.018
0.024
0.035
0.059
0.213
0.228
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB060N06I3
CYStek Product Specification