MTC4503AQ8

Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 1/12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC4503AQ8
Description
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
30V
11A
13mΩ
20mΩ
P-CH
-30V
-9.5A
21mΩ
34mΩ
The MTC4503AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTC4503AQ8
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTC4503AQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTC4503AQ8
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Gate-Source Voltage
VGS
Continuous Drain Current TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
ID
Continuous Drain Current TA=25 °C, VGS=10V (-10V)
(Note 2)
TA=100 °C, VGS=10V (-10V)
IDM
Pulsed Drain Current (Note 1)
IDM
Power Dissipation for Dual Operation
Limits
N-channel
P-channel
30
-30
±20
±20
11
-9.5
7
-6.0
8.2
-6.8
5.2
-4.3
30
-30
Unit
V
A
2
PD
Power Dissipation for Single Operation
1.6 (Note 2)
W
0.9 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
30
1.0
-
1.6
13
20
5
2.5
±100
1
25
18
26
-
-
729
80
71
4.1
3.5
20
7.3
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTC4503AQ8
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=30V, VGS=0, Tj=125°C
VGS=10V, ID=6A
VGS=4.5V, ID=4A
VDS=10V, ID=6A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A, VGS=10V, RG=3.3Ω
V
nA
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Body Diode
*IS
-
11
2.6
4.2
-
*ISM
-
-
8.2
-
-
30
*VSD
*trr
*Qrr
-
20
12
1.3
-
nC
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 3/12
VDS=15V, ID=6A, VGS=10V
A
V
ns
nC
VGS=0V, IS=8.2A
IF=8.2A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
-30
-1.0
-
-1.5
21
34
7
-2.5
±100
-1
-25
28
45
-
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*IS
-
1316
143
118
14
10
37
10
16
4.5
5.3
-
-
-
-6.8
*ISM
-
-
-30
*VSD
*trr
*Qrr
-
26
20
-1.3
-
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-30V, VGS=0
VDS=-30V, VGS=0, Tj=125°C
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4A
VDS=-10V, ID=-6A
pF
VDS=-15V, VGS=0, f=1MHz
ns
VDS=-15V, ID=-1A, VGS=-10V, RG=3.3Ω
nC
VDS=-15V, ID=-6A, VGS=-10V
V
nA
μA
mΩ
Dynamic
A
V
ns
nC
VGS=0V, IS=-6.8A
IF=6.8A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4503AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 4/12
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
ID, Drain Current(A)
25
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V, 9V, 8V, 7V, 6V, 5V
4V
20
15
10
VGS=2V
VGS=3V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
5
0.4
0
0
1
2
3
4
VDS , Drain-Source Voltage(V)
-60
5
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
100
VGS=3V
VGS=4.5V
VGS=10V
10
0.01
0.1
1
10
ID, Drain Current(A)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
100
0
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
90
80
ID=6A
70
60
50
40
30
20
10
1.8
VGS=10V, ID=6A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 13.3mΩ typ.
0.6
0.4
0
0
MTC4503AQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS , Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
60
100
140
Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
20
Tj, Junction Temperature(°C)
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
VDS=15V
ID=6A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
Qg, Total Gate Charge(nC)
12
14
Maximum Drain Current vs JunctionTemperature
Maximum Safe Operating Area
10
100
ID, Drain Current(A)
ID, Maximum Drain Current(A)
9
RDS(ON) Limit
100μs
10
1ms
10ms
100m
1
1s
0.1
DC
TA=25°C, Tj=150°C, VGS=10V
RθJA=78°C/W,Single Pulse
8
7
6
5
4
3
TA=25°C, VGS=10V
RθJA=78°C/W
2
1
0
0.01
0.01
MTC4503AQ8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 6/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC4503AQ8
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 7/12
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
30
-ID, Drain Current (A)
-BVDSS, Normalized Drain-Source
Breakdown Voltage
VGS=-4V
25
-10V, -9V, -8V, -7V,-6V,-5V
20
15
VGS=-3V
10
VGS=-2.5V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
1
2
3
4
-VDS , Drain-Source Voltage(V)
-60
5
-20
Static Drain-Source On-State resistance vs Drain Current
180
Source Drain Current vs Source-Drain Voltage
1000
1.2
VGS=0V
100
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
VGS=-3V
VGS=-4.5V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=-10V
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
R DS(on) , Normalized Static Drain-Source
On-State Resistance
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
200
180
160
140
120
100
80
ID=-6A
ID=-4A
40
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
60
2
20
2
1.8
VGS=-10V, ID=-6A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 21mΩ typ.
0.6
0.4
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
MTC4503AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 8/12
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
ID=-250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
Gate Charge Characteristics
10
1
VDS=-10V
Pulsed
TA=25°C
VDS=-15V
ID=-6A
8
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
10
100
6
4
2
0.1
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
4
8
12
Qg, Total Gate Charge(nC)
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
8
-ID, Maximum Drain Current(A)
100
100μs
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
10
1ms
10ms
100m
1
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
θJA=78°C/W, Single Pulse
DC
7
6
5
4
3
2
TA=25°C, VGS=-10V
RθJA=78°C/W
1
0
0.01
0.01
MTC4503AQ8
0.1
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 9/12
Typical Characteristics(Cont.) : Q2(P-channel)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t 1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC4503AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC4503AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC4503AQ8
CYStek Product Specification
Spec. No. : C384Q8
Issued Date : 2012.04.30
Revised Date : 2014.03.07
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
4503A
Date Code
J
K
E
D
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC4503AQ8
CYStek Product Specification