BTA1036N3

CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.04.28
Page No. : 1/8
General Purpose PNP Epitaxial Planar Transistor
BTA1036N3
Description
• The BTA1036N3 is designed for using in driver stage of AF amplifier and general purpose amplification.
• Large IC , IC(Max)= -0.6A
• Low VCE(sat), ideal for low-voltage operation.
• Complementary to BTC2411N3.
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTA1036N3
SOT-23
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTA1036N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.04.28
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Limits
-60
-60
-5
-0.6
225
556
-55~+150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
hFE 1
hFE 2
hFE 3
*hFE 4
*hFE 5
fT
Cob
Min.
-60
-60
-5
-0.05
-0.1
-0.6
-0.7
75
100
100
100
50
200
-
Typ.
-
Max.
-10
-50
-0.4
-0.75
-0.95
-1.3
300
8
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=-10μA
IC=-10mA
IE=-10μA
VCB=-50V
VCE=-30V, VEB=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-0.1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-5V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.04.28
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.6
0.18
1mA
-IC, Collector Current(A)
-IC, Collector Current(A)
0.16
0.14
0.12
0.1
500uA
400uA
300uA
0.08
0.06
0.04
200uA
0.02
-IB=100uA
0
5mA
0.5
0.4
2.5mA
2mA
1.5mA
0.3
0.2
1mA
0.1
-IB=500uA
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
0
6
1.2
0.9
0.8
50mA
20mA
-IC, Collector Current(A)
-IC, Collector Current(A)
6
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
10mA
0.6
6mA
0.5
4mA
0.4
0.3
-IB=2mA
0.2
1
0.8
25mA
20mA
0.6
10mA
-IB=5mA
0.4
0.2
0.1
0
0
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
0
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
Tj=125°C
Tj=75°C
HFE, Current Gain
Tj=75°C
HFE, Current Gain
1
2
3
4
5
-VCE, Collector-to-Emitter Voltage(V)
100
Tj=25°C
Tj=0°C
Tj=-40°C
Tj=125°C
100
Tj=25°C
Tj=0°C
Tj=-40°C
-VCE=2V
-VCE=1V
10
10
1
BTC2412N3
10
100
-IC, Collector Current(mA)
1000
1
10
100
-IC, Collector Current(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.04.28
Page No. : 4/8
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Tj=125°C
-VCESAT, Saturation Voltage(mV)
HFE, Current Gain
Tj=75°C
100
Tj=25°C
Tj=0°C
Tj=-40°C
VCE=10V
VCESAT@IC=10IB
100
125°C
75°C
25°C
0°C
-40°C
10
10
1
10
100
1000
1
-IC, Collector Current(mA)
Saturation Voltage vs Collector Current
1000
-VCESAT, Saturation Voltage(mV)
-VCESAT, Saturation Voltage(mV)
1000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
125°C
75°C
25°C
0°C
-40°C
10
VCESAT@IC=50IB
100
125°C
75°C
25°C
0°C
-40°C
10
1
10
100
-IC, Collector Current(mA)
1000
1
10
100
-IC, Collector Current(mA)
1000
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
VBESAT@IC=10IB
-40°C
0°C
25°C
75°C
125°C
-VBESAT, Saturation Voltage(mV)
-VBESAT,Saturation Voltage(mV)
10
100
-IC, Collector Current(mA)
1000
-40°C
0°C
25°C
75°C
125°C
VBESAT@IC=20IB
1000
100
100
1
BTC2412N3
10
100
-IC, Collector Current(mA)
1000
1
10
100
-IC, Collector Current(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.04.28
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Reverse-biased Voltage
On Voltage vs Collector Current
100
10000
-40°C
0°C
25°C
75°C
125°C
Cib
Capacitance(pF)
-VBEON, On Voltage(mV)
VBEON@VCE=-1V
1000
10
Cob
100
1
1
10
100
-IC, Collector Current(mA)
1000
0.1
100
Power Derating Curve
Transition Frequency vs Collector Current
250
1000
-VCE=20V
Power Dissipation---PD(mW)
fT, Transition Frequency(MHz)
1
10
-VR, Reverse-biased Voltage(V)
100
10
200
150
100
50
0
1
10
-IC, Collector Current(mA)
100
0
50
100
150
Ambient Temperature --- Ta(℃ )
200
Recommended Soldering Footprint
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C305N3
Issued Date : 2002.06.11
Revised Date :2014.04.28
Page No. : 6/ 6
Reel Dimension
Carrier Tape Dimension
BTA1036N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C305N3
Issued Date : 2002.06.11
Revised Date :2014.04.28
Page No. : 7/ 6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTA1036N3
CYStek Product Specification
Spec. No. : C305N3
Issued Date : 2002.06.11
Revised Date :2014.04.28
Page No. : 8/ 6
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated..
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1036N3
CYStek Product Specification