CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol Outline MTN3018S3 D SOT-323 D G S G：Gate S：Source D：Drain G S Ordering Information Device MTN3018S3-0-T1-G MTN3018S3 Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Symbol VDSS VGSS ID IDP IDR IDRP PD Continuous Pulsed Continuous Pulsed Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature TCH Tstg Limits 60 ±20 115 700 *1 115 700 *1 200 *2 1250 *3 +150 -55~+150 Unit V V mA mA mA mA mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. BVDSS* 60 VGS(th) 1 2.5 IGSS ±10 IDSS 1 7.4 13 7.8 15 RDS(ON)* 4.4 12 4.9 6 3.3 4.5 GFS 100 Ciss 30.5 Coss 9.3 Crss 5.9 - Unit V V μA μA mS Test Conditions VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=10mA, VGS=2.5V ID=10mA, VGS=4V ID=200mA, VGS=4V ID=200mA, VGS=10V VDS=10V, ID=100mA pF VDS=10V, VGS=0, f=1MHz Ω *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% MTN3018S3 CYStek Product Specification Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 3/7 CYStech Electronics Corp. Characteristic Curves Typical Output Characteristics Typical Transfer Characteristics 0.3 0.3 4V 6V 0.2 0.15 VDS=10V 0.25 3.5V Drain Current -ID(A) Drain Current - ID(A) 0.25 3V 0.1 0.2 0.15 0.1 0.05 0.05 VGS=2.2V 0 0 0 1 2 3 Drain-Source Voltage -VDS(V) 0 4 10 Static Drain-Source On-State Resistance-RDS(on)(Ω) Static Drain-Source On-State ResistanceRDS(on)(Ω) 1000 100 VGS=2.5V VGS=4V 10 1 0.001 0.01 0.1 Drain Current-ID(A) VGS=5V VGS=10V 1 0.001 1 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage Reverse Drain Current vs Source-Drain Voltage 7 10 Source-Drain Voltage-VSD(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) 4 Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 6 5 4 ID=100mA 3 ID=50mA 2 1 1 0.1 0.01 0.001 0 0 MTN3018S3 1 2 3 Gate-Source Voltage-VGS(V) 5 10 15 20 Gate-Source Voltage-VGS(V) 25 0 0.2 0.4 0.6 0.8 Reverse Drain Current -IDR(A) 1 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 4/7 Characteristic Curves(Cont.) Power Derating Curve Capacitance vs Drain-to-Source Voltage 250 Power Dissipation---PD(mW) 100 Capacitance---(pF) Ciss C oss 10 Crss 200 150 100 50 0 1 0.1 MTN3018S3 1 10 Drain-Source Voltage -VDS(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3018S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S3-R Issued Date : 2007.11.29 Revised Date : 2013.09.09 Page No. : 7/7 SOT-323 Dimension Marking: TE 72 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 Style: Pin 1.Gate 2.Source 3.Drain Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 DIM A A1 A2 b c D E Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 DIM E1 e e1 L L1 θ Millimeters Min. Max. 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Inches Min. Max. 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3018S3 CYStek Product Specification