MTB04N03J3

CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTB04N03J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=24A
30V
75A
3.1mΩ(typ)
4.7mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-252(DPAK)
MTB04N03J3
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTB04N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB04N03J3
CYStek Product Specification
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 2/11
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.5mH, ID=35A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
30
±20
75
48
200
53
300
5
50
20
-55~+150
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
2.5
50 (Note)
110
Unit
°C/W
°C/W
°C/W
Note : When mounted on the minimum pad size recommended (PCB mount).
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTB04N03J3
Min.
Typ.
Max.
Unit
Test Conditions
30
1
-
1.6
3.1
4.7
28
2.5
±100
1
25
4
6
-
V
V
nA
S
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =30V, VGS =0V
VDS =30V, VGS =0V, Tj=125°C
VGS =10V, ID=30A
VGS =4.5V, ID=24A
VDS =5V, ID=20A
-
50
18
24
22
21
117
52
-
nC
ID=40A, VDS=15V, VGS=4.5V
ns
VDS=15V, ID=1A, VGS=10V,
RGS=6Ω, RL=15Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
4753
495
348
1.6
-
-
37
26
40
160
1.3
-
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 3/11
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=40A, VGS=0V
IF=40A, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB04N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 4/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50
240
ID, Drain Current(A)
BVDSS, Drain-Source Breakdown
Voltage(V)
7V,8V,9V,10V
200
6V
VGS=5V
160
VGS=4V
120
80
40
45
40
35
30
VGS=3V
20
-100
0
0
2
ID=250μA,
VGS=0V
25
VGS=2V
4
6
8
VDS , Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
200
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
10
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=125°C
0.4
VGS=10V
1
0.001
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=40A
80
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
70
60
50
40
30
20
10
8
7
VGS=10V, ID=40A
6
5
4
3
2
1
0
0
0
MTB04N03J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 5/11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
10000
VGS(th), Threshold Voltage(V)
Capacitance---(pF)
Ciss
1000
C oss
Crss
ID=250μA
1.8
1.6
1.4
1.2
1
0.8
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
140
10
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
VDS=15V
ID=40A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
20
40
60
80
100
Total Gate Charge---Qg(nC)
120
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
90
ID, Maximum Drain Current(A)
1000
10μs
ID, Drain Current(A)
60
Gate Charge Characteristics
100
100
20
Tj, Junction Temperature(°C)
100μs
1ms
10ms
RDS(ON) Limit
10
100ms
DC
1
80
70
60
50
40
30
20
10
0
0.1
0.01
MTB04N03J3
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 6/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5 °C/W max.
2.Duty Factor, D=t 1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB04N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 7/11
Test Circuits and Waveforms
MTB04N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 8/11
Test Circuits and Waveforms(Cont.)
MTB04N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
MTB04N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB04N03J3
CYStek Product Specification
Spec. No. : C789J3
Issued Date : 2011.12.12
Revised Date : 2013.12.26
Page No. : 11/11
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B04
N03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB04N03J3
CYStek Product Specification