MTB24B03Q8

CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 1/9
Dual P-Channel Logic Level Enhancement Mode Power MOSFET
MTB24B03Q8
BVDSS
-30V
ID
RDSON(MAX)@VGS=-10V, ID=-8A
-8A
18mΩ(typ.)
RDSON(MAX)@VGS=-4.5V, ID=-6A
27mΩ(typ.)
Description
The MTB24B03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• RDS(ON)=24mΩ(max.)@VGS=-10V, ID=-8A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual P-ch MOSFET package
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTB24B03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTB24B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=1mH, ID=-8A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
TA=25°C (Note 3)
Power Dissipation
TA=100°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
-30
±25
-8
-6
-32
-12
32
8
2.4
1.3
-55~+175
PD
Tj ; Tstg
Unit
V
A
mJ
W
°C
100% UIS testing in condition of VD=-15V, L=0.1mH, VG=-10V, IL=-8A, Rated VDS=-30V P-CH
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
25
62.5
*3
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
MTB24B03Q8
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
BVDSS
VGS(th)
IGSS
-30
-1
-8
-
-1.5
18
27
13
-2.5
±100
-1
-10
24
30
-
V
V
nA
-
24
16.1
6.8
8
9.3
6.1
27
8
2006
200
153
4
-
-
32
26
-2.3
-9.2
-1.2
-
Test Conditions
Static
IDSS
ID(ON) *1
*RDS(ON) *1
GFS *1
Dynamic
Qg(VGS=-10V) *1, 2
Qg(VGS=-5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr *1
Qrr *1
S
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VGS=±25V
VDS =-24V, VGS =0V
VDS =-20V, VGS =0V, Tj=125°C
VDS =-5V, VGS =-10V
VGS =-10V, ID=-8A
VGS =-4.5V, ID=-6A
VDS =-5V, ID=-8A
nC
ID=-8A, VDS=-15V, VGS=-10V
ns
VDS=-15V, ID=-1A,VGS=-10V,
RG=2.7Ω
pF
VGS=0V, VDS=-15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
μA
A
mΩ
A
V
ns
nC
IF= IS, VGS=0V
IF= IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTB24B03Q8
MTB24B03Q8
Package
Shipping
SOP-8
2500 pcs / Tape & Reel
(Pb-free lead plating & Halogen-free package)
Marking
B24B03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-ID, Drain Current (A)
28
-BVDSS, Normalized Drain-Source
Breakdown Voltage
32
-VGS=4V
24
10V, 9V, 8V, 7V, 6V, 5V
20
16
12
-VGS=3V
8
1.2
1
0.8
-ID=250μA,
VGS=0V
4
0.6
0
0
1
2
3
4
5
6
7
8
-VDS , Drain-Source Voltage(V)
9
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
-VGS=2.5V
100
-VGS=3V
-VGS=4.5V
-VGS=10V
10
0.01
0.1
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1.6
R DS(on), Normalized Static DrainSource On-State Resistance
300
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
-ID=8A
250
200
150
100
50
-VGS=10V, -ID=8A
1.4
1.2
1
0.8
0.6
RDSON@Tj=25C : 18m Ω
0.4
0
0
MTB24B03Q8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
Crss
1.6
-ID=250μA
1.4
1.2
1
0.8
0.6
0.4
100
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=-15V
-VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
-VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=-10V
VDS=-5V
6
4
2
ID=-8A
0
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
100μs
10
1ms
10ms
1
1s
TA=25°C, Tj=175°C
VGS=10V, θJA=125°C/W
Single Pulse
100ms
DC
24
28
9
8
7
6
5
4
TA=25°C
-VGS=10V
RθJA=78°C/W
3
2
1
0
0.01
MTB24B03Q8
-ID, Maximum Drain Current(A)
RDSON
Limited
0.01
8
12
16
20
Qg, Total Gate Charge(nC)
10
100
0.1
4
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
0.1
1
10
-VDS , Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
1000
Typical Transfer Characteristics
32
VDS=10V
28
Power (W)
ID, Drain Current(A)
TJ(MAX) =175°C
TA=25°C
θJA=125°C/W
100
10
1
24
20
16
12
8
4
0.1
0.0001 0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
1000
2
4
6
VGS, Gate-Source Voltage(V)
8
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB24B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB24B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB24B03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C587Q8
Issued Date : 2011.01.27
Revised Date : 2012.10.26
Page No. : 9/9
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB24B03Q8
CYStek Product Specification