BTD2150N3

Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 1/8
CYStech Electronics Corp.
Low VCE(sat) NPN Epitaxial Planar Transistor
BTD2150N3
BVCEO
IC
RCE(SAT) typ.
50V
4A
90mΩ
Features
• Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A
• Excellent current gain characteristics
• Complementary to BTB1424N3
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTD2150N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj ; Tstg
Limit
80
50
6
4
7 (Note 1)
225
556
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
BTD2150N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
50
6
200
270
100
-
Typ.
40
160
180
90
0.94
175
14
Max.
100
100
100
220
320
160
1.3
820
-
Unit
V
V
V
nA
nA
mV
mV
mV
mΩ
V
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=80V, IE=0
VEB=6V, IC=0
IC=400mA, IB=20mA
IC=1A, IB=10mA
IC=2A, IB=100mA
IC=2A, IB=100mA
IC=2A, IB=200mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=1V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
S
T
Range
270~560
390~820
Ordering Information
Device
HFE Rank
BTD2150N3-S-T1-G
S
BTD2150N3-T-T1-G
T
BTD2150N3
Package
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.5
0.4
Collector Current---IC(A)
Collector Current---IC(A)
2
IB=1mA
0.45
0.35
0.3
0.25
IB=500uA
0.2
0.15
IB=300uA
IB=200uA
0.1
IB=100uA
IB=0
0.05
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
IB=5mA
1.8
1.6
1.4
1.2
IB=2.5mA
1
0.8
0.6
IB=1.5mA
IB=1mA
0.4
0.2
IB=500uA
IB=0
0
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
4
5
3
IB=10mA
2.5
IB=6mA
2
IB=4mA
1.5
1
IB=2mA
0.5
0
1
2
3
4
5
4
3.5
IB=25mA
3
IB=15mA
2.5
IB=10mA
2
IB=5mA
1.5
1
0.5
IB=0
0
IB=50mA
4.5
IB=20mA
Collector Current---IC(A)
Collector Current---IC(A)
3.5
IB=0
0
6
0
Collector-to-Emitter Voltage---VCE(V)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
Current Gain vs Collector Current
10000
10000
1000
VCE=5V
Ta=125°C
75°C
25°C
-40°C
Current Gain---HFE
VCE=2V
Current Gain---HFE
6
100
10
1000
Ta=125°C
75°C
25°C
-40°C
100
10
1
BTD2150N3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT) @ IC=20IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCE(SAT) @ IC=10IB
Ta=125°C
75°C
25°C
-40°C
100
10
1
Ta=125°C
75°C
25°C
-40°C
100
10
1
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
100000
10000
VCE(SAT) @ IC=100IB
Saturation Voltage---(mV)
VCE(SAT) @ IC=50IB
Saturation Voltage---(mV)
10000
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
Ta=125°C
75°C
25°C
-40°C
1000
100
10
10000
Ta=125°C
75°C
25°C
-40°C
1000
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
VBE(SAT) @ IC=20IB
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
Saturation Voltage---(mV)
100
1000
Collector Current---IC(mA)
1000
Ta= -40°C
25°C
75°C
125°C
100
10
1000
Ta=-40°C
25°C
75°C
125°C
100
10
1
BTD2150N3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 5/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
VBE(SAT) @ IC=100IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VBE(SAT) @ IC=50IB
1000
Ta= -40°C
25°C
75°C
125°C
100
10
1000
Ta=-40°C
25°C
75°C
125°C
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
10000
1000
10000
Ta=-40°C
25°C
75°C
125°C
Cib
Capacitance---(pF)
VBE(ON)@VCE=2V
On Voltage---(mV)
100
1000
Collector Current---IC(mA)
Capacitance vs Reverse-Biased Voltage
On Voltage vs Collector Current
1000
100
10
Cob
1
100
1
10
100
1000
Collector Current---IC(mA)
0.1
10000
Cutoff frequency vs Collector Current
1
10
Reverse-Biased Voltage---(V)
100
Power Derating Curve
1000
250
Power Dissipation---PD(mW)
Cutoff Frequency---fT(MHz)
10
100
10
VCE=1V
1
200
150
100
50
0
1
BTD2150N3
10
100
Collector Current---IC(mA)
1000
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTD2150N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD2150N3
CYStek Product Specification
Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2012.11.28
Page No. : 8/8
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
Product Code
3
CF
S
B
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style : Pin 1.Base 2.Emitter 3.Collector
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.95
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2150N3
CYStek Product Specification