BTC4061N3

CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTC4061N3
Description
• High breakdown voltage.
• Low collector output capacitance.
• Ideal for chroma circuit.
• Pb-free lead plating and halogen-free package package.
Symbol
Outline
BTC4061N3
SOT-23
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTC4061N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC4061N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
300
300
6
500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
175
556
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
300
300
6
90
100
40
50
-
Typ.
0.15
-
Max.
50
50
0.35
0.9
270
6
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=250V
VEB=5V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=20MHz
VCB=20V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Q
Range
100~180
120~270
BTC4061N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 3/7
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
HFE
100
VCE=10V
VCE=5V
VCE(SAT)
IC=20IB
100
IC=10IB
10
10
1
10
Collector Current ---IC(mA)
1
100
10
Collector Current--- IC(mA)
100
Cutoff Frequency vs Collector Current
Saturation Voltage vs Collector Current
1
Cutoff Frequency---FT(GHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=30V
0.1
100
1
10
Collector Current ---IC(mA)
100
1
10
Collector Current---IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTC4061N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 4/7
Reel Dimension
Carrier Tape Dimension
BTC4061N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 5/7
Recommended Soldering Footprint
BTC4061N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC4061N3
CYStek Product Specification
Spec. No. : C209N3
Issued Date : 2002.05.11
Revised Date : 2014.06.27
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
1D
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated..
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4061N3
CYStek Product Specification