MTBA0N10Q8

CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA0N10Q8
BVDSS
ID
RDS(ON)@VGS=10V, ID=5A
RDS(ON)@VGS=4.5V, ID=3A
100V
5A
90mΩ(typ)
94mΩ(typ)
Description
The MTBA0N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
Outline
MTBA0N10Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTBA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation
TA=100℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
100
±20
5
3.1
20 *1
5
1.25
0.625 *2
3
1.2
-55~+150
Symbol
Rth,j-c
Rth,j-a
Value
25
40 *3
ID
IDM
IAS
EAS
EAR
PD
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
*1
IDSS
RDS(ON)
Dynamic
Ciss
Coss
Crss
MTBA0N10Q8
*1
Min.
Typ.
Max.
Unit
100
1.0
-
1.9
12
90
94
3.0
±100
1
25
100
125
V
V
S
nA
-
1638
42
28
-
Test Conditions
mΩ
mΩ
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=5A
VGS=±20
VDS =80V, VGS =0
VDS =70V, VGS =0, Tj=125°C
VGS =10V, ID=5A
VGS =4.5V, ID=3A
pF
VGS=0V, VDS=25V, f=1MHz
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
23
6.4
7.9
17
5
45
9
2.5
Max.
-
-
0.81
30
65
5
20
1.3
-
Unit
Test Conditions
nC
VDS=50V, VGS=10V, ID=5A
ns
VDS=50V, ID=1A, VGS=10V,
RGS=6Ω
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=5A, VGS=0V
IF=5A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTBA0N10Q8
MTBA0N10Q8
Package
SOP-8
(Pb-free & Halogen-free package)
Shipping
Marking
2500 pcs / Tape & Reel
BA0N10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
20
ID, Drain Current (A)
4V,5V,6V7V,8V,9V
15
10
VGS=3V
5
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
-75 -50 -25
5
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
VGS=4.5V
100
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
280
ID=5A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
240
200
160
120
VGS=10V, ID=5A
2
1.6
1.2
0.8
0.4
80
0
MTBA0N10Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
140
VDS=50V
VDS=5V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
10
VDS=10V
1
0.1
Ta=25°C
Pulsed
8
VDS=20V
6
4
2
ID=5A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
Maximum Safe Operating Area
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
Typical Transfer Characteristics
100
35
RDSON
Limited
100μs
30
1ms
25
10ms
1
100ms
1s
TA=25°C, Tj=150°C
VGS=10V, RθJA=40°C/W
Single Pulse
0.1
DC
Drain Current -ID(A)
ID, Drain Current(A)
60
Gate Charge Characteristics
100
10
20
Tj, Junction Temperature(°C)
VDS=10V
20
15
10
5
0.01
0
0.1
MTBA0N10Q8
1
10
VDS, Drain-Source Voltage(V)
100
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
TJ(MAX) =150°C
TA=25°C
θJA=40°C/W
Power (W)
40
30
20
10
0
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTBA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTBA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA0N10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C790Q8
Issued Date : 2010.07.23
Revised Date : 2012.05.07
Page No. : 9/9
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
Date Code
J
E
D
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA0N10Q8
CYStek Product Specification