BTN1053M3

Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 1/8
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BVCEO
IC
RCESAT(MAX)
BTN1053M3
75V
2.5A
250mΩ
Features
• 2W power dissipation
• Excellent HFE Characteristics up to 1A
• Low Saturation Voltage, VCE(sat)=0.15V(typ)@IC=1A, IB=50mA
• 5A peak pulse current
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTN1053M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation @Ta=25℃
Operating Junction Temperature and Storage Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
150
75
5
2.5
5
1 (Note 2)
2 (Note 3)
-55~+150
Unit
V
V
V
A
W
°C
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
2: When the device is mounted on a FR-4 PCB measuring 15 ×15 ×0.6mm.
3: When the device is mounted on a ceramic substrate measuring 40 ×40 ×0.6mm.
BTN1053M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VBE(sat) *
VBE(on) *
hFE 1
*
hFE 2
*
hFE 3
*
hFE 4
*
fT
Cob
Min.
150
150
75
5
270
300
120
10
-
Typ.
250
250
100
7.7
0.9
0.9
0.6
0.9
0.95
600
300
25
140
23
Max.
10
10
10
40
200
400
500
1.2
1.2
820
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
Test Conditions
IC=100μA
IC=100μA
IC=10mA
IE=100μA
VCB=120V
VCE=120V
VEB=4V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=2A, IB=100mA
IC=3A, IB=100mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=4.5A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
S
T
Range
300~560
390~820
Ordering Information
Device
BTN1053M3
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
Marking
1000 pcs / Tape & Reel
CB
Recommended Storage Condition:
Temperature : 10~ 35 °C
Humidity : 30~ 60% RH
BTN1053M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.8
2
1mA
0.6
0.5
0.4
500uA
0.3
400uA
300uA
0.2
200uA
0.1
5mA
1.8
Collector Current---IC(A)
Collector Current---IC(A)
0.7
1.6
2.5mA
2mA
1.4
1.2
1.5mA
1
0.8
1mA
0.6
0.4
IB=500uA
0.2
IB=100uA
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
Emitter Grounded Output Characteristics
4
20mA
3.5
Collector Current---IC(A)
2.5
10mA
6mA
2
4mA
1.5
IB=2mA
1
0.5
50mA
3
20mA
2.5
10mA
2
IB=5mA
1.5
1
0.5
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
Current Gain vs Collector Current
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
10000
10000
VCE=1V
1000
VCE=2V
Current Gain---HFE
Current Gain---HFE
6
Emitter Grounded Output Characteristics
3
Collector Current---IC(A)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
25℃
100
75℃
25℃
1000
100
75℃
125℃
125℃
10
10
100
BTN1053M3
1000
Collector Current---IC(mA)
10000
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 4/8
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
[email protected]=10IB
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
1000
125℃
75℃
25℃
100
100
125℃
75℃
25℃
10
1
100
1000
Collector Current---IC(mA)
10000
1
10000
1000
1000
[email protected]=25IB
Saturation Voltage---(mV)
[email protected]=20IB
Saturation Voltage---(mV)
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
100
125℃
75℃
25℃
10
1
100
125℃
75℃
25℃
10
1
10
100
1000
Collector Current---IC(mA)
1
10000
Saturation Voltage vs Collector Current
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
10000
[email protected]=50IB
100
[email protected]=100IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
10
125℃
75℃
25℃
1000
100
125℃
75℃
25℃
10
10
1
BTN1053M3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 5/8
Typical Characteristics(Cont.)
Capacitance vs Reverse-biased Voltage
On Voltage vs Collector Current
1000
1000
125℃
75℃
Capacitance---(pF)
On Voltage---(mV)
VCE=2V
25℃
Cib
100
Cob
10
100
100
1000
Collector Current---IC(mA)
10000
0.1
1
10
Reverse-biased Voltage---VR(V)
100
Power Derating Curve
Power Dissipation---PD(W)
1.2
1
(Note 2 on page 1)
0.8
0.6
0.4
0.2
0
0
BTN1053M3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTN1053M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN1053M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818M3
Issued Date : 2003.04.04
Revised Date :2013.08.12
Page No. : 8/8
SOT-89 Dimension
Marking:
A
2
1
3
Wafer code
HFE rank
Product
Code
H
C
month code: 1~9,
A,B,C
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ;pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN1053M3
CYStek Product Specification