Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 1/8 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT(MAX) BTN1053M3 75V 2.5A 250mΩ Features • 2W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.15V(typ)@IC=1A, IB=50mA • 5A peak pulse current • Pb-free lead plating and halogen-free package Symbol Outline BTN1053M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation @Ta=25℃ Operating Junction Temperature and Storage Range Symbol VCBO VCEO VEBO IC ICP PD Tj ; Tstg Limits 150 75 5 2.5 5 1 (Note 2) 2 (Note 3) -55~+150 Unit V V V A W °C Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%. 2: When the device is mounted on a FR-4 PCB measuring 15 ×15 ×0.6mm. 3: When the device is mounted on a ceramic substrate measuring 40 ×40 ×0.6mm. BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO ICES IEBO VCE(sat) 1 * VCE(sat) 2 * VCE(sat) 3 * VCE(sat) 4 * VBE(sat) * VBE(on) * hFE 1 * hFE 2 * hFE 3 * hFE 4 * fT Cob Min. 150 150 75 5 270 300 120 10 - Typ. 250 250 100 7.7 0.9 0.9 0.6 0.9 0.95 600 300 25 140 23 Max. 10 10 10 40 200 400 500 1.2 1.2 820 - Unit V V V V nA nA nA mV mV mV mV V V MHz pF Test Conditions IC=100μA IC=100μA IC=10mA IE=100μA VCB=120V VCE=120V VEB=4V IC=200mA, IB=20mA IC=500mA, IB=20mA IC=1A, IB=10mA IC=2A, IB=100mA IC=3A, IB=100mA VCE=2V, IC=3A VCE=2V, IC=10mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=4.5A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% Classification Of hFE 2 Rank S T Range 300~560 390~820 Ordering Information Device BTN1053M3 Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping Marking 1000 pcs / Tape & Reel CB Recommended Storage Condition: Temperature : 10~ 35 °C Humidity : 30~ 60% RH BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.8 2 1mA 0.6 0.5 0.4 500uA 0.3 400uA 300uA 0.2 200uA 0.1 5mA 1.8 Collector Current---IC(A) Collector Current---IC(A) 0.7 1.6 2.5mA 2mA 1.4 1.2 1.5mA 1 0.8 1mA 0.6 0.4 IB=500uA 0.2 IB=100uA 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Emitter Grounded Output Characteristics 4 20mA 3.5 Collector Current---IC(A) 2.5 10mA 6mA 2 4mA 1.5 IB=2mA 1 0.5 50mA 3 20mA 2.5 10mA 2 IB=5mA 1.5 1 0.5 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 10000 10000 VCE=1V 1000 VCE=2V Current Gain---HFE Current Gain---HFE 6 Emitter Grounded Output Characteristics 3 Collector Current---IC(A) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 25℃ 100 75℃ 25℃ 1000 100 75℃ 125℃ 125℃ 10 10 100 BTN1053M3 1000 Collector Current---IC(mA) 10000 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 4/8 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE VCE=5V 1000 125℃ 75℃ 25℃ 100 100 125℃ 75℃ 25℃ 10 1 100 1000 Collector Current---IC(mA) 10000 1 10000 1000 1000 VCESAT@IC=25IB Saturation Voltage---(mV) VCESAT@IC=20IB Saturation Voltage---(mV) 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 100 125℃ 75℃ 25℃ 10 1 100 125℃ 75℃ 25℃ 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 Saturation Voltage vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 1000 10000 VCESAT@IC=50IB 100 VCESAT@IC=100IB Saturation Voltage---(mV) Saturation Voltage---(mV) 10 125℃ 75℃ 25℃ 1000 100 125℃ 75℃ 25℃ 10 10 1 BTN1053M3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 5/8 Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage On Voltage vs Collector Current 1000 1000 125℃ 75℃ Capacitance---(pF) On Voltage---(mV) VCE=2V 25℃ Cib 100 Cob 10 100 100 1000 Collector Current---IC(mA) 10000 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curve Power Dissipation---PD(W) 1.2 1 (Note 2 on page 1) 0.8 0.6 0.4 0.2 0 0 BTN1053M3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN1053M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818M3 Issued Date : 2003.04.04 Revised Date :2013.08.12 Page No. : 8/8 SOT-89 Dimension Marking: A 2 1 3 Wafer code HFE rank Product Code H C month code: 1~9, A,B,C D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ;pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN1053M3 CYStek Product Specification