MTN2304N3

Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 1/9
CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
MTN2304N3
BVDSS
30V
ID@VGS=10V
5A
RDSON(TYP)
VGS=10V, ID=5A
20mΩ
VGS=4.5V, ID=4A
28mΩ
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN2304N3
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN2304N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN2304N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current (Notes 1, 2)
TA=25°C
Maximum Power Dissipation (Note 3)
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
Limits
30
±20
5
4
20
1.38
0.83
-55~+150
Unit
Symbol
Limit
Unit
Rth,ja
90
°C/W
ID
IDM
PD
Tj, Tstg
V
A
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
MTN2304N3
Min.
Typ.
Max.
Unit
30
1.3
-
1.6
20
28
6
2.5
±100
1
10
28
40
-
V
V
nA
μA
μA
-
800
70
71
6
10
24
5
16
3
5
-
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=24V, VGS=0
VDS=24V, VGS=0 ,Tj=70°C
ID=5A, VGS=10V
ID=4A, VGS=4.5V
VDS=10V, ID=4A
pF
VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=1A, VGS=10V
RG=6Ω, RD=15Ω
nC
VDS=15V, ID=5A, VGS=10V
mΩ
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 3/9
CYStech Electronics Corp.
Source-Drain Diode
*VSD
IS
ISM
trr
Qrr
-
29
10
1.3
5
20
-
V
VGS=0V, IS=1.5A
A
VD=VG=0V, VS=1.2V
ns
nC
IF=5A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTN2304N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
16
ID, Drain Current(A)
40
10V
9V
8V
7V
6V
5V
4.5V
4V
18
14
12
10
Drain-Source Breakdown Voltage
BVDSS(V)
20
VGS=3.5V
VGS=3V
8
6
4
VGS=2.5V
38
36
34
32
ID=250μA,
VGS=0V
2
30
0
0
1
2
3
4
5
6
7
8
9
-75
10
25
50
75
100 125
150 175
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
0
Static Drain-Source On-State resistance vs Drain Current
VGS=3V VGS=4V
100
VGS=4.5V
VGS=10V
10
0.001
0.01
0.1
1
ID, Drain Current(A)
10
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
50
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
R DS(on), Static Drain-Source OnState Resistance(mΩ)
-25
Tj, Junction Temperature(°C)
1000
180
160
140
120
100
80
60
ID=5A
ID=4A
40
20
45
40
VGS=4.5V, ID=4A
35
30
25
20
VGS=10V, ID=5A
15
10
0
0
MTN2304N3
-50
VDS, Drain-Source Voltage(V)
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.2
VGS(th), Threshold Voltage-(V)
Capacitance---(pF)
10000
Ciss
1000
C oss
Crss
100
ID=250μA
2
1.8
1.6
1.4
1.2
1
0.8
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
Forward Transfer Admittance vs Drain Current
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
0.1
VDS=10V
Pulsed
Ta=25°C
10
8
VDS=15V
ID=5A
6
4
2
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
6
8
10
12
14
16
6
ID, Maximum Drain Current(A)
ID, Drain Current(A)
4
Maximum Drain Current vs JunctionTemperature
100
10μs
RDS(ON)
Limited
100μs
1ms
1
10ms
100ms
TA=25°C, Tj=150°C,
VGS=10V, RθJA=90°C/W
Single Pulse
DC
5
4
3
2
1
TA=25°C, VGS=10V
0
0.1
1
10
VDS, Drain-Source Voltage(V)
MTN2304N3
2
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
0.01
0.01
60 80 100 120 140 160
12
1
0.1
20 40
Gate Charge Characteristics
10
10
0
Tj, Junction Temperature(°C)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
1.6
PD, Power Dissipation(W)
1.4
Mounted on FR-4 board
with 1 in² pad area
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
Normalized Transient Thermal Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
4.RθJA=27 0°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTN2304N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN2304N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2304N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2011.11.24
Revised Date : 2014.11.10
Page No. : 9/9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
2304
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2304N3
CYStek Product Specification