MTP1406L3

Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTP1406L3
BVDSS
-60V
ID
-4.8A
75mΩ (typ.)
74mΩ (typ.)
99mΩ (typ.)
RDSON@VGS=-10V, ID=-4A
RDSON@VGS=-10V, ID=-1.5A
RDSON@VGS=-4.5V, ID=-2A
Features
 Simple Drive Requirement
 Low On-resistance
 Fast switching Characteristic
 Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-223
MTP1406L3
D
S
G：Gate
D：Drain
S：Source
D
G
Ordering Information
Device
MTP1406L3-0-T3-G
Package
SOT-223
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTP1406L3
CYStek Product Specification
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C
Continuous Drain Current @ TA=70C
Pulsed Drain Current
Total Power Dissipation (TA=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
ID
ID
IDM
Pd
Tj, Tstg
Limits
Unit
-60
±20
-4.8 *1
-3.8 *1
-20 *1
2.7 *2
0.02
-55~+150
V
V
A
A
A
W
W/C
C
*2. Surface mounted on 1 in² copper pad of FR-4 board; 120C/W when mounted on minimum copper pad
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
14
45 (Note)
Unit
C/W
C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board; 120C/W when mounted on minimum copper pad
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
BVDSS
ΔBVDSS/ΔTj
VGS(th)
GFS
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTP1406L3
Min.
Typ.
Max.
Unit
Test Conditions
-60
-1.0
-
-0.04
-1.9
5
75
74
99
-2.5
±100
-1
-25
90
90
120
V
V/C
V
S
nA
μA
μA
VGS=0, ID=-250μA
Reference to 25C, ID=-1mA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-3A
VGS=±20
VDS =-48V, VGS =0
VDS =-48V, VGS =0, Tj=70C
VGS =-10V, ID=-4A
VGS =-10V, ID=-2A
VGS =-4.5V, ID=-2A
-
14
3.2
5.2
10
7
43
25
-
mΩ
nC
ID=-4.8A, VDS=-30V, VGS=-10V
ns
VDS=-30V, ID=-1A,VGS=-10V,
RG=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*trr
*Qrr
-
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 3/9
939
54
39
-
pF
VGS=0V, VDS=-25V, f=1MHz
29
20
-1.2
-
V
ns
nC
IS=-2A, VGS=0V
IS=-4.8A, VGS=0, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended soldering footprint
MTP1406L3
CYStek Product Specification
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
10V
9V
8V
7V
6V
-ID, Drain Current(A)
16
12
5V
4.5V
4V
3.5V
8
-VGS=2.5V
4
80
-BVDSS, Drain-Source Breakdown Voltage
(V)
20
3V
75
70
65
60
50
-100
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
ID=-250μA,
VGS=0V
55
10
Static Drain-Source On-State resistance vs Drain Current
200
1.4
VGS=-3V
-VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
0
50
100
150
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=-4.5V
100
VGS=-10V
10
0.001
VGS=0V
1.2
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
5
10
15
-IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
150
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
-50
360
320
280
ID=-2.4A
240
200
ID=-1.5A
160
120
80
ID=-0.75A
40
VGS=-10V, ID=-2.4A
140
130
120
VGS=-4.5V, ID=-1.7A
110
100
90
80
VGS=-10V, ID=-0.75A
70
60
50
0
0
MTP1406L3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.4
10000
ID=-250μA
-VGS(t h), Threshold Voltage(V)
Capacitance---(pF)
2.2
Ciss
1000
Coss
100
2
1.8
1.6
1.4
1.2
1
0.8
Crss
0.6
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
100
RDS(ON)
Limit
10
-VGS, Gate-Source Voltage(V)
-ID, Drain Current(A)
25
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
10μs
100μs
1
1ms
10ms
0.1
TC=25°C, Tj=150°, VGS=-10V
Single Pulse
100ms
VDS=-30V
ID=-4.8A
8
6
4
2
DC
0
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0
1000
Maximum Drain Current vs Case Temperature
6
35
5
30
4
25
3
2
1
4
8
12
Qg, Total Gate Charge(nC)
16
Typical Transfer Characteristics
-ID, Drain Current(A)
-ID, Maximum Drain Current(A)
0
VDS=-5V
20
15
10
5
TA=25°C, VGS=10V
0
0
25
MTP1406L3
50
75
100
125
150
Tj, Junction Temperature(°C)
175
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
CYStek Product Specification
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Power Derating Curve
10
GFS, Forward Transfer Admittance(S)
PD, Power Dissipation(W)
4
3
2
1
0
0
20
40
60
80
100 120
TA, Ambient Temperature(℃)
160
VDS=-10V
1
0.1
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
200
TJ(MAX) =150°C
TA=25°C
θJA=45°C/W
150
Power (W)
140
VDS=-5V
100
50
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=120°C/W
0.1
0.05
0.02
0.01
0.01
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTP1406L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTP1406L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTP1406L3
CYStek Product Specification
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2014.07.25
Page No. : 9/9
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
Device Name
B
C
1
2
Date Code
1406
□□□□
3
D
E
Style: Pin 1.Gate 2.Drain 3.Source
F
a1
H
I
G
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
o
0
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
o
0
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP1406L3
CYStek Product Specification