Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 1/6 CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BVCEO IC RCESAT(MAX) BTD1857AM3 160V 1.5A 0.3Ω Description • High BVCEO • High current capability • Complementary to BTB1236AM3 • Pb-free lead plating and halogen-free package Symbol Outline BTD1857AM3 SOT-89 B：Base C：Collector E：Emitter B C E Ordering Information Device BTD1857AM3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1857AM3 CYStek Product Specification Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Operating Junction and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm Limits 180 160 5 1.5 3 0.6 1 (Note 1) 2 (Note 2) -55~+150 Unit V V V A A W °C 2 . When mounted on ceramic with area measuring 40×40×1 mm Thermal Characteristics Parameter Symbol Value Unit 208 Thermal Resistance, Junction to Ambient RθJA 125 (Note 1) °C/W 62.5 (Note 2) RθJC Thermal Resistance, Junction to Case Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm °C/W 39.3 2 . When mounted on ceramic with area measuring 40×40×1 mm Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 180 30 - Typ. 140 27 Max. 1 1 0.3 0.3 1.5 390 - Unit V V V µA µA V Ω V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA IC=1A, IB=100mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 1 Rank R Range 180~390 BTD1857AM3 CYStek Product Specification Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Tj=125℃ Saturation Voltage---(mV) Current Gain---HFE VCE=5V 100 Tj=75℃ Tj=25℃ 100 Tj=125℃ Tj=75℃ Tj=25℃ 10 10 1 10 100 1000 Collector Current---IC(mA) 10000 10 Saturation Voltage vs Collector Current 10000 On Voltage vs Collector Current 1000 1000 Tj=25℃ On Voltage---(mV) Saturation Voltage---(mV) Tj=25℃ Tj=125℃ Tj=75℃ Tj=125℃ Tj=75℃ VBE(SAT)@IC=10IB VBE(ON)@VCE=5V 100 100 1 10 100 1000 10000 1 Collector Current---IC(mA) 10 100 1000 10000 Collector Current---IC(mA) Safe Operationg Area Power Derating Curve 10 2.5 1 Power Dissipation---PD(W) PT=1ms Forward Current---IC(A) 100 1000 Collector Current---IC(mA) PT=100ms 0.1 PT=1s 0.01 2 See Note 2 on page 1 1.5 See Note 1 on page 1 1 0.5 0 1 10 100 Forward Voltage---VCE(V) BTD1857AM3 1000 0 50 100 150 200 Case Temperature---TC(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTD1857AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1857AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2013.10.31 Page No. : 6/6 SOT-89 Dimension Marking: month code: 1~9, A,B,C A 2 1 3 Product Code H C Year code : 6→2006, 7→2007,… HFE rank D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1857AM3 CYStek Product Specification