MTD120C10J4

Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 1/13
CYStech Electronics Corp.
N & P-Channel Enhancement Mode Power MOSFET
MTD120C10J4
Features
• Low gate charge
• Simple drive requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
N-CH
P-CH
BVDSS
ID@VGS=10V(-10V), TC=25°C
100V
-100V
9.3A
-12A
ID@VGS=10V(-10V), TA=25°C
RDSON(TYP)@VGS=10V(-10V)
2.0A
122mΩ
-2.5A
91mΩ
RDSON(TYP)@VGS=4.5V(-4.5V)
132mΩ
106mΩ
Outline
MTD120C10J4
TO-252-4L
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(-10V)
Continuous Drain Current @ TC=100°C, VGS=10V(-10V)
Continuous Drain Current @ TA=25°C, VGS=10V(-10V)
Continuous Drain Current @ TA=70°C, VGS=10V(-10V)
Pulsed Drain Current *1
Single Pulse Avalanche Current
Avalanche Energy @ L=0.1mH, ID=IAS, VDD=50V(-50V)
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TA=70℃)
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
VDS
VGS
(Note1)
(Note1)
(Note2)
(Note2)
(Note3)
(Note1)
(Note1)
(Note2)
(Note2)
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
N-channel P-channel
100
±20
9.3
6.6
2.0
1.7
20
9
4
-100
±20
-12.0
-8.5
-2.5
-2.1
-20
-30
58
37.5
18.7
2.4
1.7
-55~+175
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
MTD120C10J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 2/13
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
4
Thermal Resistance, Junction-to-ambient, max (Note2)
62.5
°C/W
Rth,j-a
Thermal Resistance, Junction-to-ambient, max (Note4)
90
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
N-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
100
1.2
-
5.4
122
132
2.4
±100
1
25
160
175
-
8.0
1.0
2.3
5.6
16.6
21.2
16.4
281
42
21
-
-
0.80
19.5
17.9
2.0
8.0
1.3
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=2A
VGS=±20V, VDS=0V
VDS =90V, VGS =0V
VDS =90V, VGS =0V, Tj=125°C
VGS =10V, ID=2A
VGS =4.5V, ID=1.5A
nC
ID=2A, VDS=80V, VGS=10V
ns
VDS=50V, ID=1A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IS=2A, VGS=0V
IF=2A, VGS=0V, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
MTD120C10J4
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 3/13
CYStech Electronics Corp.
P-CH Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg*1
Qgs *1
Qgd *1
td(ON) *1
tr
*1
td(OFF) *1
tf *1
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *2
VSD *1
trr *1
Qrr *1
Min.
Typ.
Max.
-100
-1.2
-
7.1
91
106
-2.4
±100
-1
-25
120
140
-
27
3.8
6.3
10.6
18.4
75.6
65.2
1323
116
58
-
-
-0.75
22.6
24.8
-2.3
-9.2
-1.3
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-10V, ID=-2A
VGS=±20V, VDS=0V
VDS =-80V, VGS =0V
VDS =-80V, VGS =0V, Tj=125°C
VGS =-10V, ID=-2A
VGS =-4.5V, ID=-1.5A
nC
ID=-2A, VDS=-80V, VGS=-10V
ns
VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
pF
VGS=0V, VDS=-25V, f=1MHz
A
V
ns
nC
IS=-2.0A, VGS=0V
IF=-2.0A, VGS=0V, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTD120C10J4-0-T3-G
Package
TO-252-4L
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD120C10J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 4/13
Q1, N-CH Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10
V
9V
8V
7V
6V
16
12
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
20
VGS=4V
8
VGS=3V
4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
VGS=2.5V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=3V
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
100
0.2
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.8
700
R DS(ON), Normalized Static DrainSource On-State Resistance
800
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
ID=2A
600
500
400
300
200
100
VGS=10V, ID=2A
2.4
RDS(ON) @Tj=25°C : 122mΩ typ.
2
1.6
1.2
VGS=4.5V, ID=1.5A
RDS(ON) @Tj=25°C : 132mΩ typ.
0.8
0.4
0
0
MTD120C10J4
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 5/13
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
75 100 125 150 175 200
Gate Charge Characteristics
100
10
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25 50
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
6
4
2
VDS=80V
ID=2A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
10
4
6
8
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2.5
100
ID, Maximum Drain Current(A)
RDS(ON)
Limit
10
ID, Drain Current(A)
0
100μ s
1
1ms
10ms
100ms
0.1
1s
TA=25°C, Tj=175°C, VGS=10V
RθJA=90°C/W,Single Pulse
0.01
DC
2
1.5
1
TA=25°C, VGS=10V
RθJA=90°C/W
0.5
0
0.001
0.1
MTD120C10J4
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 6/13
CYStech Electronics Corp.
Q1, N-CH Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
50
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
VDS=10V
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
40
12
Power (W)
ID, Drain Current (A)
16
8
4
30
20
10
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.Rθ JA=90 °C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Maximum Drain Current vs Case Temperature
ID, Maximum Drain Current(A)
12
10
8
6
4
Tj(max)=175°C,VGS=4.5V
RθJC=4°C/W
2
0
25
MTD120C10J4
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 7/13
CYStech Electronics Corp.
Q2, P-CH Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
20
-I D, Drain Current (A)
16
-10V, -9V, -8V, -7V, -6V, -5V, -4V
12
VGS=-3V
8
4
VGS=-2.5V
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
2
4
6
8
-VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1000
1.2
VGS=-3V
-VSD , Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
VGS=0V
VGS=-4.5V
100
VGS=-10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
R DS(on) , Normalized Static Drain-Source
On-State Resistance
600
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
ID=-2A
500
2
400
300
200
100
2.4
2.2
2
VGS=-10V, ID=-2A
RDS(ON) @Tj=25°C : 91mΩ typ.
1.8
1.6
1.4
1.2
1
0.8
VGS=-4.5V, ID=-1.5A
RDS(ON) @Tj=25°C : 106mΩ typ.
0.6
0.4
0
0
MTD120C10J4
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 8/13
Q2, P-CH Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
1.2
ID=-1mA
1
0.8
0.6
ID=-250μ A
Crss
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
10
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25 50 75 100 125 150 175 200
Gate Charge Characteristics
100
10
1
VDS=-10V
Pulsed
TA=25°C
8
6
4
2
VDS=-80V
ID=-2A
0
0.1
0.01
0.1
1
-ID, Drain Current(A)
0
10
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3
-I D, Maximum Drain Current(A)
100
RDS(ON)
Limit
10
-I D, Drain Current(A)
0
Tj, Junction Temperature(°C)
100μ s
1
1ms
10ms
100ms
1s
0.1
TA=25°C, Tj=175C, VGS=-10V
θJA=90°C/W, Single Pulse
0.01
DC
2.5
2
1.5
1
TA=25°C, VGS=-10V
RθJA=90°C/W
0.5
0
0.001
0.1
MTD120C10J4
1
10
100
-ID, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 9/13
CYStech Electronics Corp.
Q2, P-CH Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
50
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
VDS=-10V
TJ(MAX) =175°C
TA=25°C
θJA=90°C/W
40
12
Power (W)
-I D, Drain Current (A)
16
8
4
30
20
10
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
0
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized EffectiveTransient Thermal
Resistance
1
D=0.5
0.2
1.Rθ JA(t)=r(t)*Rθ JA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*Rθ JA(t)
4.Rθ JA=90 °C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Maximum Drain Current vs Case Temperature
-I D, Maximum Drain Current(A)
14
12
10
8
6
4
Tj(max)=175°C, VGS=-4.5V
RθJC=4°C/W
2
0
25
MTD120C10J4
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 10/13
Reel Dimension
Carrier Tape Dimension
MTD120C10J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 11/13
Recommended soldering footprint
Unit : mm
MTD120C10J4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 12/13
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD120C10J4
CYStek Product Specification
Spec. No. : C986J4
Issued Date : 2014.12.05
Revised Date :
Page No. : 13/13
CYStech Electronics Corp.
TO-252-4L Dimension
Marking:
Tab
Device Name
Date code
D120
C10
□□□□
Style: Pin 1.Soure 1 2.Gate 1 3.&Tab
Drain 1& Drain 2 4. Source 2 5. Gate 2
4-Lead TO-252-4L Plastic Surface Mount Package
CYStek Package Code: J4
Inches
Min.
Max.
0.0866 0.0945
0.0000 0.0059
0.0157 0.0236
0.0199 0.0315
0.2047 0.2165
0.0177 0.0217
0.2126 0.2283
0.1799
-
DIM
A
A1
b
b2
b3
c2
D
D1
Millimeters
Min.
Max.
2.20
2.40
0.00
0.15
0.40
0.60
0.50
0.80
5.20
5.50
0.45
0.55
5.40
5.80
4.57
-
DIM
E
E1
e
F
H
L
L1
L4
Inches
Min.
Max.
0.2520 0.2677
0.1500
0.0500 REF
0.0157 0.0236
0.3701 0.4016
0.0551 0.0697
0.0945 0.1181
0.0315 0.0472
Millimeters
Min.
Max.
6.40
6.80
3.81
1.27 REF
0.40
0.60
9.40
10.20
1.40
1.77
2.40
3.00
0.80
1.20
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD120C10J4
CYStek Product Specification