Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 1/ 7 CYStech Electronics Corp. 20V N-Channel Logic Level Enhancement Mode MOSFET MTN2306ZN3 Features 20V ID VGS=10V, ID=5A 6A 28mΩ VGS=4.5V, ID=5A 30mΩ VGS=2.5V, ID=2.6A 40mΩ VGS=1.8V, ID=1A 60mΩ RDSON(MAX) • VDS=20V RDS(ON)=30mΩ@VGS=4.5V, ID=5A RDS(ON)=40mΩ@VGS=2.5V, ID=2.6A • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating package Equivalent Circuit BVDSS Outline MTN2306ZN3 SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor ESD susceptibility (Note 4) Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 20 ±8 6 4 24 1.38 0.01 2600 90 -55~+150 Unit V V A A A W W/°C V °C/W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. MTN2306ZN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 2/ 7 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. 4. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr Min. Typ. Max. Unit 20 0.4 - 13 19.5 23 30 45 1.2 ±10 1 25 28 30 40 60 V V S μA μA μA - 474 77.3 59.3 6 20 20 3 8.5 1.5 3.2 800 15 - - 14 7 1.2 - mΩ Test Conditions VGS=0, ID=250μA VDS=VGS, ID=250μA VDS=5V, ID=5A VGS=±8V, VDS=0 VDS=20V, VGS=0 VDS=20V, VGS=0, Tj=70°C VGS=10V, ID=5A VGS=4.5V, ID=5A VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A pF VDS=20V, VGS=0, f=1MHz ns VDS=15V, ID=5A, VGS=10V, RG=3.3Ω, RD=3Ω nC VDS=16V, ID=5A, VGS=4.5V V ns nC VGS=0V, IS=1.2A IS=5A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN2306ZN3 MTN2306ZN3 Package SOT-23 (Pb-free lead plating package) Shipping Marking 3000 pcs / Tape & Reel 2306 . CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 3/ 7 Typical Characteristics Reverse Drain Current vs Source-Drain Voltage Typical Output Characteristics 1.2 5V 4.5V 4V 2.5V 18 Drain Current - ID(A) 16 14 Source-Drain Voltage-VSD(V) 20 2V 12 10 8 VGS=1.5V 6 4 1 Tj=25°C 0.8 Tj=125°C 0.6 0.4 2 0.2 0 0 2 4 6 Drain-Source Voltage -VDS(V) 0 8 2 4 6 8 Reverse Drain Current -IDR(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State resistance vs Drain Current 10000 60 Static Drain-Source On-State Resistance-RDS(ON)(mΩ) Static Drain-Source On-State Resistance-RDS(on)(mΩ) VGS=4.5V, ID=5A VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V VGS=10V 1000 100 20 0 10 0.001 0.01 0.1 1 Drain Current-ID(A) -60 10 20 60 100 140 Junction Temperature-Tj(°C) 180 0.8 100 Threshold Voltage-VGS(th)(V) 90 80 70 60 50 40 ID=5A 30 -20 Threshold Voltage vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance-RDS(ON)(mΩ) 40 20 ID=250uA 0.7 0.6 0.5 0.4 0.3 10 0.2 0 0 MTN2306ZN3 2 4 6 8 Gate-Source Voltage-VGS(V) 10 -60 -20 20 60 100 140 Junction Temperature-Tj(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 4/ 7 Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 10 0.1 MTN2306ZN3 1 10 Drain-Source Voltage -VDS(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 5/ 7 Reel Dimension Carrier Tape Dimension MTN2306ZN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 6/ 7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN2306ZN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582N3 Issued Date : 2011.08.30 Revised Date : Page No. : 7/ 7 SOT-23 Dimension Marking: A L 3 B TE 2306. S 2 1 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 G V Style: Pin 1.Gate 2.Source 3.Drain C D K H J *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.95 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN2306ZN3 CYStek Product Specification