MTB4D0N03ATV8

Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03ATV8
BVDSS
ID @ VGS=10V
VGS=10V, ID=15A
RDSON(TYP)
VGS=4.5V, ID=12A
Features
30V
15A
4.7mΩ
6.7mΩ
 Single Drive Requirement
 Low On-resistance
 Fast Switching Characteristic
 Dynamic dv/dt rating
 Repetitive Avalanche Rated
 Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB4D0N03ATV8
DFN3×3
Pin 1
G：Gate
D：Drain S：Source
Ordering Information
Device
MTB4D0N03ATV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03ATV8
CYStek Product Specification
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
VDS
VGS
IDM
30
±20
43
27
15
12
140 *1
Avalanche Energy @ L=0.1mH, ID=43A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
EAS
EAR
92.5
4.9
mJ
21
8.4
2.5 *2
1.6 *2
W
ID
TC=25℃
TC=100℃
TA=25℃
TA=70℃
Total Power Dissipation
PD
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
V
A
C
-55~+150
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6
50 *2
Unit
C/W
C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Rg
MTB4D0N03ATV8
Min.
Typ.
Max.
30
1
-
1.8
25
4.7
6.7
2.0
±100
1
25
7.0
10
-
1511
299
208
30
4.6
9.3
4.3
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=15A
VGS=±20V
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125C
VGS =10V, ID=15A
VGS =4.5V, ID=12A
pF
VDS=15V, VGS=0V, f=1MHz
nC
VDS=15V, VGS=10V, ID=15A
Ω
VDS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 3/9
Characteristics (TC=25C, unless otherwise specified)
Symbol
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
-
Typ.
8
11
28
13
Max.
-
-
0.81
14
7
4
16
1.2
-
Unit
ns
Test Conditions
VDS=15V, ID=15A, VGS=10V, RGS=3Ω
A
V
ns
nC
IS=15A, VGS=0V
IF=15A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
140
10V,9V,8V,7V,6V,5V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
120
100
VGS=4V
80
60
VGS=3.5V
40
VGS=3V
20
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
-75 -50 -25
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=3V
10
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
VGS=10V
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
VGS=10V, ID=15A
ID=15A
2
160
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1.6
120
1.2
80
0.8
40
0.4
0
0
MTB4D0N03ATV8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
RDSON @ Tj=25°C : 4.7 mΩ typ
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VG S(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
Coss
100
Crss
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=15V
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
8
VDS=10V
6
VDS=5V
4
2
ID=15A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
20
24
Qg, Total Gate Charge(nC)
28
32
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
18
1000
16
10
100μs
1
1ms
10ms
100ms
TA=25°C, Tj=150°C
VGS=10V, RθJA=50°C/W
Single Pulse
0.1
ID, Maximum Drain Current(A)
RDSON
Limite
100
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1s
DC
14
12
10
8
6
4
TA=25°C, VGS=10V, RθJA=50°C/W
2
0
0.01
0.1
MTB4D0N03ATV8
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
100
140
VDS=10V
120
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
80
100
Power (W)
ID, Drain Current(A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
80
60
60
40
40
20
20
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8
Issued Date : 2014.05.22
Revised Date :
Page No. : 9/9
DFN3×3 Dimension
Marking:
D D
Date
Code
D D
B4D0N
03AT
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Inches
Min.
Max.
0.0276
0.0354
0.0000
0.0197
0.0094
0.0138
0.0039
0.0079
0.1280
0.1339
0.1201
0.1280
0.0945
0.1024
DIM
A
A1
b
c
D
D1
D2
Millimeters
Min.
Max.
0.70
0.90
0.00
0.50
0.24
0.35
0.10
0.20
3.25
3.40
3.05
3.25
2.40
2.60
DIM
E
E1
e
H
L
L1
L2
Inches
Min.
Max.
0.1181
0.1260
0.0531
0.0610
0.0256 BSC
0.1260
0.1339
0.0118
0.0197
0.0039
0.0079
0.0445 REF
Millimeters
Min.
Max.
3.00
3.20
1.35
1.55
0.65 BSC
3.20
3.40
0.30
0.50
0.10
0.20
1.13 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB4D0N03ATV8
CYStek Product Specification