BTN1053I3

Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 1/7
CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BVCEO
IC
RCESAT(MAX)
BTN1053I3
80V
2.5A
150mΩ
Features
• Excellent HFE Characteristics up to 1A
• Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA
• 5A peak pulse current
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTN1053I3
TO-251
B:Base
C:Collector
E:Emitter
B C E
B C
Ordering Information
Device
BTN1053I3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec,UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
BTN1053I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Operating Junction Temperature and Storage Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj ; Tstg
Limits
150
80
6
2.5
5
1.5
10
-55~+150
Unit
V
V
V
A
W
°C
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VCE(sat) 5 *
VBE(sat) *
VBE(on) *
hFE 1
*
hFE 2
*
hFE 3
*
hFE 4
*
fT
Cob
Min.
150
150
80
6
300
300
120
30
-
Typ.
250
250
110
7.4
28
80
270
110
210
0.9
0.9
570
550
300
100
140
23
Max.
100
100
100
40
150
400
250
300
1.2
1.2
820
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
Test Conditions
IC=100μA
IC=100μA
IC=10mA
IE=100μA
VCB=150V
VCE=150V
VEB=5V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=1A, IB=50mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTN1053I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.8
2
1mA
Collector Current---IC(A)
Collector Current---IC(A)
0.6
0.5
0.4
500uA
0.3
400uA
300uA
0.2
200uA
0.1
5mA
1.8
0.7
1.6
2.5mA
2mA
1.4
1.2
1.5mA
1
0.8
1mA
0.6
0.4
IB=500uA
0.2
IB=100uA
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
Emitter Grounded Output Characteristics
4
20mA
3.5
Collector Current---IC(A)
2.5
10mA
6mA
2
4mA
1.5
IB=2mA
1
0.5
50mA
3
20mA
2.5
10mA
2
IB=5mA
1.5
1
0.5
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
Current Gain vs Collector Current
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
10000
10000
VCE=1V
1000
VCE=2V
Current Gain---HFE
Current Gain---HFE
6
Emitter Grounded Output Characteristics
3
Collector Current---IC(A)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
25℃
100
75℃
25℃
1000
100
75℃
125℃
125℃
10
10
100
BTN1053I3
1000
Collector Current---IC(mA)
10000
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 4/7
Typical Characteristics(Cont.)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
[email protected]=10IB
Saturation Voltage---(mV)
Current Gain---HFE
VCE=5V
1000
125℃
75℃
25℃
100
100
125℃
75℃
25℃
10
1
100
1000
Collector Current---IC(mA)
10000
1
10000
1000
1000
[email protected]=25IB
Saturation Voltage---(mV)
[email protected]=20IB
Saturation Voltage---(mV)
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
100
125℃
75℃
25℃
10
1
100
125℃
75℃
25℃
10
1
10
100
1000
Collector Current---IC(mA)
1
10000
Saturation Voltage vs Collector Current
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
10000
[email protected]=50IB
100
[email protected]=100IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
10
125℃
75℃
25℃
1000
100
125℃
75℃
25℃
10
10
1
BTN1053I3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 5/7
Typical Characteristics(Cont.)
Capacitance vs Reverse-biased Voltage
On Voltage vs Collector Current
1000
1000
75℃
125℃
Capacitance---(pF)
On Voltage---(mV)
VCE=2V
25℃
Cib
100
Cob
10
100
100
1000
Collector Current---IC(mA)
0.1
10000
1
10
Reverse-biased Voltage---VR(V)
Power Derating Curve
1.4
12
1.2
10
Power Dissipation---PD(W)
Power Dissipation---PD(W)
Power Derating Curve
1
0.8
0.6
0.4
8
6
4
0.2
2
0
0
0
25
50
75
100
125
150
Ambient Temperature---TA(℃)
BTN1053I3
100
175
200
0
25
50
75
100
125
150
175
200
CaseTemperature---TC(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN1053I3
CYStek Product Specification
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 7/7
CYStech Electronics Corp.
TO-251 Dimension
A
B
Marking:
C
D
G
F
3
K
E
Device Name
N1053
Date Code
□□□□
I
H
2
1
J
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
*: Typical
Inches
Min.
Max.
0.0177
0.0217
0.0354
0.0591
0.0177
0.0236
0.0866
0.0945
0.2441
0.2677
0.2677
0.2835
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
0.90
1.50
0.45
0.60
2.20
2.40
6.20
6.80
6.80
7.20
DIM
G
H
I
J
K
Inches
Min.
Max.
0.2559
*0.1811
0.0449
0.0346
0.2047
0.2165
Millimeters
Min.
Max.
6.50
*4.60
1.14
0.88
5.20
5.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN1053I3
CYStek Product Specification