Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BVCEO IC RCESAT(MAX) BTN1053I3 80V 2.5A 150mΩ Features • Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA • 5A peak pulse current • Pb-free lead plating and halogen-free package Symbol Outline BTN1053I3 TO-251 B：Base C：Collector E：Emitter B C E B C Ordering Information Device BTN1053I3-0-UA-G Package TO-251 (Pb-free lead plating and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name BTN1053I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Operating Junction Temperature and Storage Range Symbol VCBO VCEO VEBO IC ICP PD Tj ; Tstg Limits 150 80 6 2.5 5 1.5 10 -55~+150 Unit V V V A W °C Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 12.5 83.3 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCES BVCEO BVEBO ICBO ICES IEBO VCE(sat) 1 * VCE(sat) 2 * VCE(sat) 3 * VCE(sat) 4 * VCE(sat) 5 * VBE(sat) * VBE(on) * hFE 1 * hFE 2 * hFE 3 * hFE 4 * fT Cob Min. 150 150 80 6 300 300 120 30 - Typ. 250 250 110 7.4 28 80 270 110 210 0.9 0.9 570 550 300 100 140 23 Max. 100 100 100 40 150 400 250 300 1.2 1.2 820 - Unit V V V V nA nA nA mV mV mV mV mV V V MHz pF Test Conditions IC=100μA IC=100μA IC=10mA IE=100μA VCB=150V VCE=150V VEB=5V IC=200mA, IB=20mA IC=500mA, IB=20mA IC=1A, IB=10mA IC=1A, IB=50mA IC=2A, IB=100mA IC=1A, IB=50mA VCE=2V, IC=3A VCE=2V, IC=10mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% BTN1053I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.8 2 1mA Collector Current---IC(A) Collector Current---IC(A) 0.6 0.5 0.4 500uA 0.3 400uA 300uA 0.2 200uA 0.1 5mA 1.8 0.7 1.6 2.5mA 2mA 1.4 1.2 1.5mA 1 0.8 1mA 0.6 0.4 IB=500uA 0.2 IB=100uA 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Emitter Grounded Output Characteristics 4 20mA 3.5 Collector Current---IC(A) 2.5 10mA 6mA 2 4mA 1.5 IB=2mA 1 0.5 50mA 3 20mA 2.5 10mA 2 IB=5mA 1.5 1 0.5 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current 10000 10000 VCE=1V 1000 VCE=2V Current Gain---HFE Current Gain---HFE 6 Emitter Grounded Output Characteristics 3 Collector Current---IC(A) 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 25℃ 100 75℃ 25℃ 1000 100 75℃ 125℃ 125℃ 10 10 100 BTN1053I3 1000 Collector Current---IC(mA) 10000 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 4/7 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCESAT@IC=10IB Saturation Voltage---(mV) Current Gain---HFE VCE=5V 1000 125℃ 75℃ 25℃ 100 100 125℃ 75℃ 25℃ 10 1 100 1000 Collector Current---IC(mA) 10000 1 10000 1000 1000 VCESAT@IC=25IB Saturation Voltage---(mV) VCESAT@IC=20IB Saturation Voltage---(mV) 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 100 125℃ 75℃ 25℃ 10 1 100 125℃ 75℃ 25℃ 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 Saturation Voltage vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 1000 10000 VCESAT@IC=50IB 100 VCESAT@IC=100IB Saturation Voltage---(mV) Saturation Voltage---(mV) 10 125℃ 75℃ 25℃ 1000 100 125℃ 75℃ 25℃ 10 10 1 BTN1053I3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 5/7 Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage On Voltage vs Collector Current 1000 1000 75℃ 125℃ Capacitance---(pF) On Voltage---(mV) VCE=2V 25℃ Cib 100 Cob 10 100 100 1000 Collector Current---IC(mA) 0.1 10000 1 10 Reverse-biased Voltage---VR(V) Power Derating Curve 1.4 12 1.2 10 Power Dissipation---PD(W) Power Dissipation---PD(W) Power Derating Curve 1 0.8 0.6 0.4 8 6 4 0.2 2 0 0 0 25 50 75 100 125 150 Ambient Temperature---TA(℃) BTN1053I3 100 175 200 0 25 50 75 100 125 150 175 200 CaseTemperature---TC(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN1053I3 CYStek Product Specification Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 7/7 CYStech Electronics Corp. TO-251 Dimension A B Marking: C D G F 3 K E Device Name N1053 Date Code □□□□ I H 2 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN1053I3 CYStek Product Specification