MTN3418CN3

CYStech Electronics Corp.
N-CHANNEL MOSFET
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 1/7
BVDSS
ID
RDSON(max) @VGS=10V
RDSON(max) @VGS=4V
MTN3418CN3
30V
1.4A
300mΩ
450mΩ
Description
The MTN3418CN3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(2V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package
Symbol
Outline
MTN3418CN3
D
SOT-23
D
G
S
G
G：Gate
S：Source
D：Drain
S
Ordering Information
Device
MTN3418CN3
MTN3418CN3
Package
SOT-23
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
MCX
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
IDP
PD
Continuous
Pulsed
Drain Current
Limits
30
±20
1.4
5.6
*1
900
*2
700
*3
+150
-55~+150
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Unit
V
V
A
A
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm
*3. Human body model, 1.5kΩ in series with 100pF
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Rth,ja
139 (Note)
Thermal Resistance, Junction-to-Case
Rth,jc
80
Unit
°C/W
Note : When the device is mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm.
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
30
1
400
GFS
Dynamic
Ciss
Coss
Crss
Source-Drain Diode
*VSD
-
220
220
300
325
-
2.5
±10
500
300
300
450
450
-
60
16
9
-
Unit
V
V
μA
nA
Test Conditions
mS
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
ID=700mA, VGS=10V
ID=1.4A, VGS=10V
ID=400mA, VGS=4V
ID=1.4A, VGS=4V
VDS=10V, ID=700mA
-
pF
VDS=10V, VGS=0, f=1MHz
1.2
V
VGS=0V, ISD=1.4A
mΩ
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTN3418CN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 3/7
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
500
2.2
2
ID, Drain Current(A)
1.8
RDS(on) , Static Drain-Source On-state
Resistance(mΩ)
10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V, 3.5V
VGS=3V
1.6
1.4
VGS=2.5V
1.2
1
0.8
0.6
VGS=2V
0.4
450
ID=1.4A, VGS=4V
400
350
300
250
ID=1.4A, VGS=10V
0.2
200
0
0
1
2
3
4
5
6
7
8
9
0
10
50
100
150
TA, Ambient Temperature(°C)
VDS, Drain-Source Voltage(V)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
10
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
9
TA=25°C
ID, Drain Current(A)
8
VGS=4V
VGS=10V
7
6
5
4
3
2
1
0
100
1
10
100
1000
ID, Drain Current(mA)
0
10000
400
IF, Forward Drain Current(mA)
TA=25°C
ID=1.4A
350
300
250
200
150
100
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
9
10
10000
500
450
1
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on), Static Drain-Source OnState Resistance(mΩ)
200
Tj=25°C
VGS=0V
1000
100
10
50
1
0
0
MTN3418CN3
2
4
6
8
10
VGS , Gate-Source Voltage(V)
12
0.4
0.6
0.8
1
1.2
VSD, Source Drain Voltage(V)
1.4
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 4/7
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Capacitance vs Reverse Voltage
100
GFS, Forward Transfer Admittance---(S)
10
Capacitance-(pF)
Ciss
Coss
10
Crss
f=1MHz
VDS=10V
1
0.1
0.01
1
0
5
10
15
20
25
VDS , Drain-to-Source Voltage(V)
1
30
10
100
Drain Current---ID(mA)
Power Derating Curve
Maximum Safe Operating Area
1000
10
Power Dissipation---PD(mW)
ID, Drain Current (A)
900
100μs
RDS(ON) Limited
1ms
1
10ms
100ms
0.1
Ta=25°C, Single pulse, mounted
on a ceramic
board(900mm² ×0.8mm)
DC
Mounted on a ceramic board
(900mm² ×0.8mm)
800
700
600
500
400
300
200
100
0
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
0
100
200
60
1.5
BVDSS, Drain-Source Breakdown
Voltage(V)
1.6
VDS=10V
ID=1mA
1.4
1.3
1.2
1.1
1
55
50
45
40
35
30
0.9
25
0.8
-100
20
-100
MTN3418CN3
50
100
150
Ambient Temperature---TA(℃)
Brekdown Voltage vs Ambient Temperature
Gate Threshold Voltage vs Ambient Temperature
VGS(th) , Gate SourceThreshold Voltage-(V)
1000
-50
0
50
100
150
Junction Temperature-Tj(°C)
200
ID=250μA,
VGS=0V
-50
0
50
100
150
Tj, Junction Temperature(°C)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN3418CN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN3418CN3
CYStek Product Specification
Spec. No. : C570N3
Issued Date : 2012.02.03
Revised Date : 2012.07.30
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
L
3
B
Date Code
MCX
S
□□
Marking:
A
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
J
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN3418CN3
CYStek Product Specification