BTD1768S3

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1768S3
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 1/6
BVCEO
IC
RCESAT(MAX)
80V
1A
0.5Ω
Description
The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free package
Symbol
Outline
BTD1768S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
180
80
7
1
2 (Note)
200
625
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 2%.
BTD1768S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT) 1
*VCE(SAT) 2
*VBE(SAT)
*VBE(ON)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
80
7
0.6
180
60
20
-
Typ.
0.15
0.3
0.96
0.66
250
6
Max.
100
100
0.3
0.5
1.2
0.7
560
15
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=180V, IE=0
VEB=7V, IC=0
IC=500mA, IB=20mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 1
Rank
R
S
Range
180~390
270~560
Ordering Information
Device
BTD1768S3
BTD1768S3
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 3/6
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
VCE=5V
Saturation Voltage-(mV)
Current Gain---HFE
HFE
100
VCE=2V
VCE=1V
10
IC=25IB
100
IC=10IB
10
1
10
100
Collector Current ---IC(mA)
1000
1
Saturation Voltage vs Collector Current
10
100
Collector Current ---IC(mA)
1000
On Voltage vs Collector Current
10000
10000
[email protected]=20IB
[email protected]=2V
On Voltage-(mV)
Saturation Voltage-(mV)
IC=20IB
1000
1000
100
100
1
10
100
1000
10000
Collector Current--- IC(mA)
1
10
100
1000
Collector Current--- IC(mA)
10000
Power Derating Curve
Power Dissipation---PD(W)
0.25
0.2
0.15
0.1
0.05
0
0
BTD1768S3
25
50
75 100 125 150
Ambient Temperature---TA(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTD1768S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD1768S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304S3
Issued Date : 2009.11.19
Revised Date :
Page No. : 6/6
SOT-323 Dimension
Marking:
3
A
Q
A1
1
C
TE
AJ
Lp
2
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
2 mm
1
Style: Pin 1.Base 2.Emitter 3.Collector
scale
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768S3
CYStek Product Specification