CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1768S3 Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 1/6 BVCEO IC RCESAT(MAX) 80V 1A 0.5Ω Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free package Symbol Outline BTD1768S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD RθJA Tj Tstg Limits 180 80 7 1 2 (Note) 200 625 -55~+150 -55~+150 Unit V V V A A mW °C/W °C °C Note : Pulse test, PW ≤ 10ms, Duty ≤ 2%. BTD1768S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(SAT) 1 *VCE(SAT) 2 *VBE(SAT) *VBE(ON) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 180 80 7 0.6 180 60 20 - Typ. 0.15 0.3 0.96 0.66 250 6 Max. 100 100 0.3 0.5 1.2 0.7 560 15 Unit V V V nA nA V V V V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=180V, IE=0 VEB=7V, IC=0 IC=500mA, IB=20mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=50mA VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 1 Rank R S Range 180~390 270~560 Ordering Information Device BTD1768S3 BTD1768S3 Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT VCE=5V Saturation Voltage-(mV) Current Gain---HFE HFE 100 VCE=2V VCE=1V 10 IC=25IB 100 IC=10IB 10 1 10 100 Collector Current ---IC(mA) 1000 1 Saturation Voltage vs Collector Current 10 100 Collector Current ---IC(mA) 1000 On Voltage vs Collector Current 10000 10000 VBESAT@IC=20IB VBEON@VCE=2V On Voltage-(mV) Saturation Voltage-(mV) IC=20IB 1000 1000 100 100 1 10 100 1000 10000 Collector Current--- IC(mA) 1 10 100 1000 Collector Current--- IC(mA) 10000 Power Derating Curve Power Dissipation---PD(W) 0.25 0.2 0.15 0.1 0.05 0 0 BTD1768S3 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTD1768S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1768S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304S3 Issued Date : 2009.11.19 Revised Date : Page No. : 6/6 SOT-323 Dimension Marking: 3 A Q A1 1 C TE AJ Lp 2 detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v A 2 mm 1 Style: Pin 1.Base 2.Emitter 3.Collector scale Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1768S3 CYStek Product Specification