BTC2412N3

CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTC2412N3
Description
• The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose switching
application.
• Low Cob. Typ. Cob=2.0pF
• Complementary to BTA1037N3 .
• Pb-free lead plating and halogen-free package
• AEC-Q101 qualified.
Symbol
Outline
SOT-23
BTC2412N3
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTC2412N3-XX-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
60
50
7
200
225
556
150
-55~+150
V
V
V
mA
mW
°C/W
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(ON)
*hFE
fT
Cob
Min.
60
50
7
0.5
180
80
-
Typ.
0.1
0.2
0.9
0.64
180
2
Max.
100
100
0.3
0.4
1.2
0.7
560
3.5
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
RA
SA
Range
180~390
270~560
BTC2412N3
CYStek Product Specification
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Output Characteristics
Output Characteristics
0.2
Collector Current---IC(A)
Collector Current---IC(A)
0.15
IB=500uA
IB=400uA
0.1
IB=300uA
IB=200uA
0.05
IB=100uA
0
IB=2.5mA
IB=2mA
0.16
IB=1.5mA
0.14
IB=1mA
0.12
IB=0.5mA
0.1
0.08
0.06
0.04
IB=0
0.02
IB=0
0
0.18
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Output Characteristics
6
Output Characteristics
0.35
0.6
IB=10mA
IB=8mA
0.25
0.5
Collector Current---IC(A)
Collector Current---IC(A)
0.3
IB=6mA
IB=4mA
0.2
IB=2mA
0.15
0.1
IB=25mA
IB=20mA
0.4
IB=15mA
IB=10mA
0.3
IB=5mA
0.2
0.1
0.05
IB=0
IB=0
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
Current Gain vs Collector Current
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Current Gain---HFE
Saturation Voltage---(mV)
[email protected]=6V
100
10
100
0.1
BTC2412N3
1
10
100
Collector Current --- IC(mA)
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 4/7
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---FT(MHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=12V
100
10
100
0.1
1
10
100
Collector Current --- IC(mA)
0.1
1000
10
100
Collector Current --- IC(mA)
Power Derating Curve
Capacitance Characteristics
250
100
200
f=1MHz
Capacitance---(pF)
Power Dissipation---PD(mW)
1
150
100
Cib
10
50
Cob
0
1
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
0.1
1
10
Reverse-biased Voltage---(V)
100
Recommended Soldering Footprint
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTC2412N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2412N3
CYStek Product Specification
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2014.09.22
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2412N3
CYStek Product Specification