CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2412N3 Description • The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose switching application. • Low Cob. Typ. Cob=2.0pF • Complementary to BTA1037N3 . • Pb-free lead plating and halogen-free package • AEC-Q101 qualified. Symbol Outline SOT-23 BTC2412N3 B：Base C：Collector E：Emitter Ordering Information Device BTC2412N3-XX-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTC2412N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO VEBO IC Pd RθJA Tj Tstg 60 50 7 200 225 556 150 -55~+150 V V V mA mW °C/W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(ON) *hFE fT Cob Min. 60 50 7 0.5 180 80 - Typ. 0.1 0.2 0.9 0.64 180 2 Max. 100 100 0.3 0.4 1.2 0.7 560 3.5 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=50μA VCB=60V VEB=7V IC=50mA, IB=5mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank RA SA Range 180~390 270~560 BTC2412N3 CYStek Product Specification Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Output Characteristics Output Characteristics 0.2 Collector Current---IC(A) Collector Current---IC(A) 0.15 IB=500uA IB=400uA 0.1 IB=300uA IB=200uA 0.05 IB=100uA 0 IB=2.5mA IB=2mA 0.16 IB=1.5mA 0.14 IB=1mA 0.12 IB=0.5mA 0.1 0.08 0.06 0.04 IB=0 0.02 IB=0 0 0.18 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Output Characteristics 6 Output Characteristics 0.35 0.6 IB=10mA IB=8mA 0.25 0.5 Collector Current---IC(A) Collector Current---IC(A) 0.3 IB=6mA IB=4mA 0.2 IB=2mA 0.15 0.1 IB=25mA IB=20mA 0.4 IB=15mA IB=10mA 0.3 IB=5mA 0.2 0.1 0.05 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Current Gain---HFE Saturation Voltage---(mV) HFE@VCE=6V 100 10 100 0.1 BTC2412N3 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 100 1000 Collector Current --- IC(mA) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 4/7 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---FT(MHZ) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB FT@VCE=12V 100 10 100 0.1 1 10 100 Collector Current --- IC(mA) 0.1 1000 10 100 Collector Current --- IC(mA) Power Derating Curve Capacitance Characteristics 250 100 200 f=1MHz Capacitance---(pF) Power Dissipation---PD(mW) 1 150 100 Cib 10 50 Cob 0 1 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) 0.1 1 10 Reverse-biased Voltage---(V) 100 Recommended Soldering Footprint BTC2412N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC2412N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2412N3 CYStek Product Specification Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2014.09.22 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2412N3 CYStek Product Specification