Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1184J3 BVCEO IC RCESAT -50V -3A 130mΩ Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package Symbol Outline BTB1184J3 B：Base C：Collector E：Emitter TO-252(DPAK) B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj,Tstg Limits -60 -50 -6 -3 -7 *1 1 15 *2 125 8.33 *2 -55~+150 Unit V V V A W °C/W °C *2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger. BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. -60 -50 -6 120 180 80 - Typ. -0.26 -0.96 80 35 Max. -1 -1 -0.5 -1.2 560 - Unit V V V μA μA V V MHz pF Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.1A VCE=-2V, IC=-20mA VCE=-3V, IC=-500mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range R 180~390 S 270~560 Ordering Information Device HFE rank Package Shipping BTB1184J3-R-T3-G R BTB1184J3-S-T3-G S TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Recommended soldering footprint BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain---HFE VCE=3V VCE=2V 100 VCE=1V VCESAT@IC=50IB 100 10 VCESAT=30IB VCESAT=20IB 10 1 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 10000 10000 On Voltage---VBEON(mV) Saturation Voltage---(mV) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current VBESAT@IC=10IB 1000 100 VBEON@VCE=2V 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve Power Derating Curve 16 1.2 14 1 Power Dissipation---PD(W) Power Dissipation---PD(W) 100 1000 Collector Current---IC(mA) 0.8 0.6 0.4 0.2 12 10 8 6 4 2 0 0 0 BTB1184J3 20 40 60 80 100 120 Ambient Temperature---TA(℃) 140 160 0 20 40 60 80 100 120 Ambient Temperature---TA(℃) 140 160 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1184J3 CYStek Product Specification Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2010.12.08 Page No. : 6/6 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name B1184 HFE Rank □ □□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 Date Code 3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1184J3 CYStek Product Specification