BTB1184J3

Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 1/6
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1184J3
BVCEO
IC
RCESAT
-50V
-3A
130mΩ
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTD1760J3
• RoHS compliant package
Symbol
Outline
BTB1184J3
B:Base
C:Collector
E:Emitter
TO-252(DPAK)
B
C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj,Tstg
Limits
-60
-50
-6
-3
-7
*1
1
15
*2
125
8.33 *2
-55~+150
Unit
V
V
V
A
W
°C/W
°C
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-60
-50
-6
120
180
80
-
Typ.
-0.26
-0.96
80
35
Max.
-1
-1
-0.5
-1.2
560
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-0.1A
IC=-2A, IB=-0.1A
VCE=-2V, IC=-20mA
VCE=-3V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
R
180~390
S
270~560
Ordering Information
Device
HFE rank
Package
Shipping
BTB1184J3-R-T3-G
R
BTB1184J3-S-T3-G
S
TO-252 (Pb-free lead plating and
halogen-free package)
2500 pcs / Tape & Reel
Recommended soldering footprint
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
VCE=3V
VCE=2V
100
VCE=1V
[email protected]=50IB
100
10
VCESAT=30IB
VCESAT=20IB
10
1
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
10000
10000
On Voltage---VBEON(mV)
Saturation Voltage---(mV)
10000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
[email protected]=10IB
1000
100
[email protected]=2V
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
Power Derating Curve
16
1.2
14
1
Power Dissipation---PD(W)
Power Dissipation---PD(W)
100
1000
Collector Current---IC(mA)
0.8
0.6
0.4
0.2
12
10
8
6
4
2
0
0
0
BTB1184J3
20
40
60
80 100 120
Ambient Temperature---TA(℃)
140
160
0
20
40
60
80 100 120
Ambient Temperature---TA(℃)
140
160
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1184J3
CYStek Product Specification
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2010.12.08
Page No. : 6/6
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B1184
HFE
Rank
□ □□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
Date
Code
3
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1184J3
CYStek Product Specification