BTD2040N3S

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2040N3S
BVCEO
IC
RCESAT
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 1/6
25V
1A
0.31Ω(typ.)
Features
• The BTD2040N3S is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTD2040N3S
SOT-23
C
B：Base
C：Collector
E：Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Limits
45
25
6
1
2 (Note)
225
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
Note : Single pulse, Pw=10ms
BTD2040N3S
CYStek Product Specification 1
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*RCE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
45
25
6
150
40
82
100
-
Typ.
40
0.15
0.25
0.31
6
Max.
0.5
0.5
60
0.3
0.5
0.62
1
450
-
Unit
V
V
V
μA
μA
mV
V
V
Ω
V
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=2mA, IB=0
IE=100μA, IC=0
VCB=30V, IE=0
VEB=6V, IC=0
IC=50mA, IB=2.5mA
IC=400mA, IB=20mA
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=2V, IC=50mA
VCE=5V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD2040N3S
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
Marking
3000 pcs / Tape & Reel
BS
Moisture Sensitivity Level : Conform to JEDEC Level 1
Recommended Storage Condition:
Temperature : ≤ 30 °C
Humidity : ≤ 60% RH
BTD2040N3S
CYStek Product Specification 2
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 3/6
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.35
1.4
1mA
Collector Current---IC(A)
Collector Current---IC(A)
5mA
1.2
0.3
0.25
0.2
500uA
400uA
300uA
0.15
0.1
200uA
0.05
1
0.8
2.5mA
2mA
0.6
1.5mA
0.4
0.2
IB=100uA
0
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
Current Gain---HFE
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
Current Gain---HFE
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
VCE=2V
VCE=1V
10
10
1
10
100
1000
Collector Current---IC(mA)
1
10000
Current Gain vs Collector Current
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
1000
VCESAT@IC=20IB
Saturation Voltage---(mV)
1000
Current Gain---HFE
6
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCE=5V
10
10
1
BTD2040N3S
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification 3
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 4/6
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCESAT@IC=100IB
100
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT@IC=50IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
10000
10000
On Voltage---(mV)
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
Collector Current---IC(mA)
1000
100
100
1
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
VBEON@VCE=1V
VBESAT@IC=50IB
Saturation Voltage---(mV)
10000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
1
10000
10
100
1000
Collector Current---IC(mA)
10000
Cutoff Frequency vs Collector Current
Capacitance vs Reverse-biased Voltage
1000
100
Cutoff Frequency---fT(MHz)
Cib
Capacitance---(pF)
100
1000
Collector Current---IC(mA)
10
Cob
VCE=10V
100
10
1
0.1
BTD2040N3S
1
10
Reverse-biased Voltage---VR(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification 4
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 5/6
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTD2040N3S
CYStek Product Specification 5
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 6/6
Reel Dimension
Carrier Tape Dimension
BTD2040N3S
CYStek Product Specification 6
CYStech Electronics Corp.
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 7/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD2040N3S
CYStek Product Specification 7
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 8/6
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
Product Code
BS
3
B
S
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style : Pin 1.Base 2.Emitter 3.Collector
J
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2040N3S
CYStek Product Specification 8