MTN6515J3

CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN6515J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=5V, ID=10A
RDS(ON)@VGS=3V, ID=3A
150V
20A
60mΩ(typ)
59mΩ(typ)
60mΩ(typ)
Features
 Low Gate Charge
 Simple Drive Requirement
 Pb-free lead plating package
Equivalent Circuit
Outline
MTN6515J3
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C
Continuous Drain Current @ TC=100C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
150
±16
20
14
60
20
5
2.5
60
30
-55~+175
Pd
Tj, Tstg
Unit
V
A
mJ
W
C
*2. Duty cycle ≤ 1%
MTN6515J3
CYStek Product Specification
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 2/9
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
100
Unit
C/W
C/W
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
Min.
Typ.
Max.
Unit
150
0.45
-
0.8
60
59
60
48
1.20
±100
1
25
75
75
75
-
V
V
nA
-
30
4.8
16
23
22
91
63
2282
120
66
-
-
0.85
50
120
20
60
1.3
-
μA
mΩ
S
Test Conditions
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VGS=±12, VDS=0
VDS =120V, VGS =0
VDS =100V, VGS =0, TJ=125C
VGS =10V, ID=15A
VGS =5V, ID=10A
VGS =3V, ID=3A
VDS =5V, ID=10A
nC
ID=10A, VDS=80V, VGS=5V
ns
VDS=75V, ID=1A, VGS=4.5V, RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTN6515J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 3/9
Ordering Information
Device
MTN6515J3-0-T3-S
Package
TO-252
(Pb-free lead plating package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
Recommended soldering footprint
MTN6515J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
60
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V,5V,4V,3V
ID, Drain Current (A)
50
40
30
VGS=2V
20
10
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=1.5V
VGS=1.8V
100
VGS=2.5V
VGS=3V
VGS=4.5V
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
200
ID=15A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
160
120
80
40
2
VGS=10V, ID=15A
1.6
1.2
0.8
0.4
RDS(ON) @Tj=25°C : 60 mΩ
0
0
0
MTN6515J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=80V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=10
0.1
Ta=25°C
Pulsed
0.01
0.001
8
VDS=50V
6
4
2
ID=10A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
10
20
30
40
Qg, Total Gate Charge(nC)
50
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
25
100
ID, Maximum Drain Current(A)
100μs
RDSON
Limited
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
1ms
10
10ms
100ms
1s
1
DC
0.1
TC=25°C, Tj=175°C
VGS=10V, θJC=2.5°C/W
Single Pulse
20
15
10
5
VGS=10V, RθJC=2.5°C/W
0
0.01
0.1
MTN6515J3
1
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
150
TC , Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 6/9
Typical Characteristics (Cont.)
Power Derating Curve
Typical Transfer Characteristics
80
70
70
50
PD, Power Dissipation(W)
ID, Drain Current(A)
60
VDS=10V
40
30
20
60
50
40
30
20
10
10
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
0
25
50
75
100 125 150
TC, Case Temperature(℃)
175
200
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTN6515J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN6515J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3C/second max.
(Tsmax to Tp)
Preheat
100C
−Temperature Min(TS min)
−Temperature Max(TS max)
150C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
Time within 5C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6C/second max.
6 minutes max.
Time 25 C to peak temperature
Pb-free Assembly
3C/second max.
150C
200C
60-180 seconds
217C
60-150 seconds
260 +0/-5 C
20-40 seconds
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN6515J3
CYStek Product Specification
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2014.07.07
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
N6515
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead : Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN6515J3
CYStek Product Specification