BCP56L3

CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BCP56L3
Description
General purpose mainly intended for use in medium power industrial application and for audio amplifier
output stage.
Features
• High collector current and low VCE(SAT)
• Complement to BCP53L3
• Pb-free package
Symbol
Outline
BCP56L3
SOT-223
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation @TC=25℃
Operating Junction Temperature Range
Storage Temperature Range
BCP56L3
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
100
80
5
1
1.5
2
-55~+150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
100
80
5
100
100
45
-
Typ.
0.15
125
-
Max.
100
100
0.3
0.6
1.2
1.0
400
10
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=10mA
IE=10μA
VCB=80V
VEB=5V
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
-16
100~250
-25
160~400
Ordering Information
Device
BCP56L3
BCP56L3
Package
SOT-223
(Pb-free)
Shipping
Marking
2500 pcs / Tape & Reel
AJ
CYStek Product Specification
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
VCE=5V
Saturation Voltage-(mV)
Current Gain---HFE
HFE
100
VCE=2V
VCE=1V
10
IC=25IB
100
IC=10IB
10
1
10
100
Collector Current ---IC(mA)
1000
1
Saturation Voltage vs Collector Current
1000
10000
[email protected]=10IB
[email protected]=2V
On Voltage-(mV)
Saturation Voltage-(mV)
10
100
Collector Current ---IC(mA)
On Voltage vs Collector Current
10000
1000
1000
100
100
1
10
100
1000
10000
1
Collector Current--- IC(mA)
Typical Cutoff Current Characteristics
10
100
1000
Collector Current--- IC(mA)
10000
Transition Frequency vs Collector Current
1000
1000
Tj=150°C
Transition Frequency---fT(MHz)
C-B Cutoff Current---ICBO(nA)
IC=20IB
100
10
100
10
0
BCP56L3
20
40
60
80
Collector Base Voltage-- VCB(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(W)
2.5
2
1.5
1
0.5
0
0
BCP56L3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BCP56L3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BCP56L3
CYStek Product Specification
Spec. No. : C304L3
Issued Date : 2007.05.04
Revised Date :2012.02.22
Page No. : 7/7
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
B
Device Code
C
1
2
Date Code
3
D
E
AJ
□□
Style: Pin 1.Base 2.Collector 3.Emitter
F
H
G
a1
I
a2
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
*: Typical
Inches
Min.
Max.
0.1142
0.1220
0.2638
0.2874
0.1299
0.1457
0.0236
0.0315
*0.0906
0.2480
0.2638
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
2.90
3.10
6.70
7.30
3.30
3.70
0.60
0.80
*2.30
6.30
6.70
DIM
G
H
I
a1
a2
Inches
Min.
Max.
0.0551
0.0709
0.0098
0.0138
0.0008
0.0039
*13o
0o
10 o
Millimeters
Min.
Max.
1.40
1.80
0.25
0.35
0.02
0.10
*13o
0o
10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BCP56L3
CYStek Product Specification