BTC4505M3

Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 1/6
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505M3
Features
 High breakdown voltage, BVCEO (min)=400V.
 Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA.
 Complementary to BTA1759M3.
 Pb-free lead plating and halogen-free package.
Symbol
Outline
BTC4505M3
SOT-89
B：Base
C：Collector
E：Emitter
B C
E
Ordering Information
Device
BTC4505M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 2/6
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limit
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
500
400
6
300
600
150
-55~+150
V
V
V
mA
mW
C
C
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat)
VCE(sat)
*VCE(sat)
*VBE(sat)
hFE
hFE
hFE
hFE
fT
Cob
Min.
500
400
6
80
120
100
40
-
Typ.
0.08
0.08
0.14
0.68
20
7
Max.
100
100
100
0.15
0.15
0.25
0.75
270
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=500V, IE=0
VCE=500V, VBE=0
VEB=6V, IC=0
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
Recommended soldering footprint
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
HFE@VCE=10V
Saturation Voltage-(mV)
Current G ain---HFE
1000
100
VCESAT@IC=10IB
1000
100
10
10
0.1
1
10
100
0.1
1000
10
100
1000
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Saturation Voltage vs Collector Current
700
Power Dissipation---PD(mW)
10000
Saturation Voltage-(mV)
1
VBESAT@IC=10IB
1000
600
500
400
300
200
100
0
100
0.1
1
10
100
Collector Current--- IC(mA)
BTC4505M3
1000
0
50
100
150
200
Ambient Temperature---TA(℃ )
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC4505M3
CYStek Product Specification
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2014.07.24
Page No. : 6/6
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
Date Code
□□
3
3D
2
1
H
C
Date Code
D
B
E
I
F
Style: Pin 1. Base 2. Collector 3. Emitter
G
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505M3
CYStek Product Specification