MTN2328M3

CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN2328M3
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 1/8
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=4.5V, ID=3A
100V
3A
130mΩ(typ)
136mΩ(typ)
Description
The MTN2328M3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• High speed switching
• Low-voltage drive
• Easily designed drive circuits
• Pb-free lead plating package
Symbol
Outline
SOT-89
MTN2328M3
G：Gate
S：Source
D：Drain
GD D S
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=100°C
Pulsed Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
ID
IDM
PD
Tj; Tstg
Limits
100
±20
3
1.9
12 *1
2.1 *2
-55~+150
Unit
V
V
A
A
A
W
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper.
MTN2328M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 2/8
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
60
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board.
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS*
VGS(th)
IGSS
IDSS
RDS(ON)*
Min.
Typ.
Max.
Unit
100
1
-
1.8
130
136
5
2.5
±100
1
150
160
-
V
V
nA
μA
1188
30
17
7
3.2
29
5
18.4
4
7.5
-
45
70
3
12
1.2
-
GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
Test Conditions
S
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=100V, VGS=0
ID=3A, VGS=10V
ID=3A, VGS=4.5V
VDS=10V, ID=3A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=50V, ID=3A, VGS=10V, RGEN=6Ω
nC
VDS=50V, ID=3A, VGS=10V
mΩ
A
V
ns
nC
VGS=0V, IS=3A
IF=3A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
MTN2328M3
MTN2328M3
Package
SOT-89
(Pb-free lead plating package)
Shipping
Marking
1000 pcs / Tape & Reel
2328
CYStek Product Specification
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 3/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
140
ID, Drain Current(A)
18
BVDSS, Drain-Source Breakdown
Voltage(V)
20
4V,4.5V,6V,7V,8V,10V
16
14
VGS=3.5V
12
10
8
6
4
VGS=3V
125
120
115
110
ID=250μA,
VGS=0V
100
-100
0
1
130
105
2
0
135
2
3
4
VDS , Drain-Source Voltage(V)
5
Static Drain-Source On-State resistance vs Drain Current
0
50
100
150
Tj, Junction Temperature(°C)
200
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=2.5V
VGS=3V
VGS=4.5V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
VGS=10V
100
0.001
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
200
190
ID=3A
180
170
160
150
140
130
120
110
100
0
MTN2328M3
2
4
6
8
VGS, Gate-Source Voltage(V)
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
10
300
280
260
240
220
200
180
160
140
120
100
80
60
VGS=10V, ID=3A
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.4
VGS(th), Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
100
C oss
ID=250μA
2.2
2
1.8
1.6
1.4
1.2
Crss
1
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
180
Gate Charge Characteristics
10
10
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
VDS=50V
ID=3A
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
Maximum Safe Operating Area
4
8
12
16
Qg, Total Gate Charge(nC)
20
Typical Transfer Characteristics
100
20
VDS=10V
18
16
RDS(ON) Limit
10
10μs
100μs
ID, Drain Current (A)
ID, Drain Current(A)
20
1ms
1
10ms
0.1
100m
TA=25°C, Tj=150°, VGS=10V
Single Pulse
DC
14
12
10
8
6
4
2
0
0.01
0.1
MTN2328M3
1
10
100
VDS , Drain-Source Voltage(V)
1000
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 5/8
Typical Characteristics(Cont.)
Maximum Drain Current vs Junction Temperature
3.5
ID, Maximum Drain Current(A)
3
2.5
2
1.5
1
0.5
TA=25°C, VGS=10V
0
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
0.1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJA(t)
4.RθJA=60°C/W
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN2328M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTN2328M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2328M3
CYStek Product Specification
Spec. No. : C583M3
Issued Date : 2012.01.12
Revised Date : 2013.08.11
Page No. : 8/8
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
H
C
Date Code
2328
□□□□
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
DIM
A
B
C
D
E
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2328M3
CYStek Product Specification