Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 1/7 CYStech Electronics Corp. PNPN Epitaxial Planar SCR BCR1002N3 Descriptions The BCR1002N3 is designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • Practical level triggering and holding characteristics • On state current rating of 0.2ARMS • Sensitive gate allows triggering by microcontrollers and other logic circuits • Pb-free package Symbol Outline BCR1002N3 SOT-23 A G：Gate A：Anode K：Cathode K G Ordering Information Device BCR1002N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BCR1002N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 2/7 Absolute Maximum Ratings (TJ=25°C) Parameter Peak Repetitive Off-State Voltage @TJ=-40℃ to 125℃, RGK=1KΩ On-State Current @TC=80℃ Average On-State Current @ TC=80℃ Reverse Peak Gate Voltage @TA=25℃, Pulse Width≤1μs Forward Peak Gate Current @TA=25℃, Pulse Width≤1μs Forward Average Gate Power @ TA=25℃, t=8.3ms Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol Limits Unit VDRM 140 V IT(RMS) IT(AV) VGRM IGM PG(AV) RθJA RθJC Tj Tstg 350 220 8 500 100 556 208 -40~+125 -40~+150 mA mA V mA mW °C/W °C/W °C °C Note : Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. VDRM can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however , positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. Characteristics (Ta=25°C) Symbol IDRM IDRM *VTM IGT IH IL VGT dV/dt dI/dt BCR1002N3 Min. Typ. Max. Unit Test Conditions 25 30 - 100 10 1.5 100 5 6 0.8 - μA μA V μA mA mA V V/μs A/μs VD=140V, RGK=1KΩ, TC=125℃ VD=140V, RGK=1KΩ, TC=25℃ ITM=200mA VD=7V, RL=100Ω VD=7V, RGK=1KΩ VD=7V, IG=200μA VD=7V, RL=100Ω VD=35V, RGK=1KΩ IG=10mA, dIG/dt=100mA/μs, PW=10μs *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% CYStek Product Specification CYStech Electronics Corp. Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 3/7 Recommended Soldering Footprint BCR1002N3 CYStek Product Specification Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics Gate Trigger Current vs Junction Temperature Gate Trigger Voltage vs Junction Temperature 1 Gate Trigger Voltage---VGT(V) Gate Trigger Current---I GT(μA) 70 60 50 40 30 20 10 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 -50 -25 0 25 50 75 100 -50 125 -25 JunctionTemperature---TJ(℃) 100 125 Latching Current vs Junction Temperature Holding Current vs Junction Temperature 1000 Latching Current---I L(μA) 10 Holding Current---I H(mA) 0 25 50 75 Junction Temperature---TJ(°C) 1 100 10 0.1 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Junction Temperature---TJ(°C) Junction Temperature---TJ(°C) On-state Characteristics Instantaneous On-state Current---IT (mA) 1000 TJ=125°C TJ=25°C 100 TJ=-40°C 10 0 0.4 0.8 1.2 1.6 2 Instantaneous On-state Voltage---VT(V) BCR1002N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BCR1002N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BCR1002N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C700N3 Issued Date : 2008.02.25 Revised Date :2014.01.24 Page No. : 7/7 SOT-23 Dimension Marking: A 3 Device Code B S Date Code 2 1 G V CR TE XX L 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Cathode 2.Gate 3.Anode D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BCR1002N3 CYStek Product Specification