MEN09N03BJ3

Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 1/8
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MEN09N03BJ3
BVDSS
ID
RDSON(MAX)
30V
50A
9mΩ
Features
• VDS=30V, ID=50A, RDS(ON)=9mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
Symbol
• Repetitive Avalanche Rated
• Fast Switching Characteristic
Outline
MEN09N03BJ3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MEN09N03BJ3-0-T3-G
Package
TO-252
(RoHS compliant and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Power Dissipation (TC=25℃)
Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
30
±20
50
35
140 *1
37.5
70
15
*2
60
32
-55~+175
V
V
A
A
A
A
mJ
mJ
W
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle≤1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
ID(ON)
*RDS(ON)
Dynamic
Rg
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
MEN09N03BJ3
Min.
Typ.
Max.
Unit
30
1.0
50
-
1.7
20
7
10
3.0
±100
1
25
9
15
V
V
S
-
1.7
23
13
4.6
10
-
nA
μA
A
mΩ
Test Conditions
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =10V, VDS=10V
VGS =10V, ID=25A
VGS =5V, ID=20A
Ω
VGS=15mV, VDS=0, f=1MHz
nC
ID=25A, VDS=15V, VGS=10V
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*IRM(REC)
*Qrr
-
8
6
30
8
1638
176
141
-
-
22
180
12
50
140
1.3
-
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 3/8
ns
VDS=15V, ID=25A, VGS=10V,
RG=2.7Ω, RD=0.6Ω
pF
VGS=0V, VDS=15V, f=1MHz
A
V
ns
A
nC
IF=IS, VGS=0
IF=IS, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
50
BVDSS, Drain-Source Breakdown
Voltage(V)
120
6V,7V,8V,9V,10V
ID, Drain Current(A)
100
5V
80
VGS=4V
60
40
VGS=2V
VGS=3V
45
40
35
30
ID=250μA,
VGS=0V
25
20
20
0
0
2
4
6
8
VDS , Drain-Source Voltage(V)
-60
10
Static Drain-Source On-State resistance vs Drain Current
180
1.2
100
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
VGS=4.5V
10
VGS=10V
1
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0.1
1
10
ID, Drain Current(A)
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
100
90
ID=25A
80
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
70
60
50
40
30
20
10
16
14
VGS=10V, ID=25A
12
10
8
6
4
2
0
0
0
MEN09N03BJ3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 5/8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2
VGS(th), Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
ID=250μA
1.8
1.6
1.4
1.2
1
f=1MHz
0.8
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
20
Forward Transfer Admittance vs Drain Current
ID=25A
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
140
10
10
1
VDS=10V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
VDS=15V
VDS=10V
6
VDS=5V
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
20
Qg, Total Gate Charge(nC)
25
30
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
ID, Maximum Drain Current(A)
1000
ID, Drain Current(A)
100
Gate Charge Characteristics
100
100
60
Tj, Junction Temperature(°C)
10μs
RDS(ON) Limit
10
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj=175°C
VGS=10V
Single Pulse
1
50
40
30
20
10
0
0.1
0.01
MEN09N03BJ3
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 6/8
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 7/8
Reel Dimension
Carrier Tape Dimension
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 8/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MEN09N03BJ3
CYStek Product Specification
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2013.12.26
Page No. : 9/8
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
09N03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MEN09N03BJ3
CYStek Product Specification