CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2030N3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package Symbol Outline BTC2030N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTC2030N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTC2030N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD PD RθJA RθJC Tj Tstg Limits 280 200 6 1 0.5 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V A A mW mW °C/W °C/W °C °C Note : Free air condition Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 280 200 6 100 100 10 75 - Typ. 0.2 - Max. 100 100 0.1 0.2 0.5 0.95 0.9 320 10 Unit V V V nA nA V V V V V MHz pF Test Conditions IC=100μA IC=10mA IE=10μA VCB=250V VEB=6V IC=100mA, IB=10mA IC=250mA, IB=25mA IC=500mA, IB=50mA IC=250mA, IB=25mA VCE=5V, IC=250mA VCE=5V, IC=1mA VCE=5V, IC=200mA VCE=5V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTC2030N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 3/7 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage---(V) Current Gain---HFE VCESAT VCE=5V 100 VCE=2V 1000 IC=20IB 100 IC=10IB 10 10 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) 1000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBESAT@IC=10IB 100 VBEON@VCE=5V 100 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 Power Derating Curve Power Dissipation---PD(W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 BTC2030N3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 4/7 Recommended Soldering Footprint BTC2030N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC2030N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2030N3 CYStek Product Specification Spec. No. : C316N3 Issued Date : 2008.01.15 Revised Date : 2013.10.31 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code CB Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2030N3 CYStek Product Specification