BTC2030N3

CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 1/7
General Purpose NPN Epitaxial Planar Transistor
BTC2030N3
Features
• High breakdown voltage, BVCEO≥ 200V
• Large continuous collector current capability
• Low collector saturation voltage
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTC2030N3
SOT-23
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTC2030N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC2030N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
280
200
6
1
0.5
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
A
A
mW
mW
°C/W
°C/W
°C
°C
Note : Free air condition
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
280
200
6
100
100
10
75
-
Typ.
0.2
-
Max.
100
100
0.1
0.2
0.5
0.95
0.9
320
10
Unit
V
V
V
nA
nA
V
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=10mA
IE=10μA
VCB=250V
VEB=6V
IC=100mA, IB=10mA
IC=250mA, IB=25mA
IC=500mA, IB=50mA
IC=250mA, IB=25mA
VCE=5V, IC=250mA
VCE=5V, IC=1mA
VCE=5V, IC=200mA
VCE=5V, IC=1A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTC2030N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 3/7
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
Saturation Voltage---(V)
Current Gain---HFE
VCESAT
VCE=5V
100
VCE=2V
1000
IC=20IB
100
IC=10IB
10
10
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
1000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
On Voltage---(mV)
Saturation Voltage---(mV)
1000
[email protected]=10IB
100
[email protected]=5V
100
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
Power Dissipation---PD(W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
BTC2030N3
50
100
150
Case Temperature---TC(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 4/7
Recommended Soldering Footprint
BTC2030N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTC2030N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2030N3
CYStek Product Specification
Spec. No. : C316N3
Issued Date : 2008.01.15
Revised Date : 2013.10.31
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
CB
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2030N3
CYStek Product Specification