MTD140P15J3

CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTD140P15J3
BVDSS
ID
RDS(ON)@VGS=-10V, ID=-12A
RDS(ON)@VGS=-4.5V, ID=-10A
-150V
-15A
141mΩ(typ)
175mΩ(typ)
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTD140P15J3
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTD140P15J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD140P15J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=-10V, TC=25°C
Continuous Drain Current @VGS=-10V, TC=100°C
Continuous Drain Current @VGS=-10V, TA=25°C
Continuous Drain Current @VGS=-10V, TA=70°C
Pulsed Drain Current
TC=25℃
TC=100℃
Power Dissipation
TA=25℃
TA=70℃
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Symbol
Limits
VDS
VGS
-150
±20
-15
-10.6
-2.4
-1.9
-60
100
50
2
1.3
225
-15
-55~+175
(Note1)
(Note1)
(Note4)
ID
(Note4)
(Note3)
(Note1)
(Note1)
(Note2)
(Note2)
IDM
PD
PDSM
EAS
IAS
Tj, Tstg
Unit
V
A
W
mJ
A
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
1.5
Thermal Resistance, Junction-to-ambient, max (Note2)
62.5
°C/W
Rth,j-a
Thermal Resistance, Junction-to-ambient, max (Note4)
90
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
MTD140P15J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 3/9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
-150
∆BVDSS/∆Tj
VGS(th)
-1.0
GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*VSD
*IS
*trr
*Qrr
-
Typ.
Max.
Unit
Test Conditions
-0.12
-2.5
18
141
175
-3.0
±100
-1
-25
185
230
V
V/°C
V
S
nA
VGS=0V, ID=-250μA
Reference to 25°C, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-5V, ID=-12A
VGS=±20V
VDS =-120V, VGS =0V
VDS =-120V, VGS =0V, Tj=70°C
VGS =-10V, ID=-12A
VGS =-4.5V, ID=-10A
51
11
21
14
16
37
24
2473
122
75
2.9
-
-0.84
70
245
-1.2
-15
-
μA
mΩ
nC
VDS=-120V, ID=-12A, VGS=-10V
ns
VDS=-75V, VGS=-10V, ID=-12A ,
RG=3.3Ω
pF
VGS=0V, VDS=-25V, f=1MHz
Ω
f=1MHz
V
A
ns
nC
IS=-12A, VGS=0V
IS=-12A, VGS=0, dI/dt=-100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTD140P15J3
CYStek Product Specification
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
45
40
-ID, Drain Current(A)
35
30
-BVDSS, Normalized Drain-Source
Breakdown Voltage
10V
9V
8V
7V
6V
-VGS=5V
25
20
15
10
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
-VGS=4V
5
0.4
0
0
4
8
12
16
-VDS, Drain-Source Voltage(V)
-75 -50 -25
20
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
450
-VSD, Source-Drain Voltage(V)
RDS(ON) , Static Drain-Source On-State
Resistance(mΩ)
500
400
350
300
250
200
-VGS=4.5V
150
100
-VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
50
0.2
0
0.01
0.1
1
10
-ID, Drain Current(A)
0
100
2
4
6
8
-IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
450
R DS(ON), Normalized Static DrainSource On-State Resistance
500
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-12A
400
350
300
250
200
150
100
50
VGS=-10V, ID=-12A
1.6
1.2
0.8
RDS(ON) @Tj=25°C : 141mΩ typ
0.4
0
0
MTD140P15J3
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
f=1MHz
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
10
0
-75 -50 -25
30
10
20
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
50
75 100 125 150 175
10
-VGS , Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
25
Gate Charge Characteristics
100
10
1
VDS=-5V
Pulsed
Ta=25°C
0.1
8
6
4
VDS=-120V
ID=-12A
2
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
10
0
100
Maximum Safe Operating Area
10
20
30
40
Qg, Total Gate Charge(nC)
50
60
Maximum Drain Current vs Case Temperature
100
18
RDS(ON)
Limited
100μs
-ID, Maximum Drain Current(A)
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
1ms
10
10ms
100ms
1s
1
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=1.5°C/W,
single pulse
DC
0.1
16
14
12
10
8
6
4
VGS=-10V, Tj(max)=175°C,
RθJC=1.5°C/W, single pulse
2
0
0.1
MTD140P15J3
1
10
100
-VDS, Drain-Source Voltage(V)
1000
25
50
75
100 125
150
TC, Case Temperature(°C)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
3000
45
2000
VDS=-10V
40
TJ(MAX) =175°C
TC=25°C
θJC=1.5°C/W
-ID, Drain Current(A)
Power (W)
2500
1500
1000
35
30
25
20
15
10
500
5
0
0.001
0
0.01
0.1
1
Pulse Width(s)
10
100
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
Power Derating Curve
2.5
See Note 2 on page 2.
PD, Power Dissipation(W)
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
TA Ambient Temperature(℃)
150
175
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=1.5°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTD140P15J3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTD140P15J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD140P15J3
CYStek Product Specification
Spec. No. : C946J3
Issued Date : 2014.02.17
Revised Date : 2015.03.02
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
D140
P15
Device
Name
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD140P15J3
CYStek Product Specification