CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTNA06N3 Description • The BTNA06N3 is designed for use in general purpose amplification and switching application. • High current , IC = 0.5A • Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA • Complementary to BTPA56N3. • Pb-free lead plating and halogen-free package Symbol Outline BTNA06N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature BTNA06N3 Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 150 80 7 500 225 150 -55~+150 Unit V V V mA mW °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 150 80 7 100 100 100 Typ. - Max. 100 100 100 0.25 1.2 - Unit V V V nA nA nA V V MHz Test Conditions IC=100μA IC=1mA IE=100μA VCB=120V VCE=60V VEB=7V IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTNA06N3-0-T1-G BTNA06N3 Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 3/6 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 100 Saturation Voltage---(mV) Current Gain---HFE VCE = 5V VCE = 2V VCE = 1V 10 VCE(SAT) @IC=20IB 100 VCE(SAT) @IC=10IB 10 1 10 100 Collector Current---IC(mA) 1000 1 Saturation Voltage vs Collector Current 10 100 Collector Current---IC(mA) 1000 On Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBE(SAT) @IC=10IB VBE(ON) @VCE=1V 100 100 1 10 100 1000 1 10 100 1000 Collector Current---IC(mA) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTNA06N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTNA06N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTNA06N3 CYStek Product Specification Spec. No. : C216N3 Issued Date : 2003.10.07 Revised Date :2012.10.25 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: A L Product Code 3 B 1G S Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style : Pin 1.Base 2.Emitter 3.Collector J *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA06N3 CYStek Product Specification