MTB090N06N3

Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
60V N-CHANNEL Enhancement Mode MOSFET
MTB090N06N3
BVDSS
ID
RDSON@VGS=10V, ID=3A
RDSON@VGS=4.5V, ID=2A
60V
3.9A
77mΩ(typ)
86mΩ(typ)
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTB090N06N3
SOT-23
D
S
G：Gate
S：Source
D：Drain
G
Ordering Information
Device
MTB090N06N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB090N06N3
CYStek Product Specification
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3)
Maximum Power Dissipation@ TA=70℃ (Note 3)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
IDM
PD
Limits
60
±20
3.9
3.1
16
1.25
Tj ; Tstg
0.8
-55~+150
ID
Unit
V
A
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance, Junction-to-Ambient, max
RθJA
100
°C/W
Thermal Resistance, Junction-to-Case, max
RθJC
70
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
MTB090N06N3
Min.
Typ.
Max.
Unit
Test Conditions
60
1.0
-
1.5
77
86
2.3
2.5
±100
1
10
100
115
-
V
V
nA
S
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=48V, VGS=0V
VDS=48V, VGS=0V (Tj=85°C)
ID=3A, VGS=10V
ID=2A, VGS=4.5V
VDS=15V, ID=1A
-
504
20
18
5
3
23
10
-
pF
VDS=30V, VGS=0, f=1MHz
ns
VDS=30V, ID=1A, VGS=10V, RG=1Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
-
6
1.7
1.6
-
-
0.8
3.9
16
1.2
nC
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 3/9
VDS=30V, ID=3.9A, VGS=10V
A
V
VGS=0V, IF=2.3A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTB090N06N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
16
ID, Drain Current(A)
14
10V,9V,8V,7V,6V,5V,4V
12
10
8
6
VGS=3V
4
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
2
0.4
0
0
1
2
3
4
VDS , Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1000
100
VGS = 3V
4.5V
10V
10
0.001
Tj=25°C
1
0.8
0.6
Tj=150°C
0.4
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
240
2.4
200
R DS(ON), Normalized Static DrainSource On-State Resistance
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=3A
160
120
80
40
VGS=10V, ID=3A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 77mΩ typ.
0.4
0
0
MTB090N06N3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
0
10
0.1
1
10
VDS , Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
10
10
VDS=48V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=15V
Pulsed
Ta=25°C
0.01
0.001
8
VDS=30V
6
4
2
ID=3.9A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
6
Qg, Total Gate Charge(nC)
8
4.5
ID, Maximum Drain Current(A)
100
10
2
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
0
RDS(ON)
Limit
100μs
1
1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=10V
RθJA=100°C/W, Single Pulse
100ms
DC
MTB090N06N3
0.1
1
10
100
VDS, Drain-Source Voltage(V)
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=10V, RθJA=100°C/W
0.5
0
0.01
0.01
4
1000
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
16
9
TJ(MAX) =150°C
TA=25°C
RθJA=100°C/W
8
7
12
10
Power (W)
ID, Drain Current (A)
10
VDS=10V
14
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
8
6
6
5
4
4
3
2
2
1
0
0
0
1
5
2
3
4
VGS , Gate-Source Voltage(V)
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.1
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB090N06N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB090N06N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB090N06N3
CYStek Product Specification
Spec. No. : C420N3
Issued Date : 2014.01.24
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
TE
BHNS
XX
Date Code
Device Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032
0.0079
0.0118
0.0266
0.0335
0.0453
0.0830
0.1161
0.0098
0.0256
0.0118
0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB090N06N3
CYStek Product Specification