BTN8050A3

Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 1/5
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTN8050A3
Description
The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
• High collector current , IC = 1.5A
• Low VCE(sat)
• Complementary to BTP8550A3.
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTN8050A3
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
BTN8050A3
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
Tj
Tstg
Limits
40
25
6
1.5
0.5
625
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
40
25
6
120
160
80
100
-
Typ.
6
Max.
100
100
0.5
1.2
1
500
20
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=2mA
IE=100μA
VCB=35V
VEB=6V
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
VCE=1V, IC=5mA
VCE=1V, IC=100mA
VCE=1V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
D
160~320
E
250~500
Ordering Information
Device
HFE rank
BTN8050A3-D-BK-G
D
BTN8050A3-E-BK-G
E
BTN8050A3-D-TB-G
D
BTN8050A3-E-TB-G
E
BTN8050A3
Package
Shipping
TO-92
1000 pcs / bag,
(Pb-free lead plating and halogen-free package)
10 bags/box
TO-92
1000 pcs / bag,
(Pb-free lead plating and halogen-free package)
10 bags/box
TO-92
2000 pcs / Tape &
(Pb-free lead plating and halogen-free package)
Box
TO-92
2000 pcs / Tape &
(Pb-free lead plating and halogen-free package)
Box
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 3/5
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.35
1.4
1mA
Collector Current---IC(A)
Collector Current---IC(A)
5mA
1.2
0.3
0.25
0.2
500uA
400uA
300uA
0.15
0.1
200uA
0.05
1
0.8
2.5mA
2mA
0.6
1.5mA
0.4
0.2
IB=100uA
0
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
1000
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
100
Current Gain---HFE
1000
Current Gain---HFE
6
Current Gain vs Collector Current
Current Gain vs Collector Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
VCE=2V
VCE=1V
10
10
1
10
100
1000
Collector Current---IC(mA)
1
10000
Current Gain vs Collector Current
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
1000
VCESAT@IC=20IB
Saturation Voltage---(mV)
1000
Current Gain---HFE
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCE=5V
10
10
1
BTN8050A3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 4/5
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
VCESAT@IC=100IB
100
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT@IC=50IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
10
10000
10000
On Voltage---(mV)
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
10
100
1000
Collector Current---IC(mA)
1000
100
100
1
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
VBEON@VCE=1V
VBESAT@IC=50IB
Saturation Voltage---(mV)
10000
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
1
10000
10
100
1000
Collector Current---IC(mA)
10000
Cutoff Frequency vs Collector Current
Capacitance vs Reverse-biased Voltage
1000
100
Cutoff Frequency---fT(MHz)
Cib
Capacitance---(pF)
100
1000
Collector Current---IC(mA)
10
Cob
VCE=10V
100
10
1
0.1
BTN8050A3
1
10
Reverse-biased Voltage---VR(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 5/5
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(mW)
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTN8050A3
CYStek Product Specification
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 6/5
CYStech Electronics Corp.
TO-92 Taping Outline
H2
H2A H2A
H2
D2
A
L
H3
H4 H
L1
H1
D1
F1F2
T2
T
T1
DIM
A
D
D1
D2
F1,F2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
-
BTN8050A3
P1
P
Item
Component body height
Tape Feed Diameter
Lead Diameter
Component Body Diameter
Component Lead Pitch
F1-F2
Height Of Seating Plane
Feed Hole Location
Front To Rear Deflection
Deflection Left Or Right
Component Height
Feed Hole To Bottom Of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Center Of Seating Plane Location
4 Feed Hole Pitch
Over All Tape Thickness
Total Taped Package Thickness
Carrier Tape Thickness
Tape Width
Adhesive Tape Width
20 pcs Pitch
W1
W
D
P2
Millimeters
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
253
Max.
4.83
4.20
0.53
4.83
2.90
±0.3
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 7/5
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN8050A3
CYStek Product Specification
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date : 2013.05.21
Page No. : 8/5
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
8050
□
□□□□
α3
C
HFE Rank
Date Code
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN8050A3
CYStek Product Specification