BTN6718D3

CYStech Electronics Corp.
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date : 2015.07.14
Page No. : 1/5
General Purpose NPN Epitaxial Planar Transistor
BTN6718D3
Features
• High breakdown voltage, BVCEO≥ 100V
• Large continuous collector current capability, IC(MAX)=1A(DC)
• Low collector saturation voltage
• Pb-free lead plating package
Symbol
Outline
BTN6718D3
TO-126ML
B:Base
C:Collector
E:Emitter
E C B
Ordering Information
Device
BTN6718D3-X-BL-S
Package
TO-126ML
(Pb-free lead plating package)
Shipping
200 pcs / bag, 15 bags/box
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, BL : 200 pcs/bag, 15 bags/box
Product rank, zero for no rank products
Product name
BTN6718D3
CYStek Product Specification
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date : 2015.07.14
Page No. : 2/5
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Power Dissipation(TA=25℃)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Power Dissipation(TC=25℃)
Junction Temperature
Storage Temperature
Tj
Tstg
Limits
180
100
5
1
2 (Note )
0.2
Unit
V
V
V
A
A
A
1.6
W
10
W
150
-55~+150
°C
°C
Note : Single pulse, Pw≤300μs, Duty Cycle≤2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
100
5
90
100
20
50
-
Typ.
-
Max.
100
100
200
300
20
Unit
V
V
V
nA
nA
mV
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V, IE=0
VEB=5V, IC=0
IC=350mA, IB=35mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTN6718D3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date : 2015.07.14
Page No. : 3/5
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
HFE
Saturation Voltage-(mV)
Current Gain---HFE
VCE=5V
100
VCE=2V
IC=20IB
100
VCE=1V
IC=10IB
10
10
1
10
100
1000
Collector Current ---IC(mA)
1
10000
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
10000
10000
[email protected]=10IB
[email protected]=5V
On Voltage-(mV)
Saturation Voltage-(mV)
10000
1000
1000
100
100
1
10
100
1000
10000
1
10
100
1000
Collector Current--- IC(mA)
Collector Current--- IC(mA)
Power Derating Curve
10000
Power Derating Curve
1.8
12
Power Dissipation---PD(W)
Power Dissipation---PD(W)
1.6
1.4
1.2
1
0.8
0.6
0.4
10
8
6
4
2
0.2
0
0
0
BTN6718D3
25
50
75 100 125 150
Ambient Temperature---TA(℃)
175
200
0
25
50
75 100 125 150
Case Temperature---TC(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date : 2015.07.14
Page No. : 4/5
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN6718D3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C319D3
Issued Date : 2008.05.13
Revised Date : 2015.07.14
Page No. : 5/5
TO-126ML Dimension
Marking:
Device
Name
N6718
□□
Date
Code
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
CYStek Package Code: D3
*: Typical
DIM
Min.
0.118
0.071
0.026
0.046
0.018
0.307
0.425
A
A1
b
b1
c
D
E
Inches
Max.
0.134
0.087
0.034
0.054
0.024
0.323
0.441
Millimeters
Min.
Max.
3.000
3.400
1.800
2.200
0.660
0.860
1.170
1.370
0.450
0.600
7.800
8.200
10.800
11.200
DIM
e
e1
L
L1
P
Φ1
Φ2
Inches
Min.
Max.
*0.090
0.176
0.594
0.051
0.159
0.118
0.122
0.183
0.610
0.059
0.167
0.126
0.130
Millimeters
Min.
Max.
*2.28
4.460
4.660
15.100
15.500
1.300
1.500
4.040
4.240
3.000
3.200
3.100
3.300
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN6718D3
CYStek Product Specification