Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 1/9 CYStech Electronics Corp. P-CHANNEL Enhancement Mode MOSFET MTP3401N3 BVDSS ID RDS(ON)@VGS=-10V, ID=-4.2A RDS(ON)@VGS=-4.5V, ID=-4A RDS(ON)@VGS=-2.5V, ID=-1A -30V -4.2A 48mΩ(typ) 56mΩ(typ) 67mΩ(typ) Features • Advanced trench process technology • High density cell design for ultra low on resistance • Low gate charge • Compact and low profile SOT-23 package • Pb-free & Halogen-free package Equivalent Circuit Outline MTP3401N3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTP3401N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C (Note 1) Continuous Drain Current @TA=70°C (Note 1) Pulsed Drain Current (Note 2) Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Symbol Limits Unit VDS VGS ID ID IDM PD -30 ±12 -4.2 -3.5 -30 1.38 0.01 -55~+150 V V A A A W W/°C °C Tj, Tstg Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd MTP3401N3 Min. Typ. Max. Unit -30 -0.6 - 48 56 67 11 -1.3 ±100 -1 -5 60 65 120 - V V nA µA µA - 1100 54 60 6.3 3.2 38.2 12 9.4 2 3 - Test Conditions S VGS=0, ID=-250µA VDS=VGS, ID=-250µA VGS=±12V, VDS=0 VDS=-24V, VGS=0 VDS=-24V, VGS=0, Tj=55°C ID=-4.2A, VGS=-10V ID=-4.0A, VGS=-4.5V ID=-1.0A, VGS=-2.5V VDS=-5V, ID=-5A pF VDS=-15V, VGS=0, f=1MHz ns VDS=-15V, VGS=-10V, RL=3.6Ω, RG=6Ω nC VDS=-15V, ID=-4A, VGS=-4.5V, mΩ CYStek Product Specification CYStech Electronics Corp. Rg Source-Drain Diode *ISD *VSD *trr *Qrr - 6 - Ω f=1.0MHz -0.76 20.2 11.2 -2.2 -1.0 - A V ns nC VD=VG=0, VS=-1.0V VGS=0V, ISD=-1.0A Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 3/9 IS=-4A, VGS=0V, dI/dt=100A/µs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Recommended Soldering Footprint MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 10V 4.5V -ID, Drain Current (A) 20 -VGS=3V 15 -VGS=2.5V 10 5 40 -BVDSS, Drain-Source Breakdown Voltage (V) 25 -VGS=1.8V 38 36 34 32 ID=-250μA, VGS=0V 30 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 -VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) 1000 -VGS=4.5V -VGS=1.8V 100 -VGS=10V -VGS=2.5V 10 0.001 VGS=0V 1 Tj=150°C 0.6 0.4 0.2 0.01 0.1 -ID, Drain Current(A) 1 0 10 2 4 6 8 -IDR, Reverse Drain Current (A) 10 Drain-Source On-State Resistance vs Junction Tempearture 200 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 120 180 160 140 120 100 ID=-4.2A ID=-1A 80 60 40 20 VGS=-4.5V, ID=-4A 100 VGS=-2.5V, ID=-1A 80 60 40 VGS=-10V, ID=-4.2A 20 0 0 MTP3401N3 Tj=25°C 0.8 Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1 -VGS(th) ,Threshold Voltage-(V) Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss ID=-250μA 0.8 0.6 0.4 0.2 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 60 80 100 120 140 160 Maximum Drain Current vs JunctionTemperature 100 5 10μs 100μs 10 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 20 40 Tj, Junction Temperature(°C) Maximum Safe Operating Area 1ms 10ms 1 100ms 0.1 DC 0.01 4.5 4 3.5 3 2.5 2 1.5 1 TA=25°C, VGS=-10V 0.5 0 0.01 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 Single Pulse Power Rating, Junction to Ambient (Note 1 on page 1) -VGS, Gate-Source Voltage(V) 30 20 10 0 0.001 MTP3401N3 75 100 125 150 Tj, Junction Temperature(°C) 175 Gate Charge Characteristics TJ(MAX) =150°C TA=25°C 40 50 12 50 Power (W) 0 10 8 VDS=-15V ID=-4A 6 4 2 0 0.01 0.1 1 Pulse Width(s) 10 100 0 4 8 12 16 Qg, Total Gate Charge(nC) 20 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve 1.6 PD, Power Dissipation(W) 1.4 Mounted on FR-4 board with 1 in² pad area 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 Transient Thermal Response Curves Normalized Transient Thermal Resistance 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=90 °C/W 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP3401N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2014.05.20 Page No. : 9/9 SOT-23 Dimension Marking: TE 3401 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP3401N3 CYStek Product Specification